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VP1008L Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
VP1008L	Siliconix	P-Channel Enhancement-Mode MOSFET Transistors	Original	PDF
VP1008L	Vishay	P-Channel Enhancement-Mode MOSFET Transistors	Original	PDF
VP1008L	Vishay Intertechnology	P-Channel 80-V (D-S) MOSFET	Original	PDF
VP1008L	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
VP1008L	Unknown	FET Data Book	Scan	PDF
VP1008L	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
VP1008L	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF
VP1008L	Topaz Semiconductor	-100 V, 5 ?, P-channel enhancement-mode D-MOS power FET	Scan	PDF
VP1008L	Vishay Siliconix	Shortform Siliconix Datasheet	Short Form	PDF

VP1008L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VP0808L Abstract: VP1008L Text: VP0808L, VP1008L Vishay Siliconix P-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5	Original	VP0808L, VP1008L VP0808L O-226AA) S-00530--Rev. 03-Apr-00 VP0808L VP1008L	PDF
VP0808L Abstract: VP1008L Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28	Original	VP0808L, VP1008L VP0808L 18-Jul-08 VP0808L VP1008L	PDF
VP0808L Abstract: VP1008L Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28	Original	VP0808L, VP1008L VP0808L 08-Apr-05 VP0808L VP1008L	PDF
VP0808B Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M Text: VP0808B/L/M, VP1008B/L/M Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M -80 -100 1 rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = -10 V 5 @ VGS = -10 V 5 @ VGS = -10 V	Original	VP0808B/L/M, VP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M O226AA) 37655--Rev. VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M	PDF
siliconix marking code Abstract: VP0808L VP1008L Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0808L –80 5 @ VGS = –10 V –2 to –4.5 –0.28 VP1008L –100 5 @ VGS = –10 V –2 to –4.5 –0.28	Original	VP0808L, VP1008L VP0808L O-226AA) S-04279--Rev. 16-Jul-01 siliconix marking code VP0808L VP1008L	PDF
VP8080 Abstract: VP1008 VP0808 VP0808B VP0808L VP1008B VP1008L Text: VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package TO-39 TO-92 -80V 5Ω -1.1A VP0808B VP0808L -100V 5Ω -1.1A VP1008B VP1008L Advanced DMOS Technology High Reliability Devices	Original	VP0808 VP1008 VP0808B VP0808L -100V VP1008B VP1008L VP8080 VP1008 VP0808 VP0808B VP0808L VP1008B VP1008L	PDF
VP0808B Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V	Original	VP0808B/L/M, VP1008B/L/M VP0808M VP1008B VP0808B VP0808L VP1008L VP1008M O-226AA) P-37655--Rev. VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M	PDF
TCA780 Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP	Original	1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP TCA780 TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G	PDF
mosfet cross reference Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is	Original	T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode	PDF
Untitled Abstract: No abstract text available Text: Temic Siliconix_YP0808B/L/M, YP1008B/L/M P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number rDS on Max (Q) V(BR)DSS Min (V) VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M 5 @ V GS= 5 @ V GS= 5 @ V Gs = 5 @ V Gs = 5 @ V Gs = 5 @ V Gs =	OCR Scan	YP0808B/L/M, YP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M O-226AA) P-37655--	PDF
VP0808B Abstract: VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P Text: VPMH10 Part Numbers: VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B Leakage Currente Ohmic Region Vos— d r a in Tc—CASE TEMPERATURE °C SO U R C E VOLTAGE (VOLTS) ON Resistance Characteristics O Z I -60 -2 0 20 60 100 140 180	OCR Scan	VPMH10 300us, VP1008L, VP0808L, VP1008M, VP0808M, VQ2006P, VQ2006J, VP1008B, VP0808B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2006J VQ2006P	PDF
Untitled Abstract: No abstract text available Text: _ VP0808 VP1008 _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^ D S O N I d (O N) BVdgs (max) (min) TO-39 TO-92 -80V 5Q -1.1A VP0808B VP0808L -100V 5Q -1.1A VP1008B VP1008L Advanced DMOS Technology	OCR Scan	VP0808 VP1008 VP0808B VP1008B -100V VP0808L VP1008L VP1008 VP0808	PDF
VP8080 Abstract: No abstract text available Text: V P 0808 in c . VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices Order Number / Package b v dss/ ^DS ON ' d(ON) b v dos (max) (min) TO-39 TO-92 -80V 5£i -1.1A VP0808B VP0808L -100V 5£i -1.1A VP1008B VP1008L	OCR Scan	VP1008 VP0808B VP1008B VP0808L VP1008L -100V VP1008 VP0808 VP8080	PDF
VP1008 Abstract: No abstract text available Text: Super te x inc. VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / B V cos Order Number / Package R d S ON *D<ON) (max) (min) TO-39 TO-92 VP0808L VP1008L -80V 5Ü -1.1A VP0808B -100V 5U -1.1A VP1008B Advanced DMOS Technology	OCR Scan	VP0808 VP1008 VP0808L VP1008L VP0808B -100V VP1008B 300tis 000437D VP1008	PDF

Untitled Abstract: No abstract text available Text: VP0808L, VP1008L Vishay Siliconix P-Channel 80- and 100-V D-S MOSFETs PRODUCT SUMMARY Part Number V {B R )D S S (V ) rD S (on) Max (Q) I d (A) V GS ( t h ) ( V ) VP0808L -8 0 5 @ V Gs = - 1 0 V - 2 t o -4 .5 -0 .2 8 VP1Q08L -1 0 0 5 @ V qs = - 1 0 V - 2 to -4 .5	OCR Scan	VP0808L, VP1008L VP0808L VP1Q08L S-04279-- 16-Jui-01 O-226AA)	PDF
Untitled Abstract: No abstract text available Text: V P 0 80 8 Supertex inc. ^ VP1008 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices B ^dss ^ Order Number / Package ^DS ON ^O(ON) b v dgs (max) (min) TO-39 TO-92 -80V 5i2 -1.1 A VP0808B VP0808L -100V 5 fi -1.1A	OCR Scan	VP1008 VP0808B VP1008B VP0808L VP1008L -100V VP1008 VP0808 300ms	PDF
Untitled Abstract: No abstract text available Text: VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary P a rt N u m b er V BR DSS M in (V) rDS(on) M ax (Q) V c sw o tV ) 5 @ VGS- - 1 0 V -2 to -4.5 -0.88 5 @ VGs - -10 V -2 to -4.5 -0.28 VP0808M 5 @ V os - -10 V -2 to -4.5	OCR Scan	VP0808B/L/M, VP1008B/L/M VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M Appli-12 P-37655--	PDF
JR 3610 Abstract: RT 083 206af 44464 Text: TELEDYNE COMPONENTS - 2ÖE D Mi ÛTiTtOE 000 ^40^ b • ■ -T-29-25 — cfTlHJlß2l0\7zi V P 0 8 0 8 , V P 1 00 8 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION Sorted CWp* tn Wsffla Pack TO-226AA (TO-82 Plastic Package	OCR Scan	----------------T-29-25 O-226AA O-237 808CHP VP08Q8L VP1008CHP VP1008L VP1008M -100\i VP1008 JR 3610 RT 083 206af 44464	PDF
vp0300m Abstract: VP0300B VP0808B VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B VP0808B VP0300B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln vp0300m VP0300B VP0808L VQ2001P VQ2004P	PDF
2sk to-92 Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) typ V g s (0) (V) typ (A)	OCR Scan	VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A	PDF
VP0808B Abstract: VP0300B VP0300M VP0808L VP0808M VP1008B VP1008L VP1008M VQ2001P VQ2004P Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 5.0 5.0 -90 -60 -30 5.0 5.0 2.0 -8 0	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VP0300B VP0300M VP0808L VQ2001P VQ2004P	PDF
BSR78 Abstract: VP0300M VP0808L 041 itt diode VP0300B VP0808B VP0808M VP1008B VP1008L VP1008M Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) rDS(on) (Ohms) >D Continuous (Amps) •100 -8 0 -3 0 5.0 5.0 2.5 0.9 0.9 100 -8 0 -3 0 5.0 5.0 2.5 -1 0 0 -8 0 Powor Dissipation (Watts) Part Number 6.25 6.25 6.25 VP1008B	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln BSR78 VP0300M VP0808L 041 itt diode VP0300B	PDF
VPDS06 Abstract: No abstract text available Text: VPDS06 CT*Siliconix incorporated TYPICAL CHARACTERISTICS T ransconductance C pF I d ÌA) V DS (V) On-Resistance vs. Junction Temperature 's (A) V SD (V) Revised (02/11/91) -0 .3 -0 .6 -0 .9 -1 .2 V GS (V) -1 .5 -1 .8 -2.1 6-203 ffX 'Sificonix VPDS06 in c o r p o r a te d	OCR Scan	VPDS06 6-204VP1008B) VPDV10 VPDS06	PDF
VP0808M Abstract: VQ2006P VP0300B VP0300M VP0808B VP0808L VP1008B VP1008L VP1008M VQ2001P Text: MOSPOWER Selector Guide Continued P-Channel MOSPOWER Device Breakdown Voltage (Volts) •100 -8 0 -3 0 rDS(on) (Ohms) >D Continuous (Amps) 5.0 5.0 2.5 0.9 0.9 -8 0 -3 0 5.0 5.0 2.5 0.37 0.37 0.48 -1 0 0 -8 0 5.0 5.0 -9 0 -6 0 -3 0 -90 -60 -30 1.3 Powor Dissipation	OCR Scan	VP1008B VP0808B VP0300B O-237Ã VP1008M VP0808M VP0300M VP1008L VP0808L 14-Pln VQ2006P VP0300B VP0300M VP0808L VQ2001P	PDF

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VP1008L Datasheets (9)

VP1008L Datasheets Context Search

VP0808L

VP0808L

VP0808L

VP0808B

siliconix marking code

VP8080

VP0808B

TCA780

mosfet cross reference

Untitled

VP0808B

Untitled

VP8080

VP1008

Untitled

Untitled

Untitled

JR 3610

vp0300m

2sk to-92

VP0808B

BSR78

VPDS06

VP0808M