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Text: VSQ9119S3 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power250m Frequency Min. (Hz) Frequency Max. (Hz)44GÂ Efficiency Min.11 V(Oper.) Nom.(V) Oper. Voltage11 I(Oper.) Typ.(A) Oper. Current250m Semiconductor MaterialInP Package StyleScrew Mounting StyleT
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VSQ9119S3
Power250m
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Current250m
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Abstract: No abstract text available
Text: VSQ9119S3N34 Diodes Continuous-Wave Gunn Diode P o Min.(W) Output Power250m Frequency Min. (Hz)42G Frequency Max. (Hz)46G Efficiency Min.11 V(Oper.) Nom.(V) Oper. Voltage11 I(Oper.) Typ.(A) Oper. Current250m Semiconductor MaterialInP Package StyleScrew Mounting StyleT
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VSQ9119S3N34
Power250m
Voltage11
Current250m
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Abstract: No abstract text available
Text: LITTON IND/LITTON SOLID SbE D 5544200 ODDQMTb SÔD • LITT J Z - ([ ■ GUNN DIODES HIGH FREQUENCY 22 to 110 GHz FEATURES • • • • • • GaAs and InP Devices High Efficiency Low Package Parasitics High Reliability Low FM and AM Noise Good Power and Frequency Stability
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