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    Excelitas Technologies Corporation VTE1013H

    Ir Emitter, 940Nm, 4.78Mm, To-46, Though Hole; Viewing Angle:35°; Diode Case Style:To-46; Forward Current If(Av):100Ma; Forward Voltage Vf Max:1.9V; Rise Time:1Μs; Fall Time Tf:1Μs; Operating Temperature Min:-55°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTE1013H
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    Ozdisan Elektronik VTE1013H
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    VTE1013H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs Infrared Emitting Diodes VTE1013H TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher


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    VTE1013H VTE1013 PDF

    VTE1013H

    Abstract: VTE1013
    Text: GaAs Infrared Emitting Diodes VTE1013H TO-46 Flat Window Package — 940 nm PACKAGE DIMENSIONS inch mm CASE 24A TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" X .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher


    Original
    VTE1013H VTE1013 VTE1013H VTE1013 PDF