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    MSi CRP100X12VTE1217

    CREATOR P100X 12VTE-1217US
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    VTE121 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTE1211 EG&G HIGH POWER GaAs INFRARED EMITTING DIODES 920nm Scan PDF
    VTE1211W EG&G HIGH POWER GaAs INFRARED EMITTING DIODES 920nm Scan PDF
    VTE1212 EG&G HIGH POWER GaAs INFRARED EMITTING DIODES 920nm Scan PDF
    VTE1212 EG&G Vactec GaAs Infrared Emitting Diodes Scan PDF
    VTE1212W EG&G HIGH POWER GaAs INFRARED EMITTING DIODES 920nm Scan PDF
    VTE1212W EG&G Vactec GaAs Infrared Emitting Diodes Scan PDF
    VTE1213 EG&G HIGH POWER GaAs INFRARED EMITTING DIODES 920nm Scan PDF
    VTE1213 EG&G Vactec GaAs Infrared Emitting Diodes Scan PDF
    VTE1213W EG&G HIGH POWER GaAs INFRARED EMITTING DIODES 920nm Scan PDF
    VTE1213W EG&G Vactec GaAs Infrared Emitting Diodes Scan PDF

    VTE121 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 5bE S • 3030bm QQG12 Qb 352 GaAs Infrared Emitting Diodes VTE121 2, 1213 T-1 3/4 Plastic Package — 940 nm E «VCT G & G VACTEC PACKAGE DIMENSIONS inch mm 1 .0 0 ( 2 5 .4 ) .2 2 0 (5 .5 9 ) .3 4 ( 8 .6 ) .0 5 0 ( I . 2 7 ) 'I .0 3 0 ( 0 .7 6 ) " -17 - - ^ 6 - NOM.


    OCR Scan     		3030bm QQG12 VTE121 VTE1212 VTE1213 PDF

    VTE1212

    Abstract: VTE1213
    Text: m 3030^01 000120b SfaE S GaAs Infrared Emitting Diodes 3 SE « V C T VTE1212, 1213 T-1 3/4 Plastic Package — 940 nm E G & G VACTEC ' - M l - PACKAGE DIMENSIONS inch mm 1 .0 0 ( 2 5 . 4 ) .2 4 0 ( 6 . 1 0 ) .2 2 0 ( 5 . 5 9 ) (8 .6) •050 ( t . 2 7 ) .3 4


    OCR Scan     		000120b VTE1212, VTE1212 VTE1213 PDF

    Untitled

    Abstract: No abstract text available
    Text: SbE D BGaDbDT □□□1507 GaAs Infrared Emitting Diodes T-1 3/4 Plastic Package — 940 nm 5=n • VCT VTE1212W , 1213W E 6 & 6 VACTEC P A C K A G E D IM EN SIO N S inch mm t.o o .2 2 0 ( 5 .5 9 ) ( 1 .5 2 ) 1 f o + (2 .54 ) II Plastic contour not controlled In region


    OCR Scan     		VTE1212W VTE1213W PDF

    VTE1212W

    Abstract: VTE1213W
    Text: SbE D 3 D 3 D tiD ti 0001207 GaAs Infrared Emitting Diodes VTE1212W , 1213W T-1 3/4 Plastic Package — 940 nm E G & G iVCT -HI-I l VACTEC PACKAGE DIMENSIONS inch mm 1 .0 0 7ACI (fi I n ï ( 2 5 .4 ) D Plastic contour not controlled In region o>fthe leads.


    OCR Scan     		VTE1212W, VTE1212W VTE1213W PDF

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12 PDF

    nE352

    Abstract: VTE3121L T01B ME 1117 T018 VTE1012 VTE1112 VTE1211 VTE1211W VTE3121
    Text: This Material L E D -1 B Copyrighted n ¿ '^ E G z tS HIGH POWER GaAs INFRARED EMITTING DIODES V A C T E C OPTOELECTRONICS 920 nm 10900 PAGE BLVD. ST. LOUIS. MO. 63132 USA TWX 910-764-0811 PHONE 314-423-4900 By P R O D U C T D ESCRIPTION: Its FE A T U R E S:


    OCR Scan     		10pps. nE352 VTE3121L T01B ME 1117 T018 VTE1012 VTE1112 VTE1211 VTE1211W VTE3121 PDF

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


    OCR Scan     		1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B PDF

    Untitled

    Abstract: No abstract text available
    Text: LED-1 B HIGH POWER GaAs INFRARED EMITTING DIODES 920 nm il OPTOELECTRONICS 1 0 900 PAGE BLVD. ST. LOUIS, M O . 63132 USA PHONE 3 1 4 -4 2 3 -4 9 0 0 TW X 910-764-0811 FEATURES: PRODUCT DESCRIPTION: • Eight standard packages in This series of Infrared emitting diodes {IREDs consists of


    OCR Scan     		10pps. PDF