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VENKEL LTD MELFC0207-XN-1872BT MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Venkel Ltd.	MELFC0207-XN-1872BT	Reel		6 Weeks, 3 Days	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
VENKEL LTD MELFC0207-XN-1872CT MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.25%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Venkel Ltd.	MELFC0207-XN-1872CT	Reel		6 Weeks, 3 Days	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
VENKEL LTD MELFC0207-XN-1872DT MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�0.5%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Venkel Ltd.	MELFC0207-XN-1872DT	Reel		6 Weeks, 3 Days	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
VENKEL LTD MELFC0207-XN-1872FT MELF Coated Thin Film CR;0207;1W;�10PPM;18.7K;�1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Venkel Ltd.	MELFC0207-XN-1872FT	Reel		6 Weeks, 3 Days	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

XN1872 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
XN1872		Panasonic	Silicon n-channel enhancement MOSFET		Original	PDF
XN1872		Panasonic	Silicon N-channel, Enhancement MOS FET		Original	PDF
XN1872		Panasonic	N-Channel Enhancement MOS FET Composite Transistors		Original	PDF
XN1872		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF

XN1872 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2SK621 Abstract: XN01872 XN1872 FET23 Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10	Original	PDF	2002/95/EC) XN01872 XN1872) 2SK621 XN01872 XN1872 FET23
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)	Original	PDF	2002/95/EC) XN01872 XN1872) 2SK0621 2SK621)
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs)	Original	PDF	2002/95/EC) XN01872 XN1872) 2SK0621 2SK621)
Untitled Abstract: No abstract text available Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Two elements incorporated into one package (Source-coupled FETs)	Original	PDF	2002/95/EC) XN01872 XN1872)
2SK621 Abstract: XN01872 XN1872 JIS C 1102 Text: Composite Transistors XN01872 XN1872 Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 • Two elements incorporated into one package (Source-coupled FETs) • Reduction of the mounting area and assembly cost by one half	Original	PDF	XN01872 XN1872) 2SK621 XN01872 XN1872 JIS C 1102
2SK621 Abstract: XN01872 XN1872 Text: Composite Transistors XN01872 XN1872 Silicon N-channel • Enhancement MOS FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) ● Two elements incorporated into one package. (Source-coupled FETs) Reduction of the mounting area and assembly cost by one half.	Original	PDF	XN01872 XN1872) 2SK0621 2SK621) 2SK621 XN01872 XN1872
2SK621 Abstract: XN1872 XN01872 Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN01872 (XN1872) Silicon n-channel enhancement MOSFET Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 5 1 0.30+0.10	Original	PDF	2002/95/EC) XN01872 XN1872) 2SK621 XN1872 XN01872
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Untitled Abstract: No abstract text available Text: Transistors Selection Guide by Applications and Functions • FET 5 Pin Mini Type (D12) n n n . .n U U Li u u u Neh 2 elements Nch 2 elements Hrrmr1 Application Low noise amp. switching Main Characteristics Vds * Vdsx (V) XN1872 n (V) 0.1 1.5 —3.5 Id	OCR Scan	PDF	XN1872 XN1D874/XP1D874 2SK198 2SK621 XN1D873/XP1D873 NPNf2SD132R^ SO-10C SO-14CD79) SO-14
5pin marking VJ Abstract: marking AE 5pin AX05 N2211 9p marking 2SD601 Z 211H Text: ^ S 5 S S í / ^ yT — V Mini Type (5-pin) Package FET Transistors, FETs U n it : mm »•»fri i s-8:8t 0.6510.15 5 - M ( 5 îS i) /N " ^ - v ■>'■Ÿ < "J T - X 7 ( i , S£#<D$ - m m v t m -E E } v n -S 3 - 4 b 7 > > * 2 4' a (7>a^-ib ft Jfc L t i l	OCR Scan	PDF	UN2215 2SD601 2SC3130 2SB709A 2SD601A UN2112 UN2212 5pin marking VJ marking AE 5pin AX05 N2211 9p marking Z 211H