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    A 103 TRANSISTOR Search Results

    A 103 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    A 103 TRANSISTOR Price and Stock

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANTXV2N6338
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    Onlinecomponents.com JANTX2N3507L
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    Microchip Technology Inc JANS2N3019

    Trans GP BJT NPN 80V 1A 800mW 3-Pin TO-5AA Tray
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com JANS2N3019
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    Onlinecomponents.com JANTXV2N2906A
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    Onlinecomponents.com JAN2N3501L
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    A 103 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Q67040-S4009-A2

    Abstract: SPP31N05
    Text: BUZ 103 S Preliminary data SPP31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 S 55 V 31 A 0.04 Ω


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    SPP31N05 O-220 Q67040-S4009-A2 04/Nov/1997 Q67040-S4009-A2 SPP31N05 PDF

    marking 15430

    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high


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    PDF

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    Abstract: No abstract text available
    Text: Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high


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    CDMA2000-1X

    Abstract: RAYTHEON RMPA1956-103
    Text: RMPA1956-103 - 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module RF Components PRODUCT INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands.


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    RMPA1956-103 CDMA2000-1X RAYTHEON PDF

    RAYTHEON

    Abstract: RMPA2053-103
    Text: RMPA2053-103 3V WCDMA Power Amplifier Module with Analog Bias Control ADVANCED INFORMATION Description Features The RMPA2053-103 is a power amplifier module PAM for 3GPP Wideband CDMA (WCDMA) applications. The PAM has been specifically designed for low current draw at low power levels while maintaining high power


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    RMPA2053-103 RMPA2053-103 RAYTHEON PDF

    RAYTHEON

    Abstract: CDMA2000-1X RMPA1953-103 RAYTHEON INC, INTERFACE ACPR24
    Text: RMPA1953-103 3V PCS CDMA & CDMA2000 Power Amplifier Module with Digital Bias Control ADVANCED INFORMATION Description Features The RMPA1953-103 is a power amplifier for CDMA and CDMA2000-1X personal communications system PCS applications. The PA is internally matched to 50 ohms to minimize the use of external components. Advanced DC


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    RMPA1953-103 CDMA2000 RMPA1953-103 CDMA2000-1X RAYTHEON RAYTHEON INC, INTERFACE ACPR24 PDF

    A706 transistor

    Abstract: No abstract text available
    Text: 3 H Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100␣MHz The 103 Series is a single-stage high-gain silicon bipolar amplifler that incorporates thin-film technology. Low noise figure and high


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    100MHz 5963-2481E A706 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: RMPA1956-103 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module ADVANCED INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands. The PA is internally matched to 50


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    RMPA1956-103 CDMA2000-1X RMPA1956-103 PDF

    UPA101

    Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
    Text: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,


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    AN-SI-1001 UPA101/102/103/104 UPA104 UPA104 UPA104B UPA101 UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 RF TRANSISTOR NPN MICRO-X PDF

    Thermal considerations for SOT89

    Abstract: BD136 BD226 BDX35
    Text: Philips Semiconductors Thermal Impedance Curves General THERMAL IMPEDANCE CURVES Transistor thermal impedance curves for various packages and duty cycles are shown in Figures 1 to 23 inclusive. MGL193 103 handbook, full pagewidth Zth j-a δ=1 0.75 0.5 (K/W)


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    MGL193 MGG837 OT416 SC-75) MGL613 OT490 SC-89) Thermal considerations for SOT89 BD136 BD226 BDX35 PDF

    CHDTC115GKGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKGP SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)


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    CHDTC115GKGP 300uS; 100MHz CHDTC115GKGP PDF

    GKD transistor

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC115GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE MARKING GKD Emitter .103 2.64 .086 (2.20)


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    CHDTC115GKPT tp300uS; 100MHz GKD transistor PDF

    ICL7611

    Abstract: MAX872
    Text: POWER-SUPPLY CIRCUITS Application Note 103: Jul 09, 1998 P-FET Linear Regulator Has Low Dropout Voltage P-channel MOSFETs P-FETs , though more expensive than pnp transistors, are free of the dissipation loss associated with base drive in a pnp circuit. P-FETs also have a lower saturation


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    100mV. 100kW) 500mA ICL7611: MAX872: com/an103 ICL7611 MAX872 PDF

    CHDTA115GKGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA115GKGP SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)


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    CHDTA115GKGP -72uA -50uA 300uS; 100MHz CHDTA115GKGP PDF

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA114TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)


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    CHDTA114TKPT tp300uS; 100MHz 100OC -40OC -100u -100m -500m -200m PDF

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTC124GKPT SURFACE MOUNT NPN Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)


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    CHDTC124GKPT 330uA tp300uS; 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA115TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)


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    CHDTA115TKPT -50uA tp300uS; 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTB143TKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 500 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE B 2 2 .103 (2.64) .086 (2.20) .028 (0.70)


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    CHDTB143TKPT tp300uS; 100MHz 100OC -40OC -500u -100m -500m PDF

    Untitled

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHDTA114GKPT SURFACE MOUNT PNP Digital Silicon Transistor VOL TA GE 50 Vo l t s CURRENT 100 m A m p er e APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE Base 2 2 .103 (2.64) .086 (2.20) .028 (0.70)


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    CHDTA114GKPT -720uA -50uA -10mA; tp300uS; 100MHz PDF

    fr91a

    Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
    Text: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72


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    BFG96 BFP96 BFP505 BFP520 BFP540 BFQ33C BFQ63 BFQ65 BFQ66 BFQ161 fr91a philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72 PDF

    transistor 7016

    Abstract: hf 9907
    Text: What HEWLETT mLrJm P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifier


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Who IHEWLETT mUKM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 103 Series Features Description Pin Configuration • Frequency Range: 10 to 100 MHz The 103 Series is a single-stage high-gain silicon bipolar amplifier


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    MJE 340 transistor

    Abstract: SOT-103 74341 MSB037 BFR541 npn transistor high current
    Text: Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR541 FEATURES DESCRIPTION • High power gain • High transition frequency Silicon NPN planar epitaxial transistor in a plastic, 4-lead dual emitter SOT 103 package. • Gold metallization ensures


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    BFR541 OT103 MSB037 OT103. 711002b MJE 340 transistor SOT-103 74341 MSB037 BFR541 npn transistor high current PDF

    Untitled

    Abstract: No abstract text available
    Text: Pjjijip^enijconductor^^^ • bbS3T31 0031233 T1S ■ APX^ProductspecificatiOT NPN 6 GHz wideband transistor ^ BFG91A N AHER PHILIPS/DISCRETE DESCRIPTION b*lE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in


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    bbS3T31 BFG91A PDF