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    A00002 Search Results

    SF Impression Pixel

    A00002 Price and Stock

    Diodes Incorporated FKA000022Q

    XTAL OSC XO 100.0000MHZ CMOS SMD
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    DigiKey FKA000022Q Digi-Reel 1,093 1
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    FKA000022Q Cut Tape 1,093 1
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    Mouser Electronics FKA000022Q 1,345
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    Avnet Silica FKA000022Q 18 Weeks 3,000
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    Arduino A000024

    ETHERNET SHIELD 2 W5500 W/O POE
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    Diodes Incorporated PBA000027

    XTAL OSC XO 100.0000MHZ PECL
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    DigiKey PBA000027 Cut Tape 478 1
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    PBA000027 Digi-Reel 478 1
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    Bristol Electronics PBA000027 506 2
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    L-com Inc U2A00002-2M

    CABLE USB TYPE A/B 2MTR
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    DigiKey U2A00002-2M Bag 185 1
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    L-com Inc U2A00002-3M

    CABLE USB TYPE A/B 3MTR
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    DigiKey U2A00002-3M Bag 136 1
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    A00002 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    A000022 Arduino Development Boards, Kits, Programmers - Evaluation Boards - Embedded - MCU, DSP - BOARD LEONARDO ETH WITHOUT POE Original PDF
    A000023 Arduino Development Boards, Kits, Programmers - Evaluation Boards - Embedded - MCU, DSP - BOARD LEONARDO ETH WITH POE Original PDF
    A000024 Arduino Development Boards, Kits, Programmers - Evaluation Boards - Expansion Boards, Daughter Cards - ETHERNET SHIELD 2 W/O POE Original PDF
    A000025 Arduino Development Boards, Kits, Programmers - Evaluation Boards - Expansion Boards, Daughter Cards - ETHERNET SHIELD WITH POE MODULE Original PDF

    A00002 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25040B FM25040B MS-012 FM25040B, FM25040B-G A00002G1 RIC1051

    AEC-Q100-003

    Abstract: FM25W256
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256 256-kilobit MS-012 FM25W256, FM25W256-G A00002G1 RIC1039 AEC-Q100-003

    R5L16B

    Abstract: FM25L16B-GTR fm25l16b-g
    Text: FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25L16B FM25L16B FM25L16B, R5L16B FM25L16B-GTR fm25l16b-g

    invertor

    Abstract: 78p064 UPD780022 nec 78012F TMC01 uPD78014H PD780208 PD78044F uPD78044H 45008D
    Text: K0 Family 8-Bit Single-Chip Microcontrollers Programmer's Reference Manual µPD78014/14Y Subseries µPD78014H Subseries µPD78018F/18FY Subseries µPD780208 Subseries µPD780024/24Y Subseries µPD780034/34Y Subseries µPD78044F Subseries µPD78044H Subseries


    Original     		PDF PD78014/14Y PD78014H PD78018F/18FY PD780208 PD780024/24Y PD780034/34Y PD78044F PD78044H PD78054/54Y PD78058F/58FY invertor 78p064 UPD780022 nec 78012F TMC01 uPD78014H uPD78044H 45008D

    FM25W256-Gtr

    Abstract: No abstract text available
    Text: FM25W256 256Kb Wide Voltage SPI F-RAM Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25W256 256Kb FM25W256 256-kilobit FM25W256-Gtr

    R5L16B

    Abstract: AEC-Q100-002 FM25L16B FM25L16B-DG FM25L16B-G
    Text: Preliminary FM25L16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25L16B FM25L16B 16-kilobit FM25L16B, R5L16B R5L16B AEC-Q100-002 FM25L16B-DG FM25L16B-G

    fm24c04b

    Abstract: No abstract text available
    Text: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		PDF FM24C04B FM24C04B

    FM24CL04BG

    Abstract: No abstract text available
    Text: FM24CL04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1014 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		PDF FM24CL04B FM24CL04B FM24CL04BG

    AEC-Q100-002

    Abstract: FM25160
    Text: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160C MS-012 FM25C160C, FM25C160CG A00002G1 RIC1051 FM25C160C AEC-Q100-002 FM25160

    BIT3105

    Abstract: 4001 internal block diagram 0310H 80960 dsar3 a6403 2081 0000 02
    Text: 20 Application Accelerator Unit This chapter describes the integrated Application Accelerator Unit AAU . The operation modes, setup, external interface, and implementation of the AAU are detailed in this chapter. 20.1 Overview The AAU provides low-latency, high-throughput data transfer capability between the AAU and


    Original     		PDF 128-byte, 16-deep 128-byte BIT3105 4001 internal block diagram 0310H 80960 dsar3 a6403 2081 0000 02

    HTR resistors

    Abstract: 80960 80960SA reference i960 RP Processor 80960JF STT 433 1250H clock generator in dual core processor i960 Cx Instruction Set Quick Reference i960 Cx Processor Instruction Set Quick Reference
    Text: i960 RP Microprocessor User’s Manual i960® RP Microprocessor User’s Manual February 1996 Order Number: 272736-001 Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for


    Original     		PDF Index-17 Index-18 HTR resistors 80960 80960SA reference i960 RP Processor 80960JF STT 433 1250H clock generator in dual core processor i960 Cx Instruction Set Quick Reference i960 Cx Processor Instruction Set Quick Reference

    80960

    Abstract: BO 620 bbc timer stt 11 c17f i960 Cx Processor Instruction Set Quick Reference i960RP 80960JF 80960RD 80960RP MA11
    Text: i960 Rx I/O Microprocessor Developer’s Manual Release Date: April, 1997 Order Number: 272736-002 The i960® Rx I/O Processor may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Such errata are


    Original     		PDF sa-26 Index-23 80960 BO 620 bbc timer stt 11 c17f i960 Cx Processor Instruction Set Quick Reference i960RP 80960JF 80960RD 80960RP MA11

    Untitled

    Abstract: No abstract text available
    Text: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original     		PDF FM25L04B

    Untitled

    Abstract: No abstract text available
    Text: FM24C04B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1012 Read/Writes 38 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Fast Two-wire Serial Interface


    Original     		PDF FM24C04B FM24C04B

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 1 Trillion 1012 Read/Writes 38 year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Sophisticated Write Protection Scheme


    Original     		PDF FM25040B FM25040B

    FM24CL16BG

    Abstract: fm24cl16b-g AEC-Q100-002 FM24CL16 FM24CL16B
    Text: Preliminary FM24CL16B 16Kb Serial 3V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24CL16B FM24CL16B 16-kilobit FM24CL16B, R4L16B FM24CL16BG fm24cl16b-g AEC-Q100-002 FM24CL16

    FM25L64B

    Abstract: FM25CL64BG FM25CL64B-G r5l64B FM25CL64B rev 1.0 FM25CL64B-GTR AEC-Q100-002 FM25CL64B FM25CL64B Feb 2011 fm25l64
    Text: Preliminary FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25CL64B FM25CL64B 64-kilobit FM25L64B, R5L64B FM25L64B FM25CL64BG FM25CL64B-G r5l64B FM25CL64B rev 1.0 FM25CL64B-GTR AEC-Q100-002 FM25CL64B Feb 2011 fm25l64

    FM24CL64B

    Abstract: FM24CL64b-G R4L64B FM24CL64BG FM24CL64B-GTR FM24CL64B-DG AEC-Q100-002 FM24CL64
    Text: Preliminary FM24CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 1014 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24CL64B FM24CL64B 64-kilobit FM24CL64B, R4L64B FM24CL64b-G R4L64B FM24CL64BG FM24CL64B-GTR FM24CL64B-DG AEC-Q100-002 FM24CL64

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    FM25L04B

    Abstract: FM-25
    Text: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25L04B FM25L04B FM25L04B, R5L04B FM-25

    fm24c64b-gtr

    Abstract: FM24C64B
    Text: FM24C64B 64Kb Serial 5V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  38 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24C64B FM24C64B 64-kilobit MS-012 FM24C64B, FM24C64B-G A00002G1 RIC1047 fm24c64b-gtr

    fm24c04-c-g

    Abstract: No abstract text available
    Text: Preliminary FM24C04C 4Kb Serial 5V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 1012 Read/Writes  36 Year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM24C04C FM24C04C MS-012 FM24C04C, FM24C04C-G A00002G1 RIC1049 fm24c04-c-g

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FM25C160B 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 1 Trillion 1012 Read/Writes • 38 year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160B MS-012 FM25C160B, FM25C160BG A00002G1 RIC1051 FM25C160B

    TMP38

    Abstract: tmp34 tmp39 tmp53 tmp63 AN073 tmp64 A00014 TMP41 tmp45
    Text: Philips Semiconductors Application note Synplicity/Model Tech Design Flow for targeting Philips CPLDs INTRODUCTION Philips Semiconductor has developed a family of advanced 3-volt and 5-volt complex programmable logic devices CPLDs . The XPLA series, designated as the PZ5000 - (5-volt) and PZ3000 (3-volt) series devices, is footprint


    OCR Scan     		PDF PZ5000 PZ3000 PZ5128/PZ3128 U00001/B00001) PZ5032-6A44 TMP38 tmp34 tmp39 tmp53 tmp63 AN073 tmp64 A00014 TMP41 tmp45