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    M5Stack Technologo Co Ltd A011-B

    BTC STANDING BASE CORE W/SHT30
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    DigiKey A011-B Bulk 16 1
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    JRH Electronics 620HA011B21

    CONN BACKSHELL W/CLMP SZ21 M31
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    JRH Electronics 620HA011B19

    CONN BACKSHELL W/CLMP SZ19 M28
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    JRH Electronics 620HA011B15

    CONN BACKSHELL W/CLMP SZ15 M22
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    JRH Electronics 620HA011B13

    CONN BACKSHELL W/CLMP SZ13 M18
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    A011B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    A011-B M5Stack Technologo BTC STANDING BASE CORE W/SHT30 Original PDF
    A011-B M5Stack Technologo BTC STANDING BASE CORE W/SHT30 Original PDF

    A011B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25L04B 4-Kbit 512 x 8 Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes


    Original     		FM25L04B 121-year FM25L04B PDF

    FM25L04

    Abstract: FM25L04-GA Q100
    Text: AEC Q100 Grade 1 Compliant FM25L04 – Automotive Temp. 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04 FM25L04 FM25L04, FM25L04GA A60023G RIC0636 10MHz FM25L04-GA Q100 PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 38 Year Data Retention (@ +75ºC) NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI


    Original     		FM25L04B PDF

    FM25L04B

    Abstract: FM-25
    Text: FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  38 Year Data Retention (@ +75ºC)  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B FM25L04B FM25L04B, R5L04B FM-25 PDF

    FM25L04

    Abstract: FM25L04-G FM25L04-S LTER
    Text: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme


    Original     		FM25L04 SOI4/05 100KHz FM25L04B. FM25L04 FM25L04-G FM25L04-S LTER PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme


    Original     		FM25L04 FM25L04, 100KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 10 Trillion 1013 Read/Writes • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B MS-012 FM25L04B, L3502G1, FM25L04BGA AL3502G1 RIC1104 FM25L04B PDF

    Untitled

    Abstract: No abstract text available
    Text: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B FM25L04B MS-012 FM25L04B, L3502G1, FM25L04BGA AL3502G1 RIC1104 PDF

    AEC-Q100-002

    Abstract: FM25L04B
    Text: Preliminary FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B FM25L04B FM25L04B, R5L04B AEC-Q100-002 PDF

    Untitled

    Abstract: No abstract text available
    Text: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits  High Endurance 10 Trillion 1013 Read/Writes  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme


    Original     		FM25L04 FM25L04, 100KHz PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4-Kbit 512 x 8 Serial (SPI) Automotive F-RAM 4-Kbit (512 × 8) Serial (SPI) Automotive F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 13 ❐ High-endurance 10 trillion (10 ) read/writes


    Original     		FM25040B 121-year FM25040B PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		FM25040B 64-Kbit 151-year FM25040B PDF

    Untitled

    Abstract: No abstract text available
    Text: FM25040B 4-Kbit 512 x 8 Serial (SPI) F-RAM 64-Kbit (8 K × 8) Serial (SPI) F-RAM Features Functional Overview • 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (See the Data Retention and


    Original     		FM25040B 64-Kbit 151-year FM25040B PDF

    FM25L04-GTR

    Abstract: FM25L04 FM25L04-S FM25L04-G
    Text: FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process Write Protection Scheme


    Original     		FM25L04 100KHz FM25L04-GTR FM25L04 FM25L04-S FM25L04-G PDF

    FM25L04B-G

    Abstract: FM25L04B AEC-Q100-002
    Text: Preliminary FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B FM25L04B FM25L04B, R5L04B FM25L04B-G AEC-Q100-002 PDF

    25L04B-GA

    Abstract: No abstract text available
    Text: AEC Q100 Grade 1 Compliant FM25L04B – Automotive Temp. 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High Endurance 10 Trillion 1013 Read/Writes NoDelay Writes Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04B FM25L04B 25L04B-GA PDF

    FM25040

    Abstract: FM25160 FM25160-P FM25160-S MS-001 5C260
    Text: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High Endurance 10 Billion 1010 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25160 FM25160 16-kilobit MS-001 FM25040 FM25160-P FM25160-S 5C260 PDF

    Untitled

    Abstract: No abstract text available
    Text: AEC Q100 Grade 1 Compliant FM25L04 – Automotive Temp. 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04 FM25L04 10MHz FM25L04B-GA. PDF

    FM25L04

    Abstract: FM25L04-S FM25L04-G
    Text: Pre-Production FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04 FM25L04 MS-012 FM25L04, FM25L04-S A40003S RIC0516 FM25L04-S FM25L04-G PDF

    Untitled

    Abstract: No abstract text available
    Text: Pre-Production FM25L04 4Kb FRAM Serial 3V Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • Unlimited Read/Write Cycles • 45 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


    Original     		FM25L04 MS-012 FM25L04, FM25L04-S A40003S RIC0516 PDF

    4430B

    Abstract: 256x128x8
    Text: |Ordering number : EN4430B] CMOS LSI LC33832P, S, M, PL, SL, ML-70/80/10 No. 4430B 256 K 32768 words x 8 bits Pseudo-SRAM Overview Package Dimensions The LC33832 series is composed of pseudo static RAM that operates on a single S V power supply and is organized as 32768 words x 8 bits. By using memory


    OCR Scan     		EN4430B] 4430B LC33832P, ML-70/80/10 LC33832 LC33C33832P, 4430B 256x128x8 PDF

    HCF 40188

    Abstract: 40188 4018 8 pin 4018B BY804 HCF4018 HCF4018BF
    Text: s e s-THonsoN 07c d u b s / m u s I ïia ia a ? o n m ttt a • ï . '| - , r — IN T E G R A T E D ¡ r n " k K ' : h c c /h c f 4o i 3B C IR C U IT 7929225 I ■— S G S SEMICONDUCTOR CQRP 'T^YS^3-gil PRESETTABLE DIVIDE-BY-N COUNTER • • • • •


    OCR Scan     		OPERATION-10 4018B C-HCF40II8 4011B -HCF401IB HCC-HCF4011B HCF 40188 40188 4018 8 pin 4018B BY804 HCF4018 HCF4018BF PDF

    HA 1166

    Abstract: LC78866V SSOP30
    Text: Ordering number :EN-&4450 CMOS LSI NO. LC78866V 4450 S A \Y O 16-Bit A/D Converter Overview Package Dimensions The LC78866V is a 16-bit CMOS A/D converter with a built-in 4-channel input multiplexer. The LC78866V is optimal for use in low band digital sampling and uses a


    OCR Scan     		LC78866V 16-Bit LC78866V SSOP30) ADIK13 LC7BB66V HA 1166 SSOP30 PDF