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C&K KSA0A211-LFTR SWITCH TACTILE SPST-NO 0.05A 32V
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DigiKey	KSA0A211-LFTR	Bulk	22,154		1	1 $0.89 10 $0.723 100 $0.5859 1000 $0.47178 10000 $0.445	Buy Now
C&K KSA0A211-LFT SWITCH TACTILE SPST-NO 0.05A 32V
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DigiKey	KSA0A211-LFT	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
C&K KSA0A211 LFTR Ksa0A211 Lftr Rohs Compliant: Yes \|C&k Components KSA0A211 LFTR
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Newark	KSA0A211 LFTR	Bulk			9,750	1 - 10 - 100 - 1000 $0.959 10000 $0.959	Buy Now
C&K KSA0A211LFTR Tactile Switches SPST-NO, Off-Mom Tact, Thru-hole
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Mouser Electronics	KSA0A211LFTR					1 - 10 - 100 - 1000 - 10000 $0.445	Get Quote
Sager	KSA0A211LFTR				3,250	1 - 10 - 100 - 1000 - 10000 $0.5933	Buy Now
Nachi America UVN-1A-0A2-1.5-4-12 Pump, Hydraulic, Variable Volume Vane Uni - NSP, UVN Series \| Nachi America Hydraulics UVN-1A-0A2-1.5-4-12
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RS	UVN-1A-0A2-1.5-4-12	Bulk		16 Weeks	1	1 $2873.12 10 $2729.47 100 $2729.47 1000 $2729.47 10000 $2729.47	Get Quote

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A0A21 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
740-0007 Abstract: EN29GL064 6A000 Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and	Original	PDF	EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000
LH28F640BFHG-PBTL70A Abstract: No abstract text available Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,	Original	PDF	LH28F640BFHG-PBTL70A 64Mbit 4Mbitx16) LHF64FH9) FM045022A LHF64FH9 LH28F640BFHG-PBTL70A
M29W640DB Abstract: M29W640D M29W640DT A0-A21 6A000 Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns	Original	PDF	M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000
smartphone MOTHERBOARD CIRCUIT diagram Abstract: AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball Text: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code	Original	PDF	02-DT-0704-00 smartphone MOTHERBOARD CIRCUIT diagram AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball
80 pin simm flash Abstract: 80 pin simm flash 64mb Flash SIMM 80 64mb simm 72 pin flash WED7F324XDNSN Flash SIMM 72 intel strataflash j3 16mb simm module Text: White Electronic Designs, Corp. WED7F324XDNSN / WED7F2324XDNSN Datasheet ADVANCE 4M X 32 / 2 X 4M X 32; INTEL J3 based, Flash Module General Description Pin Configurations The EDI7F324XDNSN and EDI7F2324XDNSN are organized as one and two banks of 4M x 32 respectively. The modules are based on Intel's	Original	PDF	WED7F324XDNSN WED7F2324XDNSN EDI7F324XDNSN EDI7F2324XDNSN E28F320J3, 120-150ns 16Megabyte WED7F324XDNSN10C WED7F324XDNSN12C WED7F324XDNSN15C 80 pin simm flash 80 pin simm flash 64mb Flash SIMM 80 64mb simm 72 pin flash Flash SIMM 72 intel strataflash j3 16mb simm module
MX29LV640D Abstract: A0-A21 MX29LV640E Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX Text: MX29LV640D T/B MX29LV640D T/B DATASHEET The MX29LV640D T/B product family is not recommended for new designs. The MX29LV640E T/B family is the recommended replacement. Please refer to MX29LV640E T/B datasheet for full specifications and ordering information, or contact your local sales	Original	PDF	MX29LV640D MX29LV640E MX29LV640E PM1208 64M-BIT A0-A21 Q0-Q15 MX29LV640DT 0001111XXX MX29LV640DBTC-90G 1000010XXX
MX29LV640ebt Abstract: MX29LV640EB MX29LV640EBTI-70G 29LV640 MX29LV640E mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132 Text: MX29LV640E T/B 64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 8,388,608 x 8 / 4,194,304 x 16 switchable • Sector Structure - 8KB 4KW x 8 and 64KB(32KW) x 127 • Extra 128-word sector for security - Features factory locked and identifiable, and customer lockable	Original	PDF	MX29LV640E 64M-BIT 128-word MX29LV640ebt MX29LV640EB MX29LV640EBTI-70G 29LV640 mx29lv640etti MX29LV640ETTI-70G A0-A21 Q0-Q15 PM-132
MX29LV033 Abstract: No abstract text available Text: ADVANCED INFORMATION MX29LV033A 32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES • Low Power Consumption - Low active read current: 10mA typical at 5MHz - Low standby current: 200nA (typical) • Minimum 100,000 erase/program cycle • 10-year data retention	Original	PDF	MX29LV033A 32M-BIT 200nA 10-year PM1017 OCT/06/2003 MX29LV033
IS49NLS18320 Abstract: No abstract text available Text: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency)	Original	PDF	IS49NLS96400 IS49NLS18320 576Mb 533MHz 533MHz) IS49NLS18320-25BLI IS49NLS96400-33BI IS49NLS96400-33BLI IS49NLS18320-33BI IS49NLS18320-33BLI IS49NLS18320
Untitled Abstract: No abstract text available Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words	Original	PDF	M29DW640F TSOP48 24Mbit
Untitled Abstract: No abstract text available Text: M58CR064C, M58CR064D M58CR064P, M58CR064Q 64 Mbit 4Mb x 16, Dual Bank, Burst 1.8V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Package – VDD = 1.65V to 2V for Program, Erase and Read – VDDQ = 1.65V to 3.3V for I/O Buffers – VPP = 12V for fast Program (optional)	Original	PDF	M58CR064C, M58CR064D M58CR064P, M58CR064Q 54MHz 120ns TFBGA56
TSOP56 Abstract: 2N 5551 datasheet A0-A21 M58LW032D Text: M58LW032D 32 Mbit 4Mb x8, 2Mb x16, Uniform Block 3V Supply Flash Memory FEATURES SUMMARY • WIDE x8 or x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = VDDQ = 2.7 to 3.6V for Program, Erase and Read operations ■ ACCESS TIME	Original	PDF	M58LW032D 110ns 90ns/25ns, 110ns/25ns TSOP56 KWord/128KByte TSOP56 2N 5551 datasheet A0-A21 M58LW032D
Untitled Abstract: No abstract text available Text: LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S5-L90/S5H-L90 – 90 ns (5.0±0.25 V)/100 ns (5.0±0.5 V) LH28F320S5-L12/S5H-L12	Original	PDF	LH28F320S5-L/S5H-L LH28F320S5-L90/S5H-L90 LH28F320S5-L12/S5H-L12 SSOP056-P-0600) 85MAX. FBGA080/064-P-0818)
MX* 64M-Bit eprom Abstract: No abstract text available Text: MX26L6420 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 4,194,304 x 16 byte structure • Single Power Supply Operation - 3.0 to 3.6 volt for read, erase and program operations • Low VCC write inhibit is equal to or less than 2.5V	Original	PDF	MX26L6420 64M-BIT 90/100/120ns 140s/chip 150s/chip OutputPM0823 JUL/01/2003 JUL/16/2003 OCT/30/2003 MX* 64M-Bit eprom

29F032B Abstract: m29f032b Text: AMDZ1 Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation ■ — Minimizes system level power requirem ents ■ ■ M anufactured on 0.32 \im process technology	OCR Scan	PDF	Am29F032B 20-year 29F032B 29F032B m29f032b
AM29F032 Abstract: am29f032b-120 AM29F032B-90 Text: AM D il Am29F032B 32 Megabit 4 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology	OCR Scan	PDF	Am29F032B 20-year 40-pin 44-pin AM29F032 am29f032b-120 AM29F032B-90
29LV641 Abstract: 29LV640D Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards	OCR Scan	PDF	Am29LV640DU/Am29LV641 16-Bit) 48-pin 56-pin Am29LV640DU/Am 29LV641 TSR048-- 16-038-TS48 TSR048 29LV640D
29LV033C Abstract: No abstract text available Text: ADVANCE INFORMATION AMD£I Am29LV033C 32 Megabit 4 M x 8-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • Zero Power Operation ■ — Sophisticated power management circuits reduce	OCR Scan	PDF	Am29LV033C 63-ball 40-pin 29LV033C
ADSP-2181 Abstract: No abstract text available Text: ANALOG DEVICES DSP Microcomputer ADSP-2181 FEATURES PERFORMANCE 25 ns Instruction Cycle Time from 20 MHz Crystal @ 5.0 Volts 40 MIPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture Allows Dual Operand Fetches in	OCR Scan	PDF	ADSP-2181 ADSP-2100 ST-133 ADSP-2181KS-133 ADSP-218 IBS-133 ADSP-2181KST-160 128-Lead ADSP-2181
ADSP-2187L Abstract: No abstract text available Text: ANALOG DEVICES FEATURES PERFORMANCE 19 ns Instruction Cycle Tim e @ 3.3 V olts, 52 MIPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture A llow s Dual Operand Fetches in Every Instruction Cycle M ultifunction Instructions	OCR Scan	PDF	ADSP-2100 ADSP-2187LKST-160 ADSP-2187LBST-160 ADSP-2187LKST-210 ADSP-2187LBST-210 100-Lead ST-100 ADSP-2187L
CL 2181 ic Abstract: AT/CL 2181 ic CL 2181 Text: ANALOG DEVICES DSP Microcomputers ADSP-2181 /ADSP-2183 FEATURES PERFORMANCE 30 ns Instruction Cycle Time @ 5.0 Volts 33 MIPS Sustained Performance 34.7 ns Instruction Cycle Time @ 3.3 Volts Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture Allows Dual Operand Fetches in	OCR Scan	PDF	ADSP-2181 /ADSP-2183 ADSP-2100 ST-133 SP-2181K S-133 SP-2181BS-133 128-Lead CL 2181 ic AT/CL 2181 ic CL 2181
29lv641 Abstract: No abstract text available Text: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations	OCR Scan	PDF	Am29LV640DU/Am29LV641 16-Bit) 48-pin 56-pin Am29LV640DU/Am 29LV641
4023 Ci Abstract: No abstract text available Text: @ LG Semicon. Co. LTD. Description Pin Configuration 36 DIP The GM23C64001 high performance read only memory is organised as 8,388,606 x 8 bits and has an access time of 120ns. It needs no external control clock to assure simple operation, because of its	OCR Scan	PDF	GM23C64001 120ns. 40HB757 A0-A21 402fl7S? 4023 Ci
TS68008CP8 Abstract: 24182 ef9367 EF6850 SN74LS73 SG 6CA SH 05.22 48-PIN A0-A21 TS68000 Text: ^ S C S -T H O M S O N D g l( e m i( g T [ R M O ( g S T S 6 8 0 0 8 8/16-B IT MICROPROCESSOR WITH 8-B IT DATA BUS • ■ ■ ■ ■ ■ ■ 17 32-BIT DATA AND ADDRESS REGISTERS 56 BASIC INSTRUCTION TYPES EXTENSIVE EXCEPTION PROCESSING MEMORY MAPPED I/O	OCR Scan	PDF	TS68008 8/16-BIT 32-BIT TS68000 TS68008 TS68000 16-bit TS68008CP8 24182 ef9367 EF6850 SN74LS73 SG 6CA SH 05.22 48-PIN A0-A21

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A0A21 Search Results

A0A21 Price and Stock

C&K KSA0A211-LFTR

C&K KSA0A211-LFT

C&K KSA0A211 LFTR

C&K KSA0A211LFTR

Nachi America UVN-1A-0A2-1.5-4-12

A0A21 Datasheets Context Search

740-0007

LH28F640BFHG-PBTL70A

M29W640DB

smartphone MOTHERBOARD CIRCUIT diagram

80 pin simm flash

MX29LV640D

MX29LV640ebt

MX29LV033

IS49NLS18320

Untitled

Untitled

TSOP56

Untitled

MX* 64M-Bit eprom

29F032B

AM29F032

29LV641

29LV033C

ADSP-2181

ADSP-2187L

CL 2181 ic

29lv641

4023 Ci

TS68008CP8