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    A1T -13 TRANSISTOR Search Results

    A1T -13 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    A1T -13 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A1T TRANSISTOR

    Abstract: AD8538 A1t SOT23 AD8628 AD8629 AD8630 AD8638 AD5541 AD5542 AD8539
    Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifier AD8638 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C Rail-to-rail output swing +16 V single- or ±8 V dual-supply operation High gain and CMRR: 133 dB typical High PSRR: 143 dB typical


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    PDF AD8638 OT-23 Prec8638ARZ1 AD8638ARZ-REEL1 AD8638ARZ-REEL71 A1T TRANSISTOR AD8538 A1t SOT23 AD8628 AD8629 AD8630 AD8638 AD5541 AD5542 AD8539

    Untitled

    Abstract: No abstract text available
    Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical


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    PDF AD8638/AD8639 AD8638 OT-23

    A1T TRANSISTOR

    Abstract: AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639 A1t SOT23
    Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical


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    PDF AD8638/AD8639 OT-23 AD8638 D06895-0-5/08 A1T TRANSISTOR AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639 A1t SOT23

    A1T TRANSISTOR

    Abstract: MO-229-WEED-4 AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639
    Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 µV maximum Offset drift: 0.04 µV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical


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    PDF AD8638/AD8639 OT-23 AD8638 AD8639 D06895-0-6/09 A1T TRANSISTOR MO-229-WEED-4 AD5541 AD8538 AD8539 AD8628 AD8629 AD8630 AD8638 AD8639

    a1t diode

    Abstract: A1T TRANSISTOR A1t 03 AD8639 a1y PACKAGE Thermopile Circuit AD5541 AD8538 MO-178-AA AD8628
    Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical


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    PDF AD8638/AD8639 AD8639: AD8638 OT-23 AD8639. D06895-0-6/10 a1t diode A1T TRANSISTOR A1t 03 AD8639 a1y PACKAGE Thermopile Circuit AD5541 AD8538 MO-178-AA AD8628

    a1T Transistor

    Abstract: MO-229-WEED-4 AD8639ARZ1 A1t SOT23 a1t diode
    Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 PIN CONFIGURATIONS Low offset voltage: 9 V maximum Offset drift: 0.04 μV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical


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    PDF AD8638/AD8639 AD8638 OT-23 OT-23 AD8638/AD8639 a1T Transistor MO-229-WEED-4 AD8639ARZ1 A1t SOT23 a1t diode

    Untitled

    Abstract: No abstract text available
    Text: 16 V Auto-Zero, Rail-to-Rail Output Operational Amplifiers AD8638/AD8639 Low offset voltage: 9 µV maximum Offset drift: 0.04 µV/°C maximum Rail-to-rail output swing 5 V to 16 V single-supply or ±2.5 V to ±8 V dual-supply operation High gain: 136 dB typical


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    PDF AD8638/AD8639 AD8639: AD8638 OT-23 D06895-0-6/10

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    transistor BD 139

    Abstract: AP 1100 R1 darlington cascode second stage transistor AT-320 agilent AT32063 AT-32063
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT32063 consists of two AT-320XX transistors mounted in a


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    PDF AT-32063 AT32063 AT-320XX OT-363 SC-70) AT-32063, transistor BD 139 AP 1100 R1 darlington cascode second stage transistor AT-320 agilent

    darlington cascode second stage

    Abstract: transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR AT-32063 d2030
    Text: Low Noise Amplifiers for 320 MHz and 850 MHz Using the AT-32063 Dual Transistor Application Note 1131 Introduction This application note discusses the Agilent Technologies AT-32063 dual low noise silicon bipolar transistor. The AT-32063 consists of two AT-320XX transistors


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    PDF AT-32063 AT-32063 AT-320XX OT-363 SC-70) AT-32063, 5966-0781E darlington cascode second stage transistor AT-320 agilent Transistor W03 56 A1T TRANSISTOR d2030

    TK 2837

    Abstract: journal op-amp 741 long range jammer gsm qpsk modulation experiment discussion tv jammer cir 2272 tv jammer data sheet Motorola Microwave power Transistor electromagnetic pulse generator jammer MZP RELAY
    Text: PLL Performance, Simulation, and Design 4th Edition Dean Banerjee “Make Everything as Simple as Possible, but not Simpler.” Albert Einstein To my wife, Nancy, and my children, Caleb, Olivia, and Anabelle Preface I first became familiar with PLLs by working for National Semiconductor as


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    PDF LMX2470 TK 2837 journal op-amp 741 long range jammer gsm qpsk modulation experiment discussion tv jammer cir 2272 tv jammer data sheet Motorola Microwave power Transistor electromagnetic pulse generator jammer MZP RELAY

    A1t amplifier

    Abstract: PQ7041
    Text: M AXIM U M RATINGS Symbol MPQ7041 C o lle c to r-E m itte r V o lta g e v CEO 150 200 250 Vdc C o lle c to r-B a se V olta g e v CB O 150 200 250 Vdc E m itte r-B a se V o lta g e v EBO 5.0 Vdc •c 500 m Adc Rating C o lle c to r C u rre n t — C o n tin u o u s


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    PDF MPQ7041 MPQ7042 MPQ7043 MPQ7043* O-116 A1t amplifier PQ7041

    a006 mosfet

    Abstract: IH5106 a006
    Text: . Intersil Hlgh-Rellablllty Product* IH5108 High Reliability 8-Channel Fault Protected CMOS Analog Multiplexer GENERAL DESCRIPTION FEATURES The IH5108 is a dielectrically isolated CMOS monolithic analog multiplexer, designed as a plug-in replacement for the HI508A and similar devices, but adds fault protection to


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    PDF IH5108 HI508A IH5108s. IHS108 a006 mosfet IH5106 a006

    A1T TRANSISTOR

    Abstract: TRANSISTOR A1t A1T -13 TRANSISTOR transistor A1t 02
    Text: That HPAEW LETT WLEM CK A RD High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light


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    PDF HBCS-1100 A1T TRANSISTOR TRANSISTOR A1t A1T -13 TRANSISTOR transistor A1t 02

    IR LED and photodiode pair

    Abstract: IR LED and photodiode PAIR DETECTOR HBCS-1100 kodak 6080 IPD5200
    Text: That H E W L E T T minM P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject


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    PDF

    T 427 transistor

    Abstract: HBCS-1100 White Paint IR LED and photodiode pair kodak 6080 High Resolution Optical Reflective Sensor IR LED and photodiode PAIR DETECTOR
    Text: That H E W L E T T minM P A C K A R D High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution-0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject


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    PDF HBCS-1100 HBCS-1100 T 427 transistor White Paint IR LED and photodiode pair kodak 6080 High Resolution Optical Reflective Sensor IR LED and photodiode PAIR DETECTOR

    Untitled

    Abstract: No abstract text available
    Text: B U R R - BROWN« VSP2080 CCD SIGNAL FRONT-END PROCESSOR FOR DIGITAL CAMERAS FEATURES DESCRIPTION • CCD SIGNAL PROCESSING Correlated Double Sampling Black Level Clamping 0 to +34dB Gain Range 55dB SNR Referred to Full Scale • SELECTABLE LOGIC-INPUT POLARITY


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    PDF VSP2080 120mW VSP2080 ZZ353 17313fcÂ

    71XS

    Abstract: L55c AD712JR AD712KR AD712JN AD712KN
    Text: ANALOG DEVICES Precision, Low Cost, High Speed, BiFET Op Amps FEATURES Enhanced Replacements for TL081; TL082; TL084 LF411; LF412; LF347 CONNECTION DIAGRAMS W LL N U U L ^ J ^ . AC PERFORMANCE Settles to ±0.01% in 1.0 |is 16 V/|is min Slew Rate 3 MHz min Unity Gain Bandwidth


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    PDF TL081; TL082; TL084 LF411; LF412; LF347 max--AD711C) max--AD712C) max--AD713K) 71XS L55c AD712JR AD712KR AD712JN AD712KN

    HD64* serial

    Abstract: No abstract text available
    Text: Section 1 Overview The H8/3332 is a single-chip embedded controller w ith an H8/300 C P U core and a complement o f on-chip supporting modules. They are particularly suited for keyboard control in notebook computers and sim ilar applications. The H8/300 C P U is a high-speed processor with a Hitachi-original architecture featuring


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    PDF H8/3332 H8/300 16-bit CG-84 CP-84 FP-80A HD64* serial

    Untitled

    Abstract: No abstract text available
    Text: HC-5504B HARRIS S E M I C O N D U C T O R SLIC Subscriber Line Interface Circuit January 1997 Description Features The Harris SLIC incorporates many of the B O R SH T functions on a single IC chip. This includes DC battery feed, a ring relay driver, supervisory and hybrid functions. This device is


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    PDF HC-5504B HC-5504 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P L ES S E Y A P R IL 1995 SEMICONDU CT OR S DS3480-3.2 MA9187 RADIATION HARD 65536 x 1 BIT STATIC RAM T he M A9187 6 4 k Static RAM is configured as 65536 x 1 bits and m anufactured using G P S ’s C M O S -S O S high perform ance, radiation hard, 1.5 ^m technology.


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    PDF DS3480-3 MA9187 A9187

    A1T TRANSISTOR

    Abstract: No abstract text available
    Text: IMDCIC MX29F81OO 8M -BITI1 M x 8 /5 1 2K x 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V +10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles Fast access time: 100/120/150ns Sector erase architecture


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    PDF 100/120/150ns MX29F81OO MXS9F81OO -100mA 100mA 100ns A1T TRANSISTOR