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    A3 SOT 23 Search Results

    A3 SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    A3 SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mark a3 sot23

    Abstract: MARKING A3 sot23 KDS181
    Text: SEMICONDUCTOR KDS181 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 A3 1 2 Item Marking Description Device Mark A3 KDS181 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    KDS181 OT-23 mark a3 sot23 MARKING A3 sot23 KDS181 PDF

    ISS181

    Abstract: 1SS181 MARKING A3
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. CATHODE MARKING: A3 2. CATHODE 3. ANODE


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    OT-23 1SS181 OT-23 100mA ISS181 ISS181 1SS181 MARKING A3 PDF

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS181 SOT-23 Switching Diodes FEATURES y Low forward voltage y Fast reverse recovery time MARKING: A3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


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    OT-23 1SS181 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM


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    OT-227 150-12io1 150-16io1 PDF

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    Abstract: No abstract text available
    Text: MCO 150 Single Thyristor Module ITRMS = 234 A VRRM = 1200-1600 V ITAV = 149 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 150-12io1 MCO 150-16io1 A3 K4 A3 Symbol Test Conditions ITRMS ITAV TVJ = TVJM


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    OT-227 150-12io1 150-16io1 PDF

    smd sot23 marking A3

    Abstract: smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 CMBD2835 CMBD2836
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 3 SOT-23 Formed SMD Package Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


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    CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 smd sot23 marking A3 smd diode marking A3 sot23 DIODE smd marking A3 smd transistor marking A3 sot-23 packing a3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES CMBD2835 CMBD2836 SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking CMBD2835 - A3 CMBD2836 - A2


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    CMBD2835 CMBD2836 OT-23 CMBD2835 CMBD2836 C-120 2836Rev050302 PDF

    Si2303DS

    Abstract: A3 MARKING CODE
    Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    Si2303DS O-236 OT-23) S-49557--Rev. 27-Apr-98 A3 MARKING CODE PDF

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    Abstract: No abstract text available
    Text: Si2303ADS Vishay Siliconix New Product P-Channel, 30-V D-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.240 @ VGS = –10 V –1.4 0.460 @ VGS = –4.5 V –1.0 VDS (V) –30 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


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    Si2303ADS O-236 OT-23) Si2303DS S-20213â 01-Apr-02 PDF

    POD-SOT23

    Abstract: 527AK MO-178 L2 SOT23-8
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−23, 8 Lead CASE 527AK−01 ISSUE A DATE 18 MAR 2009 SYMBOL E1 e E b PIN #1 IDENTIFICATION NOM MAX A 0.90 1.45 A1 0.00 0.15 A2 0.90 A3 0.60 0.80 b 0.28 0.38 c 0.08 0.22 1.10 1.30 D 2.90 BSC E 2.80 BSC E1 1.60 BSC


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    OT-23, 527AK-01 MO-178. 98AON34327E 527AK POD-SOT23 527AK MO-178 L2 SOT23-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADC081C021, ADC081C027 www.ti.com SNAS447B – FEBRUARY 2008 – REVISED FEBRUARY 2009 ADC081C021/ADC081C027 I2C-Compatible, 8-Bit Analog-to-Digital Converter with Alert Function Check for Samples: ADC081C021, ADC081C027 FEATURES 1 • 23 • • • • •


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    ADC081C021, ADC081C027 SNAS447B ADC081C021/ADC081C027 100kHz) 400kHz) PDF

    NCS2200-D

    Abstract: MARKING ee SOT235 N Channel power MOSFET SOT-23-6 b1 marking sot-23-6 NCS2200 NCS2200A NCS2200SN1T1 NCS2200SN2T1 NCS2202 MOSFET N SOT-23-6
    Text: NCS2200 Series, NCS2200A Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V which allows them to be used in systems that require less than 1.0 V


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    NCS2200 NCS2200A OT-23-5 OT-23-6 NCS2200/D NCS2200-D MARKING ee SOT235 N Channel power MOSFET SOT-23-6 b1 marking sot-23-6 NCS2200A NCS2200SN1T1 NCS2200SN2T1 NCS2202 MOSFET N SOT-23-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: NCS2200, NCS2200A, NCV2200, NCS2202A Low Voltage Comparators The NCS2200 Series is an industry first sub−one volt, low power comparator family. These devices consume only 10 mA of supply current. They are guaranteed to operate at a low voltage of 0.85 V


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    NCS2200, NCS2200A, NCV2200, NCS2202A NCS2200 NCS2200/D PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Ultra High Speed Switching Application L1SS181LT1G z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) 3 z Small total capacitance : CT = 2.2pF (typ.) z Pb-Free Package is Available. 1


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    L1SS181LT1G PDF

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


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    OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241 PDF

    1SS193

    Abstract: No abstract text available
    Text: 1SS193 SILICON EPITAXIAL PLANAR TYPE ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm hQ 5 FEATURES: 2.5-a3 . Small Package SOT-23M0D . Low Forward Voltage V p = 0 .9 V Typ. . Fast Reverse Recovery Time trr= l ,6ns(Typ.) . Small Total Capacitance Ct =0 .9pF(Typ.)


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    1SS193 OT-23M0D 01/tF 1SS193 PDF

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


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    OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6 PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌ2303DS VISMAY Siliconix ▼ P-Channel 30-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) r d s (ON) lD (A) (q ) 0.240 @ V GS = —10 V - 1 .7 0.460 @ V GS = —4.5 V - 1 .3 -3 0 TO -236 (SOT-23) G 1 3 D Top View S Ì2303D S (A3)* *M arking Code


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    2303DS OT-23) 2303D S-49557-- 27-Apr-98 PDF

    TRANSISTORE

    Abstract: BFS18 BFS19 Q62702 Q62702-F349
    Text: BFS 18 BFS 19 N P N - T r a n s i s t o r e n - H F BFS 18 und BFS 19 sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse 23 A3 DIN 41 869 SOT-23 . Die Transistoren wurden speziell für HIF-Schaltungen in Dick- und Dünnfilmtechnik geschaffen. Zur Kennzeichnung des Typs wejrden die Transistoren folgender­


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    BFS18 BFS18 OT-23) Q62702â Q62702-F349 0AH03 BFS19 TRANSISTORE BFS19 Q62702 Q62702-F349 PDF

    Untitled

    Abstract: No abstract text available
    Text: SÌ2303DS Siliconix P-Channel 30-V D-S Rated MOSFET New Product PR O D U C T S U M M A R Y v„s (V) r d s (ON) lD (A) (q ) 0.240 @ V GS = - 1 0 V - 1 .7 0.460 @ V GS = —4.5 V - 1 .3 -3 0 TO -236 (SOT-23) G 1 3 D Top View S i2303D S (A3)* *M arking Code


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    2303DS OT-23) i2303D S-49557-- 27-Apr-98 PDF

    zener diode marking E7

    Abstract: diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Typ e Device Typ e Device m arking Device m arking BA L99 E2 B Z X 84-C 4 3 X6 B A R 99 E3 B Z X 84-C 47 X7 B A S 16 A3 FM M D 914 5D B A V 70 A4 FM M D 6050 5A B A V 74


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    OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 zener diode marking E7 diode marking w8 marking J7 diode diode marking e8 marking W6 diode diode marking x6 FMMD6050 FMMD914 diode MARKING c9 BAR99 PDF

    MARKING a3 SOT-23

    Abstract: No abstract text available
    Text: Temic BF569/BF569R S e m i c o n d u c t o r s Silicon PNP Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For selfoscillating RF m ixer stages 1 R R E 3 1— 1 BF569 Marking: LH Plastic case SOT 23


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    BF569/BF569R BF569 BF569R llk40 D-74025 31-Oct-97 MARKING a3 SOT-23 PDF

    BU 508 transistor

    Abstract: FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3
    Text: TELEFUNKEN ELECTRONIC 17E J> • Ô^OO'îb 000^471 * ■ AL QG BU 508 DR 'V ITiyitFMlMKIM electronic Creato*"fechnotogies T-3 3 - I I Silicon NPN Power Transistor Applications: Horizontal deflection circuits in colour TV-receivers Features: • In tripple diffusion technique


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    T-33-13 DIN41 T0126 15A3DIN BU 508 transistor FET K 2611 diode 12A3 BU508Dr transistor 2610 D1387 transistor BU 102 BC 114 transistor TCA 321 12A3 PDF

    SOT 86 MARKING 03

    Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
    Text: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S


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    BF420S T0126 15A3DIN SOT 86 MARKING 03 transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S PDF