HM62V16258B
Abstract: No abstract text available
Text: HM62V16258B Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control Column decoder I/O15 LSB A7 A6A5 A8 A9A10A11A12MSB • • CS LB UB
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HM62V16258B
I/O15
A9A10A11
A12MSB
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HM62V16256B
Abstract: No abstract text available
Text: HM62V16256B Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control Column decoder I/O15 LSB A7 A6 A5 A8 A9A10A11A12MSB • • CS2 CS1
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HM62V16256B
I/O15
A9A10A11
A12MSB
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HM62W16258B
Abstract: No abstract text available
Text: HM62W16258B Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control Column decoder I/O15 LSB A7 A6A5 A8 A9A10A11A12MSB • • CS LB UB
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HM62W16258B
I/O15
A9A10A11
A12MSB
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HM62W16258BI
Abstract: No abstract text available
Text: HM62W16258BI Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control • • Column decoder I/O15 LSB A7 A6A5 A8 A9A10A11A12MSB • •
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HM62W16258BI
I/O15
A9A10A11
A12MSB
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A4 diode
Abstract: diode a17 diode a3 transistor A10 HM62W16256B A9A10A11
Text: HM62W16256B Series Block Diagram LSB A4 V CC A3 V SS A15 A14 A16 A1 Row decoder • • • • • Memory matrix 2,048 x 2,048 A2 A17 MSB A0 A13 I/O0 Column I/O • • Input data control Column decoder I/O15 LSB A7 A6 A5 A8 A9A10A11A12MSB • • CS2 CS1
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HM62W16256B
I/O15
A9A10A11
A12MSB
A4 diode
diode a17
diode a3
transistor A10
A9A10A11
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Hitachi DSA00176
Abstract: No abstract text available
Text: HM62V16256B シリーズ 4M SRAM 256-kwordx16-bit ADJ-203-334C (Z) Rev. 2.0 ’99. 10. 14 概要 HM62V16256B シリーズは， 262144 ワード × 16 ビット構成の 4M ビットスタティック RAM です。 Hi-CMOS プロセス技術を 採用し，高密度，高性能，低消 費電力を実現しております。し たがって，HM62V16256B シ
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HM62V16256B
256-kword
16-bit)
ADJ-203-334C
70ns/85nsMax
HM62V16256BLTT-7
HM62V16256BLTT-8
Hitachi DSA00176
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Hitachi DSA00176
Abstract: No abstract text available
Text: HM62W16256B シリーズ 4M SRAM 256-kwordx16-bit ADJ-203-335C (Z) Rev. 2.0 ’99. 10. 14 概要 HM62W16256B シリーズは， 262144 ワード × 16 ビット構成の 4M ビットスタティック RAM です。 Hi-CMOS プロセス技術を採用し，高密度，高性能，低消費電力を実現しております。したがって HM62W16256B シリ
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HM62W16256B
256-kword
16-bit)
ADJ-203-335C
55ns/70nsMax
HM62W16256BLTT-5
HM62W16256BLTT-7
Hitachi DSA00176
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM62W16256B Series 4 M SRAM 256-kword x 16-bit ADE-203-934B (Z) Rev. 1.0 March 8, 1999 Description The Hitachi HM62W16256B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16256B Series has realized higher density, higher performance and low power consumption by
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HM62W16256B
256-kword
16-bit)
ADE-203-934B
144-word
16-bit.
44-pin
ns/70
Hitachi DSA002746
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Hitachi DSA002753
Abstract: No abstract text available
Text: HM62Y16258B Series 4 M SRAM 256-kword x 16-bit ADE-203-1031B (Z) Rev. 2.0 Oct. 14, 1999 Description The Hitachi HM62Y16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62Y16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
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HM62Y16258B
256-kword
16-bit)
ADE-203-1031B
144-word
16-bit.
44-pin
ns/100
Hitachi DSA002753
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Hitachi DSAUTAZ005
Abstract: No abstract text available
Text: HM62W16258B Series 4 M SRAM 256-kword x 16-bit ADE-203-976B (Z) Rev. 2.0 Oct. 14, 1999 Description The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
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HM62W16258B
256-kword
16-bit)
ADE-203-976B
144-word
16-bit.
44-pin
ns/70
Hitachi DSAUTAZ005
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HM62W16256B
Abstract: HM62W16256BLTT-5 HM62W16256BLTT-5SL HM62W16256BLTT-7 HM62W16256BLTT-7SL
Text: HM62W16256B Series 4 M SRAM 256-kword x 16-bit ADE-203-934C (Z) Rev. 2.0 Oct. 14, 1999 Description The Hitachi HM62W16256B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16256B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
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HM62W16256B
256-kword
16-bit)
ADE-203-934C
144-word
16-bit.
HM62W16256B
44-pin
ns/70
HM62W16256BLTT-5
HM62W16256BLTT-5SL
HM62W16256BLTT-7
HM62W16256BLTT-7SL
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Hitachi DSA002753
Abstract: No abstract text available
Text: HM62W16258B Series 4 M SRAM 256-kword x 16-bit ADE-203-976B (Z) Rev. 2.0 Oct. 14, 1999 Description The Hitachi HM62W16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62W16258B Series has realized higher density, higher performance and low power consumption by employing Hi-CMOS
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HM62W16258B
256-kword
16-bit)
ADE-203-976B
144-word
16-bit.
44-pin
ns/70
Hitachi DSA002753
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM62V16258B Series 4 M SRAM 256-kword x 16-bit ADE-203-975A (Z) Rev. 1.0 March 8, 1999 Description The Hitachi HM62V16258B Series is 4-Mbit static RAM organized 262,144-word × 16-bit. HM62V16258B Series has realized higher density, higher performance and low power consumption by
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HM62V16258B
256-kword
16-bit)
ADE-203-975A
144-word
16-bit.
44-pin
ns/85
Hitachi DSA002746
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HM62W16258BI
Abstract: HM62W16258BLTTI-7
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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HM62W16258B
Abstract: HM62W16258BLTT-5 HM62W16258BLTT-5SL HM62W16258BLTT-7 HM62W16258BLTT-7SL HM62w16258
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: H I m i c I u c t o r In c Q u ic k S w itc h P ro d u c ts q s 32 x v h 245 3.3V 16-Bit Bus Switch for Hot SwaP Applications HotSwitch FEATURES/BENEFITS DESCRIPTION • The QS32XVH245 HotSwitch 16-bit bus switch is specially designed for hot-swapping environment.
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16-Bit
QS32XVH245
200ps
006in.
003in.
DDD3753
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PSEU
Abstract: No abstract text available
Text: A WM0 G1 21 DO 8192 x 8-BIT PSEUDOSTATIC RAM • JEDED JC-42 Standard Pinout ■ Synchronous and Asynchronous Versions ■ Single-Step Capability ■ Fully Integrated On-Chip Refresh ■ Two-Line Data Bus Control ■ On-Chip Signal Arbitration ■ Single +5V ±1 0 % Supply
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JC-42
8192-word
A0-A12
PSEU
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products & U O O R IN C qs32xvh 245 3.3V 16-Bit Bus Switch , o r H o t S w a P Applications HotSwitch FEATURES/BENEFITS DESCRIPTION • The QS32XVH245 HotSwitch 16-bit bus switch is specially designed for hot-swapping environment. The QS32XVH245 has very low ON resistance
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16-Bit
qs32xvh
150MHz
40-pin
QS32XVH245
MDSL-00335-00
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QS3R245
Abstract: millipaq package C2259 QS34XR245 QS34XR245Q3
Text: m QS34XR245 QuickSwitch Products High-Speed CMOS QuickSwitch 32-pit Low Resistance MultiWidth pus Switches Q uality S em ic o n d u c to r , I n c . ADVANCE INFORMATION DESCRIPTION FEATURES/BENEFITS The QS34XR245 is a member of the M ultiW idth™ family of QuickSwitch devices and provides a set of
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32-pit
QS34XR245
QS34XR245Q3
32-bit
QS3R245
80-pin
AN-13)
QS34XR245
MDSL-00253-00
millipaq package
C2259
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DAC1508
Abstract: DAC1408A/DAC1508 DAC1408ADC DAC1508DM DAC-1508 DAC1408A DAC1408APC DAC1408BDC DAC1408BPC DAC1408CDC
Text: DAC1408/1508 Series 8-Bit Multiplying D/A Converters FAIRCHILD A Schlum berger C om pany _Unear_Division_Data_Ac2 uisition Description Connection Diagram 16-Lead DIP Top View The DAC140 8/1 5 0 8 Series are monolithic 8-bit multiplying digital-to-analog converters constructed using the Fairchild
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DAC1408/1508
DAC1408A
DAC1408B,
DAC1408C
dac1408
DAC1508
DAC1408A/DAC1508
DAC1408ADC
DAC1508DM
DAC-1508
DAC1408A
DAC1408APC
DAC1408BDC
DAC1408BPC
DAC1408CDC
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A13F
Abstract: No abstract text available
Text: K M fi electronic June 1992 HM 65790 HI-REL DATA SHEET 16 k X 4 HIGH SPEED CMOS SRAM SEPARATE I/O FEATURES FAST ACCESS TIME : 25/35 /45/55 ns LOW POWER CONSUMPTION ACTIVE : 267 mW typ STANDBY : 75 mW (typ) TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN
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Sflbfl45b
A13F
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Untitled
Abstract: No abstract text available
Text: IlM lI Septem ber 198£ HM 65791 DATASHEET 16 K x 4 HIGH SPEED CMOS SRAM SEPARATE I/O AND TRANSPARENT WRITE FEATURES FAST ACCESS TIME MILITARY : 35/45 ns max COMMERCIAL : 25/35/45 ns (max) LOW POWER CONSUMPTION ACTIVE : 267 mW (typ) STANDBY : 75 mW (typ)
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Untitled
Abstract: No abstract text available
Text: VG3617161BT 16Mb CMOS Synchronous Dynamic RAM VIS D escription The V G 3 6 1 7161 BT is C M O S S ynchronous D ynam ic RAM organized as 5 2 4 ,288-w ord X 16-bit X 2-bank. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single 3.3V
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VG3617161BT
288-w
16-bit
50-pin
QMEN90N
G5-0150
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Untitled
Abstract: No abstract text available
Text: VG3617801CT 16Mb CMOS Synchronous Dynamic RAM VIS D escription The V G 36 1780 1 C T is C M O S S ynchronous D ynam ic R AM s organized as 1,048,576-w ord X 8 -bit X 2bank. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and is designed to operate from a s in
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VG3617801CT
576-w
PR0TRU90N
QMEN90N
G5-0133
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