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    ABB IGBT DIE Search Results

    ABB IGBT DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    ABB IGBT DIE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    abb traction motor

    Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12
    Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the


    Original     		CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12 PDF

    schematic diagram igbt inverter welding machine

    Abstract: wind energy simulink matlab wind SOLAR simulink matlab UNITROL 1000 rc helicopter circuit diagram abb acs800 bridge circuit diagram igct abb ABB Thyristor YST PROJECT REPORT ON 220 kv substation thyristor aeg
    Text: ABB Review The corporate technical journal of the ABB Group www.abb.com/abbreview 3 / 2008 Pioneering spirits Power electronics revolution in high dc current IGBT: aA tiny chip with a huge impact page 19 measurement page 6 Team-mates: MultiMove functionality


    Original     		PDF

    76K1280

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12K1280 CH-5600 76K1280 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12K1280 CH-5600 PDF

    132102

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12J1280 CH-5600 132102 PDF

    12M1280

    Abstract: 5SMY12M1280
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12M1280 CH-5600 12M1280 5SMY12M1280 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1280 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1321-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12J1280 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12M1280 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12H1280 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12K1280 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12H1280 CH-5600 PDF

    Polyimide

    Abstract: 12M1280
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12M1280 60747ut CH-5600 Polyimide 12M1280 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4500 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-00 Jan 08 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Poymide


    Original     		12N4500 CH-5600 PDF

    abb press-pack igbt

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 55 A IGBT-Die 5SMY 12N4501 Die size: 14.3 x 14.3 mm Doc. No. 5SYA 1646-01 11 11 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride


    Original     		12N4501 CH-5600 abb press-pack igbt PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original     		12K1201 CH-5600 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1273 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1637-00 July 06 • Low loss thin IGBT die • Highly rugged SPT design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original     		12M1273 5SYA1637-00 CH-5600 PDF

    5SLY12L4500

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 42 A IGBT-Die 5SMY 12L4500 Die size: 12.8 x 12.8 mm Doc. No. 5SYA 1310-01 May 08 • • • • Ultra low loss IGBT die Highly rugged SPT+ design Large front bondable area Passivation: SIPOS and silicon nitride plus polyimide Maximum rated values


    Original     		12L4500 CH-5600 5SLY12L4500 PDF

    MJ86

    Abstract: 57 A
    Text: VCE IC = = 1200 V 57 A IGBT-Die 5SMY 12H1280 Die size: 9.1 x 9.1 mm Doc. No. 5SYA 1320-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values


    Original     		12H1280 CH-5600 MJ86 57 A PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMX 12M1274 Die size: 13.6 x 13.6 mm Doc. No. 5SYA 1305-00 May 08 • • • • Low loss thin IGBT die Highly rugged SPT design Large bondable emitter area Optimized for paralleling Maximum rated values Parameter Collector-emitter voltage


    Original     		12M1274 CH-5600 PDF

    5SMY 12M3300

    Abstract: 5SMY12M3300 C621-25
    Text: VCE IC = = 3300 V 62 A IGBT-Die 5SMY 12M3300 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1311-01 May 08 • • • • Ultra low loss IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: SIPOS Nitride plus Polyimide Maximum rated values Parameter


    Original     		12M3300 5SYA1311-01 CH-5600 5SMY 12M3300 5SMY12M3300 C621-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMY 12J1200 Die size: 10.2 x 10.2 mm Doc. No. 5SYA 1636-00 July 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions


    Original     		12J1200 CH-5600 PDF

    tda 2038

    Abstract: tda 2023
    Text: IGBT-Module BROUN/ABB SEMICON D7E D | 004fl30fl DOODEMD 3 | A S E A r- 3 3 - ^ 7 f t^ f ' p 500-600V ; : Spannung/Voltage ^ Typ/type VII 25-.G1 VII 50-.G1 VII 75-.G1 Kollektor-Emitter-Durchbruchspannung Collector-Emltter Breakdown Voltage V Br ces V 500


    OCR Scan     		004fl30fl 00-600V VII100-. VII150-. VII200-. tda 2038 tda 2023 PDF

    IGBT abb

    Abstract: No abstract text available
    Text: I G B T H I GH P O W E R _ M O D U L E S ABB Semiconductors manufactures a range of high power custom and semi-custom IGBT modules for demanding applications in traction, heavy industrial and power systems markets. This range is comple­


    OCR Scan     		PDF

    VERIDUL M

    Abstract: abb inverter veridul VERIDUL V of VERIDUL M abb dc motor IGBT abb abb motor ABB 600 TEN 88DE
    Text: A S E A IGBT-Module BROUN/ABB SENICON 0?E D | 0040300 OOOOEMO 3 | ^_ r- 3 3 - ^ 7 f t r ' : • ■ ■ Spannung/Voltage Kotlektor-Emitter-Durchbruchspannung Collector-Emltter Breakdown Voltage ■ ■ Typ/type 500-600V ■ VII 25-.G1 VII 50-.G1 VII75-.G1


    OCR Scan     		00-600V VII75-. VII100-. VERIDUL M abb inverter veridul VERIDUL V of VERIDUL M abb dc motor IGBT abb abb motor ABB 600 TEN 88DE PDF