Ablecube
Abstract: ATM-0018 Ablestik ATM-0087 ablebond ablebond technical 8200C ATM-0089 ablebond ablestik ablestik ablebond
Text: PILOT TECHNICAL DATASHEET ABLEBOND 8200C ELECTRICALLY CONDUCTIVE DIE ATTACH ADHESIVE DESCRIPTION ABLEBOND® 8200C low bleed die attach adhesive is designed for small and medium sized dies across a variety of leadframes including PPF, Cu and Ag. This electrically conductive adhesive offers improved JEDEC
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8200C
8200C
RP-751
Ablecube
ATM-0018
Ablestik
ATM-0087
ablebond
ablebond technical
ATM-0089
ablebond ablestik
ablestik ablebond
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JEDEC JESD22-B116 free
Abstract: SUMIKON EME-G700 EME-G700 ablebond 3230 SUMItomo EME-G700 Sumitomo EME-G700 material Ablebond 84-1*SR4 Ablebond 8390 sumitomo G700 Tg ablebond 8390 cure time
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR-0212-02 DATE: 12/20/2002 Product Affected: TSOP package family (see attachment for affected part #s). Date Effective: 3/20/2003 Contact: George Snell
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SR-0212-02
EME-G700
JEDEC JESD22-B116 free
SUMIKON EME-G700
EME-G700
ablebond 3230
SUMItomo EME-G700
Sumitomo EME-G700 material
Ablebond 84-1*SR4
Ablebond 8390
sumitomo G700 Tg
ablebond 8390 cure time
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Ablebond 190
Abstract: ablebond technical
Text: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: 100 kHz Typical • Single Supply Operation:
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HMMC-5220
HMMC-5220
Ablebond 190
ablebond technical
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Ablebond 36-2
Abstract: 71-1LM1 HMMC-5220 Ablebond 190 ablebond technical hmmc-5
Text: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:
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HMMC-5220
HMMC-5220
5968-1782E
Ablebond 36-2
71-1LM1
Ablebond 190
ablebond technical
hmmc-5
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Untitled
Abstract: No abstract text available
Text: DC – 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5220 Features • High Bandwidth, F-1dB: 16 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:
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HMMC-5220
HMMC-5220
5968-1782E
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Ablebond 190
Abstract: No abstract text available
Text: DC – 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5200 Features • High Bandwidth, F-1dB: 21 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: 100 kHz Typical • Single Supply Operation:
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HMMC-5200
HMMC-5200
Ablebond 190
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Ablebond 71
Abstract: HP Application Note 934 Ablebond HMMC-5200 Ablebond 190 Ablebond 36-2
Text: DC – 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5200 Features • High Bandwidth, F-1dB: 21 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:
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HMMC-5200
HMMC-5200
5968-1783E
Ablebond 71
HP Application Note 934
Ablebond
Ablebond 190
Ablebond 36-2
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Untitled
Abstract: No abstract text available
Text: DC – 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC-5200 Features • High Bandwidth, F-1dB: 21 GHz Typical GND VCC GND • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P-1dB @ 1.5 GHz: 12 dBm Typical • Low l/f Noise Corner: <20 kHz Typical IN OUT
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HMMC-5200
HMMC-5200
5968-1783E
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Ablebond 84-1*SR4
Abstract: z9925 EIAJ ED-4701 MARK A48 857L TSMC 0.35um Volt, SPDM, CMOS 98068A 0.6 um cmos process ablebond 84-1lmisr4
Text: Reliability Summary Report PI6CV857A August 28, 2002 Reliability by Design Page 1 of 20 INDEX: Commitment to Quality: Page 3 Product Family and Wafer Fab Process: Page 4 Wafer Fab Subcontractors and Codes: Page 4 Standard Package Type Code and Dimensions:
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PI6CV857A
Ablebond 84-1*SR4
z9925
EIAJ ED-4701
MARK A48
857L
TSMC 0.35um
Volt, SPDM, CMOS
98068A
0.6 um cmos process
ablebond 84-1lmisr4
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NDA-310-D
Abstract: VCC1
Text: NDA-310-D InGaP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 15GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers Product Description
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NDA-310-D
NDA-310-D
10GHz
14GHz
15GHz
20GHz
VCC1
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Untitled
Abstract: No abstract text available
Text: NDA-310-D 4 GaInP/GaAs HBT MMIC DISTRIBUTED AMPLIFIER DC TO 15GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs Military Radio Designs • Linear and Saturated Amplifiers GENERAL PURPOSE
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NDA-310-D
15GHz
NDA-310-D
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84-1LMI
Abstract: NDA-310-D
Text: NDA-310-D *D,Q3*D$V +%7 00,& ',675,%87 ' $03/, ,(5 '& 72 *+] 7\SLFDO $SSOLFDWLRQV • Narrow and Broadband Commercial and Military Radio Designs • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs • Linear and Saturated Amplifiers GENERAL PURPOSE
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NDA-310-D
NDA-310-D
84-1LMI
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Ablestik 84-1LMIT1
Abstract: 120C 155C 84-1LMIT1 SNA-200 SNA-276
Text: Product Description SNA-200 Stanford Microdevices’ SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 16dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias
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SNA-200
SNA-200
SNA-276,
84-1LMIT1
Ablestik 84-1LMIT1
120C
155C
SNA-276
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110C
Abstract: 140C 155C 84-1LMIT1 SNA-600 SNA-676 linear amplifier P1dB 36dBm
Text: Product Description SNA-600 Stanford Microdevices’ SNA-600 is a high-performance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband performance to 6.5 GHz. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier
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SNA-600
SNA-600
18dBm
100mA.
SNA-676,
84-1LMIT1
110C
140C
155C
SNA-676
linear amplifier P1dB 36dBm
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NT 407 F transistor
Abstract: SNA-376 nt 407 f 100C 120C 135C 155C 84-1LMIT1 SNA-300
Text: Product Description SNA-300 Stanford Microdevices’ SNA-300 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 22dB of gain when biased at 35mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias
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SNA-300
SNA-300
SNA-376,
11the
84-1LMIT1
NT 407 F transistor
SNA-376
nt 407 f
100C
120C
135C
155C
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NT1004
Abstract: Ablestik 84-1LMIT1 120C 155C 84-1LMIT1 DC-10 SNA-100 SNA-176 DB266
Text: Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias
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SNA-100
SNA-100
DC-10
SNA-176,
84-1LMIT1
NT1004
Ablestik 84-1LMIT1
120C
155C
SNA-176
DB266
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AMMC-6233
Abstract: AV02-0312EN 30458 A004R 6233
Text: AMMC-6233 18 to 32 GHz GaAs Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)
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AMMC-6233
AMMC-6233
MC-6233
AV02-0312EN
30458
A004R
6233
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NDA-310-D
Abstract: 84-1LMI Ablebond 190
Text: GaInP/GaAs HBT MMIC Distributed Amplifier NDA-310-D DC-15 GHz 6000048 Rev. A 1 Features Applications • • • • • • • Reliable low-cost HBT-based design 9 dB Gain, +14.8 dBm P1dB @ 2 GHz High P1dB of +15.0 dBm at 6.0 GHz and +9.4 dBm at 14.0 GHz
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NDA-310-D
DC-15
84-1LMI
10420-F
NDA-310-D
Ablebond 190
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Untitled
Abstract: No abstract text available
Text: What HEWLETT 1 "KM PACKARD DC - 15 GHz HBT Series-Shunt Amplifier Technical Data HMMC 5220 Features • High Bandwidth, F_ldB: 16 GHz Typical ' GND 1 v cc GND • M oderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P id B out @ 1-5 GHz: 12 dBm Typical • Low 1/f N oise Corner:
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HMMC-5220
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Untitled
Abstract: No abstract text available
Text: What H EW LETT 1 W M P ACK A RD DC - 20 GHz HBT Series-Shunt Amplifier Technical Data HMMC 5200 Features • High Bandwidth, F_ldB: 21 GHz Typical ' GND 1 Vcc 1 1 ' GND 1 • M oderate Gain: S>@ 9.5 dB ±1 dB @ 1.5 GHz • P id B ' 1 @ 1-5 GHz: 12 dBm Typical
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HMMC-5200
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Untitled
Abstract: No abstract text available
Text: E l Stanford Microdevices Product Description SNA-200 Stanford Microdevices' SNA-200 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides !6dB of gain when biased at 50mA and 4V. DC-6.5 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency
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SNA-200
SNA-276,
SNA-200
84-1LMIT1
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Untitled
Abstract: No abstract text available
Text: e=DStanford Microdevices Product Description SNA-100 Stanford Microdevices’ SNA-100 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 12dB of gain when biased at 50mA and 4V. DC-10 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency
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SNA-100
SNA-176,
SNA-100
DC-10
84-1LMIT1
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Untitled
Abstract: No abstract text available
Text: IStanford Microdevices Product Description SNA-600 Stanford M icrodevices’ SNA-600 is a high-perform ance GaAs Heterojunction Bipolar Transistor MMIC in die form. A Darlington configuration is utilized for broadband perfor mance to 6.5 GHz. DC-6.5 GHz, Cascadable
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SNA-600
SNA-600
18dBm
100mA.
SNA-676,
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Untitled
Abstract: No abstract text available
Text: Product Description SNA-300 Stanford M icrodevices’ SNA-300 is a GaAs m onolithic broad band am plifier MMIC in die form. This am plifier provides 22dB of gain when biased at 35m A and 4V. External DC decoupling capacitors determ ine low frequency response. The use of an external resistor allow s for bias
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SNA-300
SNA-300
SNA-376,
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