Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ACPR885 Search Results

    ACPR885 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    blc6g27ls-100

    Abstract: BLC6G27-100 LDMOS SOT975B 3400 CDMA SOT608B BLF6G27-135 BLF6G27-45 BLF6G27LS-135
    Text: WiMAX product portfolio Product type Package Matching Frequency Band Min - Max (I/O) (MHz) Supply Voltage Output Power typical Test signal Power Gain typical Drain Efficiency typical ACPR885 (dB) (N %) (dBc) N-CDMA 16 @ 2500 22,5 (W) Class Die technology


    Original     		ACPR885 BLF6G27LS-135 OT502B BLF6G27-135 OT502A BLC6G27LS-100 OT896B BLC6G27-100 OT895A OT608A blc6g27ls-100 BLC6G27-100 LDMOS SOT975B 3400 CDMA SOT608B BLF6G27-135 BLF6G27-45 BLF6G27LS-135 PDF

    RF35

    Abstract: No abstract text available
    Text: BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 01 — 4 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF6G27-10; BLF6G27-10G ACPR885k ACPR1980k BLF6G27-10 BLF6G27-10G RF35 PDF

    TRANSISTOR J601

    Abstract: gp816 RF35 J2396 J249
    Text: BLF6G38-10; BLF6G38-10G WiMAX power LDMOS transistor Rev. 01 — 3 February 2009 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz. Table 1. Typical performance


    Original     		BLF6G38-10; BLF6G38-10G ACPR885k ACPR1980k BLF6G38-10 BLF6G38-10G TRANSISTOR J601 gp816 RF35 J2396 J249 PDF

    BLF7G27LS-100

    Abstract: BLF7G27L-100 ACPR1980 BLF7G27 flanged pin
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-100; BLF7G27LS-100 ACPR885k IS-95 IS-95 BLF7G27L-100 7G27LS-100 BLF7G27LS-100 ACPR1980 BLF7G27 flanged pin PDF

    150P

    Abstract: BLF7G27LS-150P ACPR1980 ACPR885
    Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-150P; BLF7G27LS-150P IS-95 ACPR885k IS-95 BLF7G27L-150P 7G27LS-150P 150P BLF7G27LS-150P ACPR1980 ACPR885 PDF

    BLF7G20L-90P

    Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
    Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70 PDF

    BLF7G24LS

    Abstract: BLF7G24L-140 BLF7G24LS-140 nxp semiconductors
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 1 — 5 August 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k IS-95 BLF7G24L-140 7G24LS-140 BLF7G24LS BLF7G24LS-140 nxp semiconductors PDF

    BLF7G20LS-140P

    Abstract: 850 SMD Rework Station RF35
    Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35 PDF

    BLF7G27L-100

    Abstract: No abstract text available
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 01 — 21 April 2010 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-100; BLF7G27LS-100 IS-95 ACPR885k IS-95 BLF7G27L-100 7G27LS-100 PDF

    J122 SMD TRANSISTOR

    Abstract: BLC6G22L-40BN/2 800B BLF6G22L-40BN
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		BLF6G22L-40BN J122 SMD TRANSISTOR BLC6G22L-40BN/2 800B BLF6G22L-40BN PDF

    BU 0603

    Abstract: 800B BLF6G15L 029-KW
    Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 2 — 3 November 2010 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		BLF6G15L-250PBRN BU 0603 800B BLF6G15L 029-KW PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 01 — 3 May 2010 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF6G27-100; BLF6G27LS-100 ACPR885k ACPR1980k ACPR10M BLF6G27-100 BLF6G27LS-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-140; BLF7G27LS-140 IS-95 ACPR885k BLF7G27L-140 7G27LS-140 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-100; BLF7G24LS-100 Power LDMOS transistor Rev. 3 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-100; BLF7G24LS-100 IS-95 ACPR885k BLF7G24L-100 7G24LS-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


    Original     		BLF7G24L-140; BLF7G24LS-140 IS-95 ACPR885k BLF7G24L-140 7G24LS-140 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		BLF6G15LS-250PBRN PDF

    SmD TRANSISTOR a75

    Abstract: No abstract text available
    Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		BLF7G20LS-140P ACPR400k ACPR600k SmD TRANSISTOR a75 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-90P; BLF7G27LS-90P Power LDMOS transistor Rev. 2 — 10 November 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-90P; BLF7G27LS-90P IS-95 ACPR885k IS-95 BLF7G27L-90P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G27L-40P; BLF6G27LS-40P Power LDMOS transistor Rev. 1 — 4 July 2011 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF6G27L-40P; BLF6G27LS-40P IS-95 ACPR885k IS-95 BLF6G27L-40P 6G27LS-40P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-100; BLF7G27LS-100 ACPR885k IS-95 IS-95 BLF7G27L-100 7G27LS-100 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G22L-40BN Power LDMOS transistor Rev. 1 — 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


    Original     		BLF6G22L-40BN PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G27L-140; BLF7G27LS-140 Power LDMOS transistor Rev. 3 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF7G27L-140; BLF7G27LS-140 ACPR885k IS-95 IS-95 BLF7G27L-140 7G27LS-140 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2325L-105 Power LDMOS transistor Rev. 2 — 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.


    Original     		BLS7G2325L-105 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor Rev. 4 — 7 March 2013 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


    Original     		BLF6G27-45; BLF6G27S-45 ACPR885k ACPR1980k BLF6G27-45 PDF