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Advanced Energy Industries Inc ADQ700-48S12-4LI 700W, 40 - 60VIN, 12V@58A, QUART
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADQ700-48S12-4LI	Box	96		1	1 $80.14 10 $80.14 100 $80.14 1000 $80.14 10000 $80.14	Buy Now
Avnet Americas	ADQ700-48S12-4LI	Bulk		16 Weeks	96	1 - 10 - 100 $78.2142 1000 $78.2142 10000 $78.2142	Buy Now
Mouser Electronics	ADQ700-48S12-4LI					1 - 10 - 100 $83.25 1000 $83.25 10000 $83.25	Get Quote
Onlinecomponents.com	ADQ700-48S12-4LI					1 - 10 - 100 $82.09 1000 $82.09 10000 $82.09	Buy Now
Avnet Abacus	ADQ700-48S12-4LI			26 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Advanced Energy Industries Inc ADQ700-48S12B-4LI 700W, 40 - 60VIN, 12V@58A, QUART
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADQ700-48S12B-4LI	Tray	95		1	1 $84.42 10 $84.42 100 $84.42 1000 $84.42 10000 $84.42	Buy Now
Avnet Americas	ADQ700-48S12B-4LI	Bulk		16 Weeks	96	1 - 10 - 100 $102.5484 1000 $102.5484 10000 $102.5484	Buy Now
Mouser Electronics	ADQ700-48S12B-4LI		68			1 $107.42 10 $105.72 100 $90.71 1000 $90.71 10000 $90.71	Buy Now
Onlinecomponents.com	ADQ700-48S12B-4LI					1 - 10 - 100 $86.49 1000 $86.49 10000 $86.49	Buy Now
Avnet Abacus	ADQ700-48S12B-4LI			26 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Advanced Energy Industries Inc ADQ700-48S12-4L 700W, 40 -60VIN, 12V@58A, QUARTE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADQ700-48S12-4L	Box	93		1	1 $75.84 10 $75.84 100 $75.84 1000 $75.84 10000 $75.84	Buy Now
Avnet Americas	ADQ700-48S12-4L	Bulk		16 Weeks	96	1 - 10 - 100 $74.0174 1000 $74.0174 10000 $74.0174	Buy Now
Mouser Electronics	ADQ700-48S12-4L					1 - 10 - 100 $78.78 1000 $78.78 10000 $78.78	Get Quote
Onlinecomponents.com	ADQ700-48S12-4L					1 - 10 - 100 $77.69 1000 $77.69 10000 $77.69	Buy Now
Avnet Abacus	ADQ700-48S12-4L			26 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Advanced Energy Industries Inc ADQ700-48S12B-4L 700W, 40 - 60VIN, 12V@58A, QUART
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADQ700-48S12B-4L	Box	20		1	1 $78.7 10 $78.7 100 $78.7 1000 $78.7 10000 $78.7	Buy Now
Avnet Americas	ADQ700-48S12B-4L	Bulk		16 Weeks	96	1 - 10 - 100 $76.8112 1000 $76.8112 10000 $76.8112	Buy Now
Mouser Electronics	ADQ700-48S12B-4L					1 - 10 - 100 $86.46 1000 $86.46 10000 $86.46	Get Quote
Onlinecomponents.com	ADQ700-48S12B-4L					1 - 10 - 100 $82.23 1000 $82.23 10000 $82.23	Buy Now
Avnet Abacus	ADQ700-48S12B-4L			26 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Advanced Energy Industries Inc ADQ700-48S12B-4LIHS DC DC CONVERTER 4.6MM PMBUS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ADQ700-48S12B-4LIHS	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Abacus	ADQ700-48S12B-4LIHS				96	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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ADQ7 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
VFBGA44 Abstract: M58WR016KL M58WR016KU M58WR032KL M58WR032KU ADQ12 Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL 16- or 32-Mbit x16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Data Brief Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers – VPP = 9 V for fast Program	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL 32-Mbit VFBGA44 M58WR016KL M58WR032KL ADQ12	PDF
BCR10 Abstract: M69KM096AA Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus	Original	M69KM096AA 83MHz 32-Word) 83MHz BCR10 M69KM096AA	PDF
Untitled Abstract: No abstract text available Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFXXX16Q2A 80x11 KFG1G16Q2A) KFN2G16Q2A)	PDF
216-ball Abstract: Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MT42L128M64D4 MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32 Text: 2Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 Features Options • VDD2: 1.2V • Configuration – 16 Meg x 16 x 8 banks x 1 die	Original	MT42L128M16D1, MT42L64M32D1, MT42L64M64D2, MT42L128M32D2, MT42L256M32D4, MT42L128M64D4 MT42L96M64D3, MT42L192M32D3 09005aef83f3f2eb 216-ball Dual LPDDR2 LPDDR2 SDRAM micron LPDDR2 1Gb Memory MR63 Micron LPDDR2 lpddr2 168 lp-ddr2 MT42L256M32	PDF
SLC NAND endurance 100k Abstract: No abstract text available Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0	Original	KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k	PDF
samsung 2GB Nand flash 121 pins Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1	Original	KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA samsung 2GB Nand flash 121 pins samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash	PDF
4GB MLC NAND Abstract: SAMSUNG NAND Flash MLC Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	KFM2G16Q2M-DEBx) KFN4G16Q2M-DEBx) KFM2G16Q2M KFN4G16Q2M 80x11 KFM2G16Q2M) KFN4G16Q2M) 4GB MLC NAND SAMSUNG NAND Flash MLC	PDF
M59MR032C Abstract: M59MR032D w849 ADQ14 Text: M59MR032C M59MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory • SUPPLY VOLTAGE – VDD = VDDQ = 1.65V to 2.0V for Program, Erase and Read ■ – VPP = 12V for fast Program (optional) MULTIPLEXED ADDRESS/DATA ■ SYNCHRONOUS / ASYNCHRONOUS READ	Original	M59MR032C M59MR032D 100ns LFBGA54 BGA46 M59MR032C M59MR032D w849 ADQ14	PDF
S72NS512RE0 Abstract: DDQ15 S72NS512RD0 spansion marking date code S29NS-R S72NS128 Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)	Original	S72NS-R S72NS512RE0 DDQ15 S72NS512RD0 spansion marking date code S29NS-R S72NS128	PDF
IS66WVD2M16DALL Abstract: CellularRAM 66WVD2M16DALL Text: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst	Original	IS66WVD2M16DALL IS66WVD2M16DALL 32Mbit -40oC 2Mx16 IS66WVD2M16DALL-7013BLI IS66WVD2M16DALL-7010BLI IS66WVD2M16DALL-7008BLI 54-ball CellularRAM 66WVD2M16DALL	PDF
Untitled Abstract: No abstract text available Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, Mux I/O, Multiple Bank, Burst 1.8 V supply Flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for Program, Erase and Read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR032KL70ZA6F	PDF
Untitled Abstract: No abstract text available Text: M58MR032C M58MR032D 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory PRELIMINARY DATA • SUPPLY VOLTAGE – VDD = VDDQ = 1.7V to 2.0V for Program, Erase and Read – VPP = 12V for fast Program (optional) ■ MULTIPLEXED ADDRESS/DATA ■	Original	M58MR032C M58MR032D 40MHz 100ns TFBGA48	PDF
st MCP Abstract: No abstract text available Text: M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 128 Mbit Mux I/O, Multiple Bank, Multi-Level, Burst Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package Preliminary Data Feature summary • ■ ■ ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Mux I/O	Original	M36L0R7060U1 M36L0R7060L1 M36L0R7050U1 M36L0R7050L1 64Mbit M36L0R7060U1: 882Eh, M36L0R7050U1: 882Eh M36L0R7060L1: st MCP	PDF
bcr10 Abstract: No abstract text available Text: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ Multiplexed Address/Data bus	Original	M69KM096AA 83MHz 32-Word) 83MHz bcr10	PDF

M58WR064K Abstract: No abstract text available Text: M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 16-, 32- and 64-Mbit x 16, mux I/O, multiple bank, burst 1.8 V supply flash memories Features • Supply voltage – VDD = 1.7 V to 2 V for program, erase and read – VDDQ = 1.7 V to 2 V for I/O buffers	Original	M58WR016KU M58WR016KL M58WR032KU M58WR032KL M58WR064KU M58WR064KL 64-Mbit M58WR064K	PDF
M1012 Abstract: No abstract text available Text: 4Gb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 Features Options • VDD2: 1.2V • Configuration – 32 Meg x 16 x 8 banks x 1 die – 16 Meg x 32 x 8 banks x 1 die	Original	MT42L256M16D1, MT42L128M32D1, MT42L256M32D2, MT42L128M64D2, MT42L512M32D4, MT42L192M64D3, MT42L256M64D4 134-ball 168-ball 216-ball M1012	PDF
M39P0R1080E4 Abstract: M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD Text: M39P0R9080E4 M39P0R1080E4 512 Mb or 1 Gb x16, multiple bank, multilevel, burst Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 512 Mbit (32 Mb x16) or 1 Gbit (64 Mb ×16) multiple bank, multilevel, burst)	Original	M39P0R9080E4 M39P0R1080E4 TFBGA165 64-bit M39P0R1080E4 M39P0R9080E4 M58PR001LE M58PR512LE M39P0R09080E4 BCAS SD	PDF
CR10 Abstract: CR14 M58WR064HL M58WR064HU VFBGA44 Text: M58WR064HU M58WR064HL 64 Mbit 4Mb x16, Mux I/O, Multiple Bank, Burst 1.8V supply Flash memories Feature summary • Supply voltage –VDD = 1.7V to 2V for Program, Erase and Read – VDDQ = 1.7V to 2V for I/O Buffers – VPP = 12V for fast Program (9V tolerant)	Original	M58WR064HU M58WR064HL 66MHz CR10 CR14 M58WR064HL M58WR064HU VFBGA44	PDF
spansion marking date code Abstract: No abstract text available Text: S71XS-S based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet Advance Information S71XS-S based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion	Original	S71XS-S spansion marking date code	PDF
S72NS128RD0AHBL Abstract: 2118 FAMILY DRAM block diagram 2118 FAMILY DRAM S29NS-R S72NS512RD0 S72NS512RE0 S72NS128RD0AHBL0 Text: S72NS-R Based MCPs MirrorBit Flash Memory and DRAM 128/256/512 Mb 8/16/32 M x 16 bit , 1.8 Volt-only, Multiplexed Simultaneous Read/Write, Burst Mode Flash Memory 128/256 Mb (8/16 M x 16 bit) DDR DRAM on Split Bus S72NS-R Based MCPs Cover Sheet Data Sheet (Advance Information)	Original	S72NS-R S72NS128RD0AHBL 2118 FAMILY DRAM block diagram 2118 FAMILY DRAM S29NS-R S72NS512RD0 S72NS512RE0 S72NS128RD0AHBL0	PDF
KFM5616Q1A-DEB6 Abstract: No abstract text available Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY	Original	MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 KFM5616Q1A-DEB6	PDF
63FBGA Abstract: KFN4G16Q2A Text: MuxOneNAND2G KFM2G16Q2A-DEBx MuxOneNAND4G(KFN4G16Q2A-DEBx) FLASH MEMORY KFM2G16Q2A KFN4G16Q2A 2Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	KFM2G16Q2A-DEBx) KFN4G16Q2A-DEBx) KFM2G16Q2A KFN4G16Q2A 80x11 KFM2G16Q2A) KFN4G16Q2A) 63FBGA KFN4G16Q2A	PDF
Untitled Abstract: No abstract text available Text: □ MN102LP25G / L25GILP25Z /LF25Z /L25Z /LP25D /L25D/LP25A / L25A / L2503 MN102LP25G /L25G /LP25Z /LF25Z /L25Z /LP25D /L25D /LP25A /L25A /L2503 For MN102LP25G and L25G, ES samples are available. LF25Z, LP25A and L25A are under development. 1 Type 1 ROM	OCR Scan	MN102LP25G /L25GLP25Z /LF25Z /L25Z /LP25D /L25D/LP25A/L25A/L2503 /L25G /LP25Z	PDF
M29F800A3BT12 Abstract: m29f800a3br 29F800A Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max	OCR Scan	M29F800A3/D M29F800A3-- M29F80QA M29F800A3-12 M29F800A3 M29F800A2 48-Pin M29F800A3U M29F800A3B M29F800A3BT12 m29f800a3br 29F800A	PDF

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ADQ7 Search Results

ADQ7 Price and Stock

Advanced Energy Industries Inc ADQ700-48S12-4LI

Advanced Energy Industries Inc ADQ700-48S12B-4LI

Advanced Energy Industries Inc ADQ700-48S12-4L

Advanced Energy Industries Inc ADQ700-48S12B-4L

Advanced Energy Industries Inc ADQ700-48S12B-4LIHS

ADQ7 Datasheets Context Search

VFBGA44

BCR10

Untitled

216-ball

SLC NAND endurance 100k

samsung 2GB Nand flash 121 pins

4GB MLC NAND

M59MR032C

S72NS512RE0

IS66WVD2M16DALL

Untitled

Untitled

st MCP

bcr10

M58WR064K

M1012

M39P0R1080E4

CR10

spansion marking date code

S72NS128RD0AHBL

KFM5616Q1A-DEB6

63FBGA

Untitled

M29F800A3BT12