Untitled
Abstract: No abstract text available
Text: STPS2545CT-Y Automotive power Schottky rectifier Datasheet − production data Features A1 • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified
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STPS2545CT-Y
AEC-Q101
O-220AB
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Untitled
Abstract: No abstract text available
Text: STPS2545CT-Y Automotive power Schottky rectifier Datasheet − production data Features • A1 Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified
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STPS2545CT-Y
AEC-Q101
O-220AB
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Untitled
Abstract: No abstract text available
Text: MBR6040CT 60.0Amp Schottky Barrier Rectifier TO-220AB Pb RoHS COMPLIANCE Features Low power loss, high efficiency High current capability, Low forward voltage drop. Plastic material used carries Underwriters Laboratory Classification 94V-0 Qualified as per AEC-Q101
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MBR6040CT
O-220AB
AEC-Q101
260/10S/
MIL-STD-202,
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STPS2545CTY
Abstract: No abstract text available
Text: STPS2545CT-Y Automotive power Schottky rectifier Features • A1 Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low thermal resistance ■ Avalanche capability specified ■ AEC-Q101 qualified K A2 A2 A1 Description
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STPS2545CT-Y
AEC-Q101
O-220AB
STPS2545CTY
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Untitled
Abstract: No abstract text available
Text: VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization:
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VS-HFA30TA60CHN3
AEC-Q101
O-220AB
VS-HFA30TA60CHN3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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FGB3440G2
Abstract: No abstract text available
Text: FGB3440G2_F085 / FGD3440G2_F085 FGP3440G2_F085 EcoSPARK 2 335mJ, 400V, N-Channel Ignition IGBT Features Applications o SCIS Energy = 335mJ at TJ = 25 C Automotive lgnition Coil Driver Circuits Logic Level Gate Drive Coil On Plug Applications Qualified to AEC Q101
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FGB3440G2
FGD3440G2
FGP3440G2
335mJ,
335mJ
O-263AB
O-220AB
O-252AA
ESCIS25
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Untitled
Abstract: No abstract text available
Text: New Product VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization:
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VS-HFA30TA60CHN3
AEC-Q101
O-220AB
O-220AB
VS-HFA30TAtrademarks
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: VS-HFA30TA60CHN3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 2 x 15 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified, meets JESD 201 class 1A whisker test • Material categorization: for definitions of
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VS-HFA30TA60CHN3
AEC-Q101
O-220AB
VS-HFA30TA60CHN3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.006 ID (A) • AEC-Q101 Qualifiedd
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SQP120N06-06
AEC-Q101
O-220AB
O-220
SQP120N06-06-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQP120N10-09 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0095 ID (A) • AEC-Q101 Qualifiedd
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SQP120N10-09
AEC-Q101
O-220
SQP120N10-09-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: BUK951R6-30E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK951R6-30E
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Untitled
Abstract: No abstract text available
Text: BUK954R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK954R8-60E
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Untitled
Abstract: No abstract text available
Text: BUK752R7-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK752R7-60E
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Untitled
Abstract: No abstract text available
Text: SQP120N06-06 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.006 ID (A) • AEC-Q101 Qualifiedd
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SQP120N06-06
AEC-Q101
O-220AB
O-220
SQP120N06-06-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: BUK951R9-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK951R9-40E
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Abstract: No abstract text available
Text: BUK953R5-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK953R5-60E
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Untitled
Abstract: No abstract text available
Text: BUK954R4-80E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK954R4-80E
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Untitled
Abstract: No abstract text available
Text: BUK753R8-80E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK753R8-80E
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Untitled
Abstract: No abstract text available
Text: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd
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SQP60N06-15
AEC-Q101
O-220AB
O-220
SQP60N06-15-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQP120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd
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SQP120N10-3m8
AEC-Q101
O-220
SQP120N10-3m8-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd
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SQP60N06-15
AEC-Q101
O-220AB
O-220
SQP60N06-15-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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Untitled
Abstract: No abstract text available
Text: SQP120N10-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 100 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.0038 ID (A) • AEC-Q101 Qualifiedd
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SQP120N10-3m8
AEC-Q101
O-220
SQP120N10-3m8-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
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BUK953
Abstract: No abstract text available
Text: BUK953R2-40E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK953R2-40E
BUK953
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BUK753
Abstract: BUK753R5-60E
Text: BUK753R5-60E N-channel TrenchMOS standard level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK753R5-60E
BUK753
BUK753R5-60E
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