Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM51400FA-S •General description ■Features ELM51400FA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=30V Id=1.0A Rds(on) < 430mΩ (Vgs=4.5V) Rds(on) < 580mΩ (Vgs=2.5V)
|
Original
|
ELM51400FA-S
ELM51400FA-S
AFN1306
|
PDF
|
ELM51400FA
Abstract: No abstract text available
Text: 单 N 沟道 MOSFET ELM51400FA-S •概要 ■特点 ELM51400FA-S 是 N 沟道低输入电容，低工作电 •Vds=30V 压，低导通电阻的大电流 MOSFET。 · Id=1.0A ·Rds on = 430mΩ (Vgs=4.5V) ·Rds(on) = 580mΩ (Vgs=2.5V) ·Rds(on) = 860mΩ (Vgs=1.8V)
|
Original
|
ELM51400FA-S
AFN1306
ELM51400FA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: シングル N チャンネル MOSFET ELM51400FA-S •概要 ■特長 ELM51400FA-S は低入力容量 低電圧駆動、 低 ・ Vds=30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=1.0A ・ Rds on < 430mΩ (Vgs=4.5V) ・ Rds(on) < 580mΩ (Vgs=2.5V)
|
Original
|
ELM51400FA-S
AFN1306
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM51400FA-S •General description ■Features ELM51400FA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage
|
Original
|
ELM51400FA-S
ELM51400FA-S
AFN1306
|
PDF
|