Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon FEATURE 3 ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K 2 ƽ We declare that the material of product compliance with RoHS requirements.
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Original
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L2SB1197KQLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
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PDF
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ahr transistor
Abstract: L2SB1197KQLT1 L2SB1197KQLT1G L2SB1197KRLT1 L2SB1197KRLT1G sot23 ahq
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197K*LT1 PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB
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Original
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L2SB1197K
L2SD1781K
236AB)
L2SB1197KQLT1
L2SB1197KQLT1G
3000/Tape
L2SB1197KRLT1
L2SB1197KRLT1G
ahr transistor
L2SB1197KQLT1
L2SB1197KQLT1G
L2SB1197KRLT1
L2SB1197KRLT1G
sot23 ahq
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PDF
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ahr transistor
Abstract: L2SB1197KQLT1G L2SB1197KRLT1G L2SB1197K sot23 ahq
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KQLT1G Series PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.
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Original
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L2SB1197KQLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
ahr transistor
L2SB1197KRLT1G
L2SB1197K
sot23 ahq
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQLT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.
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Original
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L2SB1197KQLT1G
S-L2SB1197KQLT1G
L2SD1781K
AEC-Q101
236AB)
3000/Tape
10000/Tape
L2SB1197KQLT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor PNP Silicon L2SB1197KQLT1G Series S-L2SB1197KQ LT1G Series FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 3 ƽEpitaxial planar type. 1 ƽNPN complement: L2SD1781K ƽ We declare that the material of product compliance with RoHS requirements.
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Original
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L2SB1197KQLT1G
S-L2SB1197KQ
L2SD1781K
AEC-Q101
236AB)
3000/Tape
L2SB1197KQLT1G
S-L2SB1197KQLT1G
L2SB1197KQLT3G
S-L2SB1197KQLT3G
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PDF
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ahr 49 transistor
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Low Frequency Transistor L2SB1197KXLT1G PNP Silicon 3 FEATURE ƽHigh current capacity in compact package. IC = í0.8A. 1 ƽEpitaxial planar type. 2 ƽNPN complement: L2SD1781K ƽPb-Free Package is available. SOT– 23 TO–236AB
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Original
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L2SB1197KXLT1G
L2SD1781K
236AB)
L2SB1197KQLT1G
3000/Tape
L2SB1197KQLT3G
10000/Tape
L2SB1197KRLT1G
L2SB1197KRLT3G
ahr 49 transistor
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PDF
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ahr TRANSISTOR smd
Abstract: SMD AHR smd marking AHR MARKING SMD PNP TRANSISTOR ahr TRANSISTOR 2SB1197K hFE CLASSIFICATION Marking
Text: Transistors SMD Type Low Frequency Transistor 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1
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2SB1197K
OT-23
-50mA
-100mA
100MHz
ahr TRANSISTOR smd
SMD AHR
smd marking AHR
MARKING SMD PNP TRANSISTOR
ahr TRANSISTOR
2SB1197K
hFE CLASSIFICATION Marking
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PDF
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2SB1197K
Abstract: AHp MARKING
Text: 2SB1197K SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range
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2SB1197K
OT-23-3L
2SB1197K
-100mA
-50mA
100MHz
AHp MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: LRC LESHAN RADIO COMPANY,LTD. Low Frequency Transistor Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish L2SB1197KRLT1 3 COLLECTOR L2SB1197KQLT1 1 BASE 2 EMITTER 3 FAbsolute maximum ratings Ta = 25_C 1 2 SOT– 23
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L2SB1197KRLT1
L2SB1197KQLT1
L2SB1197KRLT1
L2SB1197KQLT1
L2SB1197K
OT-23
3000/Tape
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PDF
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2SB1197K
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current
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Original
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OT-23-3L
OT-23-3L
2SB1197K
-100mA
-50mA
100MHz
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PDF
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2SB1197K
Abstract: No abstract text available
Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SB1197K TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 200 mW (Tamb=25℃) 1. 02 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -800 mA
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OT-23-3L
OT-23-3L
2SB1197K
-100mA
-50mA
100MHz
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PDF
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2SB1197
Abstract: 2SD1781 ahr sot23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 SOT-23 TRANSISTOR PNP Unit : mm 1. BASE FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. 2. EMITTER 3. COLLECTOR
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Original
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OT-23
2SB1197
OT-23
/-50mA)
2SD1781.
-100mA
-50mA
-50mA,
100MHz
2SB1197
2SD1781
ahr sot23
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PDF
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sot23 ahq
Abstract: sot23 ahr AHp sot23 ahr transistor ahr sot23
Text: 2SB1197 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A. Complements the 2SD1781. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO
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Original
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OT-23
2SB1197
OT-23
/-50mA)
2SD1781.
-100mA
-50mA
-50mA,
100MHz
sot23 ahq
sot23 ahr
AHp sot23
ahr transistor
ahr sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification 2SB1197K SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 -0.5V IC / IB= -0.5A / -50mA . 3 0.4 Low VCE sat .VCE(sat) 1 0.55 PNP silicon transistor +0.1 1.3-0.1 +0.1 2.4-0.1 IC = -0.8A. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1
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Original
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2SB1197K
OT-23
-50mA
-100mA
100MHz
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PDF
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2SB1197
Abstract: ahr TRANSISTOR 2SD1781 top marking AHR ahr sot23
Text: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z Low VCE sat .VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA). IC =-0.8A. Complements the 2SD1781.
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Original
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2SB1197
/-50mA)
2SD1781.
OT-23
-50uA,
-500mA,
-50mA
-100mA
-50mA,
100MHz
2SB1197
ahr TRANSISTOR
2SD1781
top marking AHR
ahr sot23
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PDF
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2SB1197
Abstract: No abstract text available
Text: 2SB1197 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 Features: SOT-23 * High current capacity in compact package. * Epitaxial planar type. * We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS(Ta=25°C) Rating
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Original
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2SB1197
OT-23
OT-23
-500mA,
-50mA
-100mA
-20mA,
100MHz
19-Apr-2011
2SB1197
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PDF
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2SB1197
Abstract: 2SB1197-P 2SB1197-Q 2SB1197-R 2SD1781 E2180
Text: 2SB1197 -0.8 A, -40 V PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Low VCE sat .VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781
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Original
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2SB1197
OT-23
/-50mA)
2SD1781
2SB1197-P
2SB1197-Q
2SB1197-R
-500mA,
-50mA
2SB1197
2SB1197-P
2SB1197-Q
2SB1197-R
2SD1781
E2180
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PDF
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2SB1197
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SB1197 Pb z Small surface mounting type. z Corredtor peak current Max.=1000mA z Suitable for high packing density. z Low voltage(Max.=40v) z High saturation current capability.
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2SB1197
1000mA)
OT-23
BL/SSSTC016
2SB1197
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PDF
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sot23 ahq
Abstract: ahr TRANSISTOR sot23 ahr 2SB1197 ahr sot23
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES 2SB1197 Pb z Small surface mounting type. z Corredtor peak current Max.=1000mA z Suitable for high packing density. z Low voltage(Max.=40v) z High saturation current capability.
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Original
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2SB1197
1000mA)
OT-23
BL/SSSTC016
sot23 ahq
ahr TRANSISTOR
sot23 ahr
2SB1197
ahr sot23
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PDF
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sot23 ahq
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • x PNP Silicon Epitaxial Transistors Small Package
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Original
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2SB1197
2SB1197-P
2SB1197-Q
2SB1197-R
OT-23
sot23 ahq
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PDF
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2sb1197
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • x PNP Silicon Epitaxial Transistors Small Package
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Original
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2SB1197
2SB1197-P
2SB1197-Q
2SB1197-R
OT-23
2sb1197
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1197 2SB1197-P 2SB1197-Q 2SB1197-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • x PNP Silicon Epitaxial Transistors Small Package
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Original
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2SB1197
2SB1197-P
2SB1197-Q
2SB1197-R
OT-23
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SB1197 Features • • • x PNP Silicon Epitaxial Transistors Small Package Mounting:any position ROHS Compliant
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Original
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2SB1197
OT-23
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PDF
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