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    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Mbit 64Kb x16, Bulk Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES


    Original     		PDF M28F102 0020h 0050h M28F102 PLCC44

    PLCC44 pinout

    Abstract: PLCC44 M28F102 A534
    Text: M28F102 1 Mbit 64Kb x16, Bulk Erase Flash Memory DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical


    Original     		PDF M28F102 0020h 0050h M28F102 120ns 150ns AI00629D PLCC44 TSOP40 PLCC44 pinout PLCC44 A534

    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Mb 64K x 16, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max


    Original     		PDF M28F102 100ns 0020h 0050h M28F102 interface100ns 120ns 150ns AI00629D PLCC44 PLCC44

    M28F102

    Abstract: No abstract text available
    Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F102 PLCC44 TSOP40 PLCC44 TSOP40 M28F102 micr11 100ns 120ns

    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F102 PLCC44 TSOP40 M28F102

    M28F102

    Abstract: PLCC44
    Text: M28F102 1 Megabit 64K x 16, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE


    Original     		PDF M28F102 PLCC44 TSOP40 PLCC44 M28F102