M27512
Abstract: 1N914
Text: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
|
Original
|
M27512
200ns
FDIP28W
M27512
1N914
|
PDF
|
M27512
Abstract: No abstract text available
Text: M27512 NMOS 512K 64K x 8 UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
|
Original
|
M27512
200ns
FDIP28W
M27512
AI00766
200ns,
250ns,
300ns,
|
PDF
|
M27512
Abstract: FDIP28W M27512A
Text: M27512 512 Kbit 64Kb x 8 NMOS UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
|
Original
|
M27512
200ns
FDIP28W
M27512
M27512A
200ns,
250ns,
FDIP28W
M27512A
|
PDF
|
M27512
Abstract: 1N914 VA10
Text: M27512 NMOS 512 Kbit 64Kb x 8 UV EPROM NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM 28 ELECTRONIC SIGNATURE
|
Original
|
M27512
200ns
M27512
FDIP28W
1N914
VA10
|
PDF
|
M27512
Abstract: M27512 eprom 1N914 VA10
Text: M27512 NMOS 512 Kbit 64Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 200ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM
|
Original
|
M27512
200ns
M27512
M27512 eprom
1N914
VA10
|
PDF
|
M27512
Abstract: 1N914 VA10
Text: M27512 NMOS 512 Kbit 64Kb x 8 UV EPROM NOT FOR NEW DESIGN • FAST ACCESS TIME: 200ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ and PROGRAM ■ FAST PROGRAMMING ALGORITHM
|
Original
|
M27512
200ns
M27512
1N914
VA10
|
PDF
|
FDIP28Wf
Abstract: m27512
Text: M27512 NMOS 512K 64K x 8 UV EPROM DATA BRIEFING FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
|
Original
|
M27512
200ns
FDIP28W
M27512
A0-A15
AI00766
200ns,
FDIP28Wf
|
PDF
|
M27512
Abstract: 1N914
Text: M27512 NMOS 512K 64K x 8 UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTL COMPATIBLE DURING READ and PROGRAM 28 FAST PROGRAMMING ALGORITHM 1 ELECTRONIC SIGNATURE FDIP28W (F) PROGRAMMING VOLTAGE: 12V
|
Original
|
M27512
200ns
FDIP28W
M27512
1N914
|
PDF
|
M27512 eprom
Abstract: No abstract text available
Text: 5 7 . SGS-THOMSON M27512 •LI NMOS 512K 64K x 8 UV EPROM FAST ACCESS TI M E : 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 40mA max TTLCOMPATIBLE DURING READ and PROGRAM FAST PROGRAMMING ALGORITHM ELECTRONIC SIGNATURE PROGRAMMING VOLTAGE: 12V
|
OCR Scan
|
M27512
200ns
M27512
M27512 eprom
|
PDF
|
Untitled
Abstract: No abstract text available
Text: rZ 7 SGS’THOMSON * 7 i, M27512 RfflD [i]®ilLi TO®iD gS NMOS 512K (64K x 8 UV EPROM • FAST ACCESS TIME: 200ns ■ EXTENDED TEMPERATURE RANGE ■ SINGLE 5V SUPPLY VOLTAGE ■ LOW STANDBY CURRENT: 40mA max ■ TTL COMPATIBLE DURING READ aid PROGRAM ■ FAST PROGRAMMING ALGORITHM
|
OCR Scan
|
M27512
200ns
M27512
FDIP28W
7T2T237
Q0bfl47fl
|
PDF
|