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    M28W231

    Abstract: No abstract text available
    Text: M28W231 2 Mbit 256Kb x8, Boot Block Low Voltage Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware


    Original     		PDF M28W231 256Kb 100ns TSOP40 M28W231 AI02004B 120ns 150ns

    wp 39

    Abstract: AN933 M28F211 M28F410 M28F411 M28W231
    Text: AN933 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F2xx and M28F4xx families has been enhanced by the introduction of a Write Protect function using the WP pin.


    Original     		PDF AN933 M28F2xx M28F4xx T6-U20) wp 39 AN933 M28F211 M28F410 M28F411 M28W231

    1N914

    Abstract: M28W231
    Text: M28W231 2 Mbit 256Kb x8, Block Erase Low Voltage Flash Memory PRELIMINARY DATA 2.7V to 3.6V SUPPLY VOLTAGE 12V ± 5% PROGRAMMING VOLTAGE FAST ACCESS TIME: 100ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware


    Original     		PDF M28W231 256Kb 100ns M28W231 1N914