rf power amplifier circuit diagram with pcb layout
Abstract: UMTS2100
Text: RF3806 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Class AB Operation for DCS, PCS, and • GaAs HBT Linear Amplifier • Power Amplifier Stage for Commercial UMTS Wireless Infrastructure Product Description The RF3806 is a GaAs power amplifier, specifically
|
Original
|
PDF
|
RF3806
RF3806
UMTS2100
rf power amplifier circuit diagram with pcb layout
|
MARKING HBT
Abstract: 0610-12
Text: RF3806 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • Class AB Operation for DCS, PCS, and • GaAs HBT Linear Amplifier • Power Amplifier Stage for Commercial UMTS Wireless Infrastructure Product Description The RF3806 is a GaAs power amplifier, specifically
|
Original
|
PDF
|
RF3806
RF3806
UMTS2100
MARKING HBT
0610-12
|
A00025
Abstract: 390R-5
Text: RF3805 GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • GaAs HBT Linear Amplifier • Class AB Operation for GSM/EDGE/CDMA2000 • Power Amplifier Stage for Commercial Wireless Transmitter Applications Infrastructure
|
Original
|
PDF
|
RF3805
GSM/EDGE/CDMA2000
RF3805
EIA-481.
A00025
390R-5
|
rf3800pcba-416
Abstract: RF3800 RF3800TR7 banana jack footprint
Text: RF3800 RF3800GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features 6W Output Power High Linearity 45% Power-Added Efficiency
|
Original
|
PDF
|
RF3800
RF3800GaAs
150MHz
960MHz
450MHz
850MHz
RF3800
EIA-481.
DS070130
rf3800pcba-416
RF3800TR7
banana jack footprint
|
smd-transistor DATA BOOK
Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
Text: APPLICATION NOTE 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz AN98018 Philips Semiconductors 4 W Linear Class-AB amplifier with the BLV2042 for 1930 −1990 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER DESCRIPTION
|
Original
|
PDF
|
BLV2042
AN98018
BLV2042.
199lding
SCA57
smd-transistor DATA BOOK
SMD Transistor
rt/duroid 6006
TRANSISTOR SMD catalog
transistor SMD DK
Philips 2222-581
smd-transistor -1.am
Duroid 6006
SMD Transistor 6f
smd transistor l6
|
RFHA1003S2
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS121114
RFHA1003S2
|
"class AB Linear" 50mhz
Abstract: RFHA1000 Transistor J116
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1000
50MHz
1000MHz,
RFHA1000
1000MHz
DS120418
"class AB Linear" 50mhz
Transistor J116
|
RFHA1003SQ
Abstract: 30MHz to 512MHz
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
RFHA1003SQ
30MHz to 512MHz
|
Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1003
30MHz
512MHz,
512MHz
DS120216
|
Untitled
Abstract: No abstract text available
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1006
225MHz
1215MHz,
1215MHz
DS120418
|
Untitled
Abstract: No abstract text available
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1000
50MHz
1000MHz,
1000MHz
DS120418
|
RFHA
Abstract: LQG11A47NJ00
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1006
225MHz
1215MHz,
RFHA1006
1215MHz
DS121114
RFHA
LQG11A47NJ00
|
Untitled
Abstract: No abstract text available
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1000
50MHz
1000MHz,
RFHA1000
1000MHz
DS120216
|
Untitled
Abstract: No abstract text available
Text: RF3806 RF3806GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN h GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features 4W Output Power High Linearity 1500MHz to 2200MHz Operation
|
Original
|
PDF
|
RF3806
RF3806GaAs
1500MHz
2200MHz
RF3806
DS070205
|
|
|
rf3826
Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
ERJ-3GEYJ821
ERJ-3GEYJ391
transistor 1800MHz
|
RFHA1000
Abstract: No abstract text available
Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1000
50MHz
1000MHz,
RFHA1000
1000MHz
DS121114
|
Untitled
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1003
30MHz
512MHz,
RFHA1003
512MHz
DS120216
|
404j
Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
404j
transistor 1800MHz
100A0R9BT150X
|
W1002C
Abstract: cdma Booster schematic umts repeater circuit PCS1900 RF3806 RF3806PCK-415 UMTS2100 IPC-SM-782 6v 100 ohm role cdma booster circuit diagram
Text: RF3806 RF3806GaAs HBT Pre-Driver Amplifier GaAs HBT PRE-DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: AlN h GENERAL PURPOSE AMPLIFIERS LNAs, HPAs, LINEAR AMPS 3 Features 4W Output Power High Linearity 1500MHz to 2200MHz Operation
|
Original
|
PDF
|
RF3806
RF3806GaAs
1500MHz
2200MHz
RF3806
DS070509
W1002C
cdma Booster schematic
umts repeater circuit
PCS1900
RF3806PCK-415
UMTS2100
IPC-SM-782
6v 100 ohm role
cdma booster circuit diagram
|
RFHA1006
Abstract: 0906-4K LQG11A47NJ00
Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1006
225MHz
1215MHz,
RFHA1006
1215MHz
DS120418
0906-4K
LQG11A47NJ00
|
EC 401 TRANSISTOR
Abstract: Gan hemt transistor RFMD transistor 1800MHz
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
EC 401 TRANSISTOR
Gan hemt transistor RFMD
transistor 1800MHz
|
transistor 1800MHz
Abstract: No abstract text available
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3826
30MHz
2500MHz,
2500MHz
2500MHz)
transistor 1800MHz
|
transistor 1800MHz
Abstract: No abstract text available
Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RF3826
30MHz
2500MHz,
RF3826
2500MHz
2500MHz)
transistor 1800MHz
|
rfha1003
Abstract: No abstract text available
Text: RFHA1003 RFHA1003 30 MHz to 512MHz, 9 W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology
|
Original
|
PDF
|
RFHA1003
512MHz,
RFHA1003
30MHz
512MHz
DS120102
|
