power transistor audio amplifier 500 watts
Abstract: 4CV100000 Eimac amplifier 200 watt audio amplifier 4CV100 710b high power 500 watts audio amplifier push pull class AB RF linear RF push pull power amplifier
Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 4CV100,000E The Eimac 4CV100,000E is recommended for use as a Class C RF amplifier, a class AB RF amplifier, a Class AB push-pull audio amplifier or modulator, as well as a high level modulated or pulse duration modulated amplifier.
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4CV100
ttings\carolyn\Desktop\Objects\4cv100000e
power transistor audio amplifier 500 watts
4CV100000
Eimac
amplifier
200 watt audio amplifier
710b
high power 500 watts audio amplifier
push pull class AB RF linear
RF push pull power amplifier
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RF106-12
Abstract: No abstract text available
Text: RF106 900 MHz ISM Band Power Amplifier Data Sheet 100981B August 2002 ii Conexant 100981B 08/26/02 RF106 900 MHz ISM Band Power Amplifier The RF106 is a three-stage class AB-type RF power amplifier for 900 MHz Industrial, Distinguishing Features Scientific, and Medical ISM band applications. It delivers output power proportional ! Class AB-type RF power amplifier
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RF106
100981B
RF106
RF106-12
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siceront kf
Abstract: transistor motorola 351 motorola rf Power Transistor IrL 1540 N 1307 TRANSISTOR equivalent siceront kf 1201 429C MRFA2602 amplifier application circuit motorola 100 w amplifier
Text: MOTOROLA Order this document by MRFA2602/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2602 Broadband RF Power Amplifier for TV Transmitter The MRFA2602 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip
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MRFA2602/D
MRFA2602
MRFA2602
MRFA2602/D*
siceront kf
transistor motorola 351
motorola rf Power Transistor
IrL 1540 N
1307 TRANSISTOR equivalent
siceront kf 1201
429C
amplifier application circuit
motorola 100 w amplifier
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429C
Abstract: MRFA2602 TRANSISTOR C 3205 tv transmitter amplifier circuit
Text: MOTOROLA Order this document by MRFA2602/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRFA2602 Broadband RF Power Amplifier for TV Transmitter The MRFA2602 is a solid state class A amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates microstrip
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MRFA2602/D
MRFA2602
MRFA2602
MRFA2602/D*
429C
TRANSISTOR C 3205
tv transmitter amplifier circuit
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T6s MARKING
Abstract: No abstract text available
Text: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.
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PG2253T6S
PG2253T6S
16-pin
PG10761EJ01V0DS
T6s MARKING
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Untitled
Abstract: No abstract text available
Text: GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR BluetoothTM CLASS 1 DESCRIPTION The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.
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PG2253T6S
PG2253T6S
16-pin
PG10761EJ01V0DS
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MRF896
Abstract: 1N4001 Motorola
Text: MOTOROLA Order this document by MRF896/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF896 Designed for 24 Volt UHF large–signal, common emitter, Class AB and Class A linear amplifier applications in industrial and commercial FM/AM equipment
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MRF896/D
MRF896
MRF896/D*
MRF896
1N4001 Motorola
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3cx20000a7
Abstract: 3CX2000 500 watts power amplifier 500 watts amplifier "Power Triode" "RF Amplifier" 211 power Triode amp classes c 3CX20 operation of class c amplifier
Text: Eimac Power Grid Tube - Quick Reference Data Sheet Page 1 of 1 3CX20,000A7 The Eimac 3CX20,000A7 is a high-mu power triode intended for use as a zero bias Class B RF amplifier or Class C power amplifier or oscillator. Class B operation with zero grid bias offers circuit simplicity. In
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3CX20
000A7
000A7
ttings\carolyn\Desktop\Objects\3cx20000a7
3cx20000a7
3CX2000
500 watts power amplifier
500 watts amplifier
"Power Triode"
"RF Amplifier"
211 power Triode
amp classes c
operation of class c amplifier
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CAPACITOR chip murata mtbf
Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15030/D
MRF15030
MRF15030/D*
CAPACITOR chip murata mtbf
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
rohm mtbf
CAPACITOR chip mtbf
GX-0300-55-22
IrL 1540 N
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
BD136
RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ
transistor bd136
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15090/D
MRF15090
DEVICEMRF15090/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15030/D
MRF15030
MRF15030/D*
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CAPACITOR chip murata mtbf
Abstract: MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15090/D
MRF15090
DEVICEMRF15090/D
CAPACITOR chip murata mtbf
MUR5120
irl 1520
MUR5120T3
IrL 1540 N
462 variable capacitor
mallory capacitor 1500 uF
CAPACITOR chip mtbf
MRF15090
rohm mtbf
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Untitled
Abstract: No abstract text available
Text: 19-4076; Rev 0; 7/08 KIT ATION EVALU E L B A AVAIL Low RF Susceptibility, Mono Audio Subsystem with DirectDrive Headphone Amplifier Features The MAX9877 combines a high-efficiency Class D audio power amplifier with a stereo Class AB capacitorless DirectDrive headphone amplifier. Maxim’s 3rd
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MAX9877
725mW
W202A2
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Untitled
Abstract: No abstract text available
Text: 1 9 - 4 076 ; Rev 0; 3/08 Low RF Susceptibility, Mono Audio Subsystem with DirectDrive Headphone Amplifier The MAX9877 combines a high-efficiency Class D audio power amplifier with a stereo Class AB capacitorless DirectDrive headphone amplifier. Maxim’s 3rd
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MAX9877
725mW
MAX9877
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CAPACITOR chip murata mtbf
Abstract: BD136
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 22MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15090/D
MRF15090
MRF15090
MRF15090/D
CAPACITOR chip murata mtbf
BD136
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BD136
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15090/D
MRF15090
MRF15090
DEVICEMRF15090/D
BD136
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CAPACITOR chip murata mtbf
Abstract: IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15090/D
MRF15090
MRF15090/D*
CAPACITOR chip murata mtbf
IrL 1540 N
CAPACITOR chip mtbf
transistor bd135
transistor motorola 351
BD135
BD136
MJD47
MRF15090
MUR5120T3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs HJ-FET INTEGRATED CIRCUIT PG2253T6S RF FRONT-END IC FOR Bluetooth TM CLASS 1 DESCRIPTION The μPG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a power amplifier with low-pass filter. And this device has no RF matching parts.
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PG2253T6S
PG2253T6S
16-pin
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MRFA2604
Abstract: data sw 3205 transistor cq 529 class c tuned amplifier
Text: MOTOROLA O rder this docum ent by MRFA2604/D SEMICONDUCTOR TECHNICAL DATA MRFA2604 The RF Line Broadband R.F. Array for T V TVansmitter 230 W PEAK SYNC. 4 7 0 -8 6 0 MHz CLASS AB RF POWER AMPLIFIER The MRFA2604 is a solid state class AB amplifier specifically designed for TV
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MRFA2604/D
MRFA2604
MRFA2604
FA2604
2PHX3437
data sw 3205
transistor cq 529
class c tuned amplifier
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF240/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF240 . . . designed for 13.6 volt VHF large-signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
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MRF240/D
MRF240
MRF240
40-JZi
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TO-217
Abstract: No abstract text available
Text: 2N6093 NPN SILICON RF POWER TRANSISTOR YLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. VMBOL < m o 0.2D5 0.325
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2N6093
O-217
TO-217
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Untitled
Abstract: No abstract text available
Text: m 2N6093 \ \ NPN SILICON RF POWER TRANSISTOR PACKAGE S YLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. SYM BOL
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2N6093
O-217
2N6093
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transistor motorola 114-8
Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8
Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF861/D
2PHX33727Q-0
transistor motorola 114-8
MRF861
2n2222 npn transistor
motorola s 114-8
2N2222 SOA
power transistor 2n2222
motorola 114-8
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MRF860
Abstract: 2n2222 npn transistor 2N2222 rf
Text: Order this data sheet by MRF860/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M RF860 NPN Silicon RF Power lYansistor Motorola Preferred Device CLASS A 800-960 MHz 13.7 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF860/D
2PHX33728Q-0
MRF860
2n2222 npn transistor
2N2222 rf
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