heat sink design guide, IGBT
Abstract: air cooled heatsink AN4505 AN4505-5 heatsink EM HEATSINK PROFILE Dynex Semiconductor
Text: AN4505 Heatsink Issues For IGBT Modules Application Note AN4505-5.2 April 2007 LN 25345 The maximum permissible junction temperature Tjmax of an IGBT is fixed and a suitable heatsink must be selected to keep the junction temperature (Tj) below this maximum.
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AN4505
AN4505-5
heat sink design guide, IGBT
air cooled heatsink
AN4505
heatsink
EM HEATSINK PROFILE
Dynex Semiconductor
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PDF
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RHODORSIL
Abstract: unial BICC BX13 AN4505 AN4505-5 RHODORSIL COMPOUND 5 oil bicc
Text: AN4505 Application Note AN4505 Heatsink Issues For IGBT Modules Application Note Replaces March 2001 version, AN4505-5.0 AN4505-5.1 July 2002 The maximum permissible junction temperature Tjmax of an IGBT is fixed and a suitable heatsink must be selected to keep
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AN4505
AN4505
AN4505-5
RHODORSIL
unial
BICC
BX13
RHODORSIL COMPOUND 5
oil bicc
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
Tag 225-600
IGBT cross-reference
SCR GTO
fast diode 3000V
tag 200-600
522.500. 5 x 20 mm
HVDC plus
scr phase control battery charger
esm 30 450 v
GTO thyristor Application notes
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GP800
Abstract: AN4508 AN4502 AN4503 AN4505 GP800DCS18 DS5221-4 dc chopper circuit application
Text: GP800DCS18 GP800DCS18 Chopper Switch IGBT Module Replaces November 2000 version, DS5221-4.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
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GP800DCS18
DS5221-4
DS5221-5
GP800
AN4508
AN4502
AN4503
AN4505
GP800DCS18
dc chopper circuit application
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GP801DCM18
Abstract: AN4502 AN4503 AN4505 AN4506
Text: GP801DCM18 GP801DCM18 Hi-Reliability Chopper Switch Low VCE SAT IGBT Module DS5365-3.0 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Module ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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GP801DCM18
DS5365-3
GP801DCM18
AN4502
AN4503
AN4505
AN4506
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AN4502
Abstract: AN4503 GP401LSS18 DSA0018823 ups sine wave inverter circuit diagram
Text: GP401LSS18 GP401LSS18 Powerline N-Channel Single Switch Low Loss IGBT Module Preliminary Information DS5288-1.3 January 2000 The GP401LSS18 is a single switch 1800V, robust n channel enhancement mode insulated gate bipolar transistor IGBT module. Designed for low power loss, the
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GP401LSS18
DS5288-1
GP401LSS18
AN4502
AN4503
DSA0018823
ups sine wave inverter circuit diagram
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AN4502
Abstract: AN4503 AN4505 GP2401ESM18 3,3 kw high frequency transistor module
Text: GP2401ESM18 GP2401ESM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module Replaces February 2000 version, DS5345-1.0 FEATURES • Low VCE(SAT) ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5345-2.4 January 2001
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GP2401ESM18
DS5345-1
DS5345-2
AN4502
AN4503
AN4505
GP2401ESM18
3,3 kw high frequency transistor module
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AN4502
Abstract: AN4503 AN4505 AN4506 GP800DCM18
Text: GP800DCM18 GP800DCM18 Hi-Reliability Chopper Switch IGBT Module DS5363-3.0 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
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GP800DCM18
DS5363-3
GP800DCM18
an1800V,
AN4502
AN4503
AN4505
AN4506
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AN4502
Abstract: AN4503 GP200MKS12 GP200MLS12 IGBT 200A 1200V application induction heating DIODE 10V 10mA AN5190
Text: GP200MLK12 GP200MKS12 IGBT Chopper Module Preliminary Information DS5448-1.2 April 2001 FEATURES • Internally Configured With Upper Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS
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GP200MLK12
GP200MKS12
DS5448-1
AN4502
AN4503
GP200MKS12
GP200MLS12
IGBT 200A 1200V application induction heating
DIODE 10V 10mA
AN5190
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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AN4502
Abstract: AN4503 AN4505 AN4506 GP2400ESM18
Text: GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates ■ 2400A Per Module KEY PARAMETERS VCES typ VCE(sat)
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GP2400ESM18
DS5406-1
GP2400ESM18
AN4502
AN4503
AN4505
AN4506
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AN4502
Abstract: DS5358-2 AN4503 AN4505 AN4506 GP800NSS33 an5167 440nF DS-5358
Text: GP800NSS33 GP800NSS33 Single Switch IGBT Module Preliminary Information Replaces February 2000 version, DS5358-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate with AL2O3 Substrate ■ Low Inductance Internal Construction DS5358-2.1 March 2001
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GP800NSS33
DS5358-2
GP800NSS33
AN4502
AN4503
AN4505
AN4506
an5167
440nF
DS-5358
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DCR370T
Abstract: DCR370T18 DCR1560F26 DCR1560F drd2960y40 alsic 105 DCR1710F18 DCR650G34 DCR2760V DRD850D34
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches
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4500Vee
DS5766-4.
DCR370T
DCR370T18
DCR1560F26
DCR1560F
drd2960y40
alsic 105
DCR1710F18
DCR650G34
DCR2760V
DRD850D34
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DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
K1457
Tag 225-600
dim1200fss12
thyratron
IGBT cross-reference
DCR890F
DSF110
igbt types 6000v
DIM800DCS12-A
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K1p TRANSISTOR
Abstract: AN4502 AN4503 AN4505 GP1600FSM18
Text: GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 FEATURES • High Thermal Cycling Capability ■ 1600A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5361-2.3 January 2001
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GP1600FSM18
DS5361-1
DS5361-2
GP1600FSM18
K1p TRANSISTOR
AN4502
AN4503
AN4505
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AN4502
Abstract: AN4503 AN4505 AN4506 GP400DDS18
Text: GP400DDS18 GP400DDS18 Dual Switch IGBT Module Preliminary Information DS5359-2.0 January 2001 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS VCES typ VCE(sat) (max) IC (max) IC(PK)
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GP400DDS18
DS5359-2
GP400DDS18
AN4502
AN4503
AN4505
AN4506
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AN4505
Abstract: GP800DDM18 AN4502 AN4503 12V DC sine wave inverters circuit diagram
Text: GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates
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GP800DDM18
DS5364-2
DS5364-3
3300y
AN4505
GP800DDM18
AN4502
AN4503
12V DC sine wave inverters circuit diagram
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AN4502
Abstract: AN4503 AN4505 GP800FSS18
Text: GP800FSS18 GP800FSS18 Singles Switch IGBT Module Replaces January 2000 version, DS5261-2.0 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate With Al2O3 Substrate ■ Low Inductance Internal Construction ■ Full 1800V Rating ■ 800A Per Module
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GP800FSS18
DS5261-2
DS5261-3
AN4502
AN4503
AN4505
GP800FSS18
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BJT 2222
Abstract: npn bjt 2N2222 BJT 2N2222 datasheet bjt 2n2222 driver circuit Si321x 2N2222 bjt IBJT W6 13A Diode PC40EF12 IRLL014N equivalent
Text: AN45 DESIGN GUIDE Si3210/15/16 DC-DC CONVERTER FOR THE Introduction The ProSLIC from Silicon Laboratories integrates a complete analog telephone interface into one low-voltage CMOS device and offers extensive software programmability to meet many global telephony
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Si3210/15/16
Si321x
BJT 2222
npn bjt 2N2222
BJT 2N2222 datasheet
bjt 2n2222 driver circuit
2N2222 bjt
IBJT
W6 13A Diode
PC40EF12
IRLL014N equivalent
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DS5402-1
Abstract: AN4502 AN4503 AN4505 AN4506 GP800FSM18
Text: GP800FSM18 GP800FSM18 Hi-Reliability Single Switch IGBT Module DS5402-1.1 January 2001 FEATURES • High Thermal Cycling Capability ■ 800A Per Module ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat)
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GP800FSM18
DS5402-1
GP800FSM18
AN4502
AN4503
AN4505
AN4506
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AN4502
Abstract: AN4503 AN4505 GP1601FSS18 DS5248-4
Text: GP1601FSS18 GP1601FSS18 Single Switch Low VCE SAT IGBT Module Replaces January 2000 version, DS5248-3.0 FEATURES • Low VCE(SAT) ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction ■ 1600A Per module DS5248-4.2 January 2001
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GP1601FSS18
DS5248-3
DS5248-4
AN4502
AN4503
AN4505
GP1601FSS18
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AN5190
Abstract: AN4502 GP200MHB12S GP200MHS12 AN4503 AN4508
Text: GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 FEATURES • Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction DS5296-1.5 November 2000 KEY PARAMETERS VCES typ
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GP200MHS12
GP200MHB12S
DS4339-5
DS5296-1
GP200MHS12
AN5190
AN4502
AN4503
AN4508
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DS5401-1
Abstract: basic single phase ac motor reverse forward AN4502 AN4503 AN4505 AN4506 GP801FSM18 DS5401
Text: GP801FSM18 GP801FSM18 Hi-Reliability Single Switch Low VCE SAT IGBT Module DS5401-1.1 January 2001 FEATURES • Low VCE(SAT) ■ 800A Per Switch ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS
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GP801FSM18
DS5401-1
GP801FSM18
basic single phase ac motor reverse forward
AN4502
AN4503
AN4505
AN4506
DS5401
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BX13
Abstract: copper bus bar torque RHODORSIL COMPOUND 5 busbar bolt torque value oil bicc RHODORSIL COMPOUND 7
Text: device clam ping and m odule m ounting D isc D evice C la m p in g R e c o m m e n d a tio n s The Forward Voltage Drop and Thermal Resistance of a disc hockey puck semiconductor is affected by the clamping force that is applied to the device. This is because, unlike stud type
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130x140mm
190x140mm
AN4505.
BX13
copper bus bar torque
RHODORSIL COMPOUND 5
busbar bolt torque value
oil bicc
RHODORSIL COMPOUND 7
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