AOD408 TRANSISTOR Search Results

AOD408 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

AOD408 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AOD408 Abstract: aoD408 transistor L082 Transistor AOD408 Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free	Original	AOD408 AOD408L O-252 aoD408 transistor L082 Transistor AOD408	PDF
D408 Abstract: D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408 AOD408L Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).	Original	AOD408 AOD408 AOD408L O-252 PD-00085 D408 D408 transistor d408 be transistor d408 diode d408 TRANSISTOR aoD408	PDF
AOD408 Abstract: L082 aoD408 transistor AOD408L Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pbfree (meets ROHS & Sony 259 specifications).	Original	AOD408 AOD408 AOD408L O-252 L082 aoD408 transistor	PDF
AOD408 Abstract: No abstract text available Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS &	Original	AOD408 AOD408 O-252	PDF
Untitled Abstract: No abstract text available Text: AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS ON and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AOD408 is Pb-free (meets ROHS &	Original	AOD408 AOD408 O-252	PDF
Untitled Abstract: No abstract text available Text: Rev 2: Sept 2004 AOD408, AOD408L Green Product N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM	Original	AOD408, AOD408L AOD408 O-252	PDF