Untitled
Abstract: No abstract text available
Text: PhotodiodeSForhiGh-PerFormAnceAPPlicAtionS Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD
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O-C30737PH
C30737LH
C30737
C30724
Standard-90
C30737PH-500-90
C30737LH-500-90
C30737LH-500-92
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smd t1A
Abstract: t1A 13
Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD
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O-C30737PH
C30737LH
C30737
C30724
C3072490
C30737PH-500-90
C30737LH-500-90
C30737LH-500-92
C30724EH
smd t1A
t1A 13
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S13081
Abstract: APD Arrays
Text: Si APD, MPPC CHAPTER 03 1 Si APD 1-1 Features 1-2 Principle of avalanche multiplication 1-3 Dark current 1-4 Gain vs. reverse voltage characteristics 1-5 Noise characteristics 1-6 Spectral response 1-7 Response characteristics 1-8 Multi-element type 1-9 Connection to peripheral circuits
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org/abs/1003
6071v2
S13081
APD Arrays
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Untitled
Abstract: No abstract text available
Text: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain
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D-82211
KAPD0001E05
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PerkinElmer Avalanche Photodiode
Abstract: No abstract text available
Text: Features and Benefits Introduction The short wavelength enhanced silicon avalanche photodiode APD by PerkinElmer (Model C30739ECERH) is designed for low light level applications covering the spectral range from less than 400 nm to greater than 700 nm. Benefits
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C30739ECERH)
DTS0108P
PerkinElmer Avalanche Photodiode
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Hermetic Ceramic Packaged Silicon PIN Diode Devices Applications • Switches Attenuators Features Established PIN diode process Low capacitance designs Voltage ratings to 200 V Tight control of I layer base width
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APD0505
APD1520
203250B
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AN92F
Abstract: CTX-02-16004 VICTOREEN model 500 tektronix 454a jim Williams ZTN4424 2n2369 avalanche datasheet of CMOS IC 74c90 P6046 11A33
Text: Application Note 92 November 2002 Bias Voltage and Current Sense Circuits for Avalanche Photodiodes Feeding and Reading the APD Jim Williams, Linear Technology Corporation INTRODUCTION Avalanche photodiodes APDs are widely utilized in laser based fiberoptic systems to convert optical data into
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AN92-31
AN92-32
an92f
CTX-02-16004
VICTOREEN model 500
tektronix 454a
jim Williams
ZTN4424
2n2369 avalanche
datasheet of CMOS IC 74c90
P6046
11A33
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APD0810-203
Abstract: APD1510 APD0510-210
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches • Attenuators Features • Established Skyworks PIN diode process • Low capacitance designs to 0.05 pF • Voltage ratings to 200 V • Chip size < 15 mils square
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APD0505-000
200075M
APD0810-203
APD1510
APD0510-210
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075N
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075O
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APD0805-000
Abstract: S1570
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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APD0505-000
200075K
APD0805-000
S1570
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APD0520-000
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches • Attenuators Features • Established Skyworks PIN diode process • Low capacitance designs to 0.05 pF • Voltage ratings to 200 V • Chip size < 15 mils square
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APD0505-000
200075I
APD0520-000
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lidar apd model
Abstract: APD, laser, range, finder photodiode pin alpha particles APD bias gain C30902S geiger apd InGaAs apd photodiode Photodiode apd high sensitivity germanium diode equivalent PerkinElmer Avalanche Photodiode
Text: !"#$%& Avalanche Photodiodes: A User's Guide Abstract Avalanche photodiode detectors have and will continue to be used in many diverse applications such as laser range finders and photon correlation studies. This paper discusses APD structures, critical performance parameters and the excess noise factor.
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ED-13,
ED-0017/03/8,
C30902E/S,
C30921
lidar apd model
APD, laser, range, finder
photodiode pin alpha particles
APD bias gain
C30902S
geiger apd
InGaAs apd photodiode
Photodiode apd high sensitivity
germanium diode equivalent
PerkinElmer Avalanche Photodiode
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APD1520-000
Abstract: APD2220-000 APD0505-000 APD0505-240 APD0510-000 APD0520-000 APD0805-000 APD0810-000 APD1510-000 APD1510-219
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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APD0505
200075L
APD1520-000
APD2220-000
APD0505-000
APD0505-240
APD0510-000
APD0520-000
APD0805-000
APD0810-000
APD1510-000
APD1510-219
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Untitled
Abstract: No abstract text available
Text: DATA SHEET APD Series: Silicon PIN Diodes, Packaged and Bondable Chips Applications • Switches Attenuators Features Established Skyworks PIN diode process Low capacitance designs to 0.05 pF Voltage ratings to 200 V Chip size < 15 mils square
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SQ04-0074.
200075P
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PM 8038
Abstract: e/10Gb CDR
Text: TS-S10D166C Preliminary October, 2011 40Gb/s CFP Optical Transceiver Module SCF0400E4 Series 40Gbps 40km, 4-lane x 10Gb/s CWDM, DFB-LD, APD-PD Features 4-lane x 10Gb/s CWDM Optical Interface High quality and reliability optical sub-assemblies
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TS-S10D166C
40Gb/s
SCF0400E4
40Gbps
10Gb/s
1310nm
1331nm
IEEE802
PM 8038
e/10Gb CDR
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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Untitled
Abstract: No abstract text available
Text: Detectors Silicon Geiger Mode Avalanche Photodiode Description The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used
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SAP500-Series
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Untitled
Abstract: No abstract text available
Text: SPS-43-48H-HP-TDE Features • Burst receive GPON OLT transceiver • Small Form Factor Pluggable, Simple SC Connector • “Fast Signal Detect” feature reduces ranging overhead • Simplified OLT “reset” timing • 1490 nm DFB Tx with isolator • 1310 nm APD Rx
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SPS-43-48H-HP-TDE
Tx/1244
DS-7078
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Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection C30739ECERH Series Short Wavelength Enhanced Silicon Avalanche Photodiode Key Features The C30739ECERH large area silicon avalanche photodiode APD is intended for use in a wide variety of broadband low light level applications covering the spectral range from below 400 to over 700 nm.
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C30739ECERH
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Infrared detectors
Abstract: dark detector application ,uses and working
Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use
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Untitled
Abstract: No abstract text available
Text: Silicon Geiger Mode Avalanche Photodiode DESCRIPTION The SAP500-Series is based on a “reach-through” structure for excellent quantum efficiency, extremely low noise and bulk dark current and high gain. They are intended for ultra-low light level applications. This APD can be used in
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SAP500-Series
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avalanche photodiode 1550nm sensitivity
Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC
Text: InGaAs AVALANCHE PHOTODIODE FPD15W51RT DESCRIPTION The FPD15W51RT is a wide bandwidth and high sensitivity InGaAs ava lanche photodiode APD mounted on a low parasitic ceramic carrier designed for use in optical transmission systems operating at a giga-bit-rate,
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FPD15W51RT
FPD15W51RT
1550nm.
000SD3D
371H75Î
avalanche photodiode 1550nm sensitivity
InGaAs Photodiode 1550nm
photodiode sensitivity 1550nm 2
multiplication IC
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Fujitsu avalanche photodiode
Abstract: No abstract text available
Text: inGaAs AVALANCHE PHOTODIODE FPD13W51RT DESCRIPTION The FPD13W51RT is a wide bandwidth and high sensitivity InGaAs ava lanche photodiode APD mounted on a low parasitic ceramic carrier designed fo r use in optical transmission systems operating at a giga-bit-rate,
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FPD13W51RT
FPD13W51RT
50/xrn.
1300nm.
PH0T00H
Fujitsu avalanche photodiode
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