XC2018
Abstract: 80196 internal architecture diagram 80196 programs IMS2000 XILINX xc2018 XC6200 xilinx 8051 XC2000 memory space of 80196 XC3020
Text: ISP Applications Applications of In-System Reconfigurable Logic Reconfigurable Logic Applications — 1 Copyright 1995 by Xilinx, Inc. All rights reserved. All trademarks are the property of the respective owners. Agenda Mechanics of reconfigurability Applications of In-System Programmable ISP logic
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2SK1961
Abstract: No abstract text available
Text: Ordering number:ENN4502 N-Channel Junction Silicon FET 2SK1961 High-Frequency Low-Noise Amplifier Applications Applications Package Dimensions • High-frequency low-noise amplifier applications. unit:mm 2019B Features [2SK1961] 5.0 4.0 4.0 5.0 · Adoption of FBET process.
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ENN4502
2SK1961
2019B
2SK1961]
SC-43
2SK1961
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diesel solenoid
Abstract: BUK6211-75C BUK763R6-40C Control of Starter-generator kia278r12 starter/generator BUK762R0-40C BUK6510-75C "high efficiency alternator" BUK761R9-30C
Text: Leading-edge Automotive Power MOSFETs Next Generation MOSFETs for a wide range of Automotive Applications Low on-resistance MOSFETS for a wide range of automotive applications Intermediate level gate drive N-channel enhancement mode Field-Effect Transistors FETs in industry-standard packages using
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OT226
OT669
diesel solenoid
BUK6211-75C
BUK763R6-40C
Control of Starter-generator
kia278r12
starter/generator
BUK762R0-40C
BUK6510-75C
"high efficiency alternator"
BUK761R9-30C
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05530
Abstract: DM marking code marking code 12A
Text: PD - 96139A IRFH7923PbF HEXFET Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS on max Qg 8.7m @VGS = 10V 8.7nC :
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6139A
IRFH7923PbF
05530
DM marking code
marking code 12A
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Untitled
Abstract: No abstract text available
Text: IRFH7921PbF HEXFET Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS on max Qg 8.5mΩ@VGS = 10V 9.3nC Benefits l l
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IRFH7921PbF
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22B3
Abstract: diode 22b3 Diode Ds 135. 12A
Text: PD - 96139 IRFH7923PbF HEXFET Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS on max Qg 8.7m @VGS = 10V 8.7nC : Benefits
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IRFH7923PbF
22B3
diode 22b3
Diode Ds 135. 12A
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EPC8004
Abstract: No abstract text available
Text: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been
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AN015
EPC8000
ATS-54150K-C2-R0
EPC8004
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IRFH7921PBF
Abstract: No abstract text available
Text: PD - 97335 IRFH7921PbF HEXFET Power MOSFET Applications l l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Neworking & Computing Systems Optimized for Control FET Applications VDSS 30V RDS on max Qg 8.5mΩ@VGS = 10V 9.3nC Benefits
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IRFH7921PbF
IRFH7921PBF
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ADC10
Abstract: Q2D25
Text: Q2D Series – Quarter-Brick DC/DC Converter 48V Input Dual Output Data Sheet Features Applications Distributed power architectures Telecommunications equipment LAN/WAN applications Data processing applications Independent outputs of any combination of voltages from 1.2V to 5.0V
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GR-513
ADC10
Q2D25
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C1383 NPN transistor collector base and emitter
Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,
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10-foot
C1383 NPN transistor collector base and emitter
NPN transistor c1383
C1383 transistor
C1383 NPN transistor
Light-Dependent Resistor specification
c1983 transistor
pin configuration of C1383 transistor
LHI968
lhi878
c1383
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Untitled
Abstract: No abstract text available
Text: PD - 97050 IRF7823PbF HEXFET Power MOSFET Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems l Optimized for Control FET applications VDSS Benefits l Very Low RDS on at 4.5V VGS l Low Gate Charge
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IRF7823PbF
EIA-481
EIA-541.
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W103
Abstract: FW106 P CHANNEL MOSFET
Text: FW106 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 4-volt-drive, P channel MOSFET in one package.
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FW106
1000mm
--10V
--30V
--15V
W103
FW106
P CHANNEL MOSFET
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RF POWER amplifier 10 watt
Abstract: 8587 sm33 WiMax Configurations 6 pin DC power connector
Text: Model SM3338-43 3300-3800 MHz 20 Watt Linear Power Amplifier FOR WiMAX APPLICATIONS The SM3338-43 is a 3.3 to 3.8 GHz solid state GaAs FET amplifier designed for WiMAX applications. The amplifier provides 50 dB of linear gain with a P1dB of +43 dBm. The unit is designed for
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SM3338-43
SM3338-43
12VDC
RF POWER amplifier 10 watt
8587
sm33
WiMax Configurations
6 pin DC power connector
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TTL 7100
Abstract: SM7177-43
Text: Model SM7177-43 7100-7700 MHz 20 Watt Linear Power Amplifier FOR COFDM APPLICATIONS The SM7177-43 is a 7.1 to 7.7 GHz solid state GaAs FET amplifier designed for European digital video broadcast applications. The amplifier provides 58 dB of linear gain with a P1dB of +43 dBm. It is
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SM7177-43
SM7177-43
12VDC
TTL 7100
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500 watt RF amplifier GHz
Abstract: SM4450-43L
Text: Model SM4450-43L 4400-5000 MHz 20 Watt Ultra-Linear Power Amplifier FOR BROADCAST APPLICATIONS The SM4450-43L is a 4.4 to 5.0 GHz solid state GaAs FET amplifier designed for various commercial and military applications. The amplifier provides 55 dB of linear gain with a P1dB of +43 dBm. Our
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SM4450-43L
SM4450-43L
12VDC
500 watt RF amplifier GHz
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w201 mosfet
Abstract: FW201
Text: FW 201 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 2.5-volt-drive, N channel MOSFET in one package.
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1000mm
FW201
950713TM2fXHD-1/2
w201 mosfet
FW201
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FW101
Abstract: W101
Text: FW 101 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • High density mounting is possible because of the complex type which holds two chips of a low on-resistance, Very-high speed switching and 2.5-volt-drive, P channel MOSFET in one package.
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--10V
FW101
950713TM2fXHD-1/2
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W101
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Ruscak
Abstract: undersampling 1992 quadrature bandpass sigma-delta ADC AD9042 ad9101 walt Kester trends Lyons AD9100 AM receiver
Text: SECTION 5 UNDERSAMPLING APPLICATIONS Fundamentals of Undersampling Increasing ADC SFDR and ENOB using External SHAs Use of Dither Signals to Increase ADC Dynamic Range Effect of ADC Linearity and Resolution on SFDR and Noise in Digital Spectral Analysis Applications
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SC-17,
150MSPS
12-Bit
50MSPS
Ruscak
undersampling 1992
quadrature bandpass sigma-delta ADC
AD9042
ad9101
walt Kester
trends
Lyons
AD9100
AM receiver
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AN885 - "Brushless DC Motor Fundamentals"
Abstract: S 170 MOSFET TRANSISTOR AN898 600v 20a IGBT PIC stepper motor interfacing HEXFET Power MOSFET designer manual static characteristics of mosfet and igbt 2A mosfet igbt driver stage fuji igbt IGBT Modules Explanation of Technical Information DC MOTOR SPEED CONTROL USING IGBT
Text: M AN898 Determining MOSFET Driver Needs for Motor Drive Applications Author: Jamie Dunn Microchip Technology Inc. INTRODUCTION Electronic motor control for various types of motors represents one of the main applications for MOSFET drivers today. This application note discusses some of
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AN898
DK-2750
D-85737
NL-5152
AN885 - "Brushless DC Motor Fundamentals"
S 170 MOSFET TRANSISTOR
AN898
600v 20a IGBT
PIC stepper motor interfacing
HEXFET Power MOSFET designer manual
static characteristics of mosfet and igbt
2A mosfet igbt driver stage
fuji igbt IGBT Modules Explanation of Technical Information
DC MOTOR SPEED CONTROL USING IGBT
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2SK772
Abstract: EN239-2 EN-239-2
Text: Ordering number:EN2392A N-Channel Junction Silicon FET 2SK772 AF Amplifier Applications Applications Package Dimensions • Variable resistors, analog switches, AF amplifier, constant-current circuit. unit:mm 2034A [2SK772] 4.0 Features 3.0 · Adoption of FBET process.
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EN2392A
2SK772
2SK772]
2SK772
EN239-2
EN-239-2
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TTL 7100
Abstract: SM7175-43
Text: Model SM7175-43 7100-7500 MHz 20 Watt Ultra-Linear Power Amplifier FOR COFDM APPLICATIONS The SM7175-43 is a 7.1 to 7.5 GHz solid state GaAs FET amplifier designed for European digital video broadcast applications. The amplifier provides 58 dB of linear gain with a P1dB of +43 dBm. It is
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SM7175-43
SM7175-43
12VDC
TTL 7100
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TTL 7100
Abstract: SM6471-43 linear power amplifier
Text: Model SM6471-43 6400-7100 MHz 20 Watt Ultra-Linear Power Amplifier FOR COFDM APPLICATIONS The SM6471-43 is a 6.4 to 7.1 GHz solid state GaAs FET amplifier designed for various commercial and military applications. The amplifier provides 55 dB of linear gain with a P1dB of +43 dBm. It is
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SM6471-43
SM6471-43
-16dB
12VDC
TTL 7100
linear power amplifier
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C9052-02
Abstract: C9052-01 A9053-01 C9052 C9052-03 C9052-04 S2386 S5821 photodiodes frequency counter Circuit
Text: MODULE Si photodiode evaluation circuit C9052 series Easy-to-use circuit for Si photodiode operation Features Applications l Allows easy evaluation of standard Si photodiodes l On-board circuit examples for typical applications of l Testing and evaluation of standard Si photodiodes
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C9052
C9052-04
A9053)
C9052-01/-02/-03
A9053-01)
C9052-01
C9052-02
C9052-03
SE-171
KACC1083E03
C9052-02
C9052-01
A9053-01
C9052-03
S2386
S5821
photodiodes
frequency counter Circuit
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MG100g2ys1
Abstract: mg25q6es1 MG100J2YS1 YTF830 gt25q103 GT15H101 toshiba MG50N2YS9 MG200J2YS1 mg75n2ys1 MG75J2YS1
Text: SUMMARY OF POWER MOS FET BY APPLICATIONS Applications of the Toshiba power MOS FETs are gouped to their rated voltages and currents as shown below. POWER MOS FET FAMILIES Q tt-MOS Series Standard ^-M OS family gained outstanding polurarity in the market Q tt-MOS II Series
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EG50N2YS9*
G15N2YSI
MG25N2YS1
MG50N2YS1
G35Q2YSI
MG25Q2YS1
MG50Q2YS1
MG25S2YS1
G25N1JS1
G50N1JS1
MG100g2ys1
mg25q6es1
MG100J2YS1
YTF830
gt25q103
GT15H101
toshiba MG50N2YS9
MG200J2YS1
mg75n2ys1
MG75J2YS1
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