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    APPLICATIONS OF TRANSISTOR BC639 Search Results

    APPLICATIONS OF TRANSISTOR BC639 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    APPLICATIONS OF TRANSISTOR BC639 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C639

    Abstract: transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table
    Text: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistor series Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement Philips


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    PDF BC639; BCP56; BCX56 BC639 SC-43A* BC640 BCP56 OT223 SC-73 BCP53 transistor C639 transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table

    bc640

    Abstract: transistor bc640 transistor c 458 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR applications of Transistor BC640
    Text: BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter Value Units V VCER Collector-Emitter Voltage at RBE=1KΩ


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    PDF BC640 BC639 bc640 transistor bc640 transistor c 458 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR applications of Transistor BC640

    bc640

    Abstract: transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp
    Text: BC640 PNP Epitaxial Silicon Transistor BC640 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications • Complement to BC639 TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T a Symbol = 25°C unless otherwise noted Parameter


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    PDF BC640 BC640 BC639 transistor bC640 BC640BU BC639 BC640TA BC640TAR BC640TF BC640TFR transistor c 458 bc640 pnp

    Untitled

    Abstract: No abstract text available
    Text: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L


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    PDF BC63916 BC63916 BC639-16

    bc639

    Abstract: BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639


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    PDF M3D186 BC635; BC637; BC639 BC636, BC638 BC640. bc639 BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10

    BC635 TRANSISTOR E C B

    Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


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    PDF M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC635 TRANSISTOR E C B BC635 BC635-10 BC636 BC637 BC637-10 BC639 BC640 BC635 application note

    BC640

    Abstract: BC635 BC635-16 BC636 BC637 BC637-16 BC638 BC639 BC639-10 BC639-16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V).


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    PDF BC635; BC637; BC639 BC636, BC638 BC640. MAM259 SCA63 115002/00/03/pp8 BC640 BC635 BC635-16 BC636 BC637 BC637-16 BC639 BC639-10 BC639-16

    BC637

    Abstract: BC639 BC635 BC635-16 BC636 BC637-16 BC638 BC639-10 BC640 bc639 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639


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    PDF M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC637 BC639 BC635 BC635-16 BC636 BC637-16 BC639-10 BC640 bc639 philips

    Zener Diode 3v 400mW

    Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
    Text: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –


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    PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998

    BC63916

    Abstract: No abstract text available
    Text: BC63916 BC63916 Switching and Amplifier Applications TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER Parameter Collector-Emitter Voltage at RBE=1KΩ Value 100 Units


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    PDF BC63916 BC63916

    transistor bC640 OF CDIL

    Abstract: BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v
    Text: Continental Device India Limited IS/ISO 9002 Lic# QSC/L-000019.3 An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL TRANSISTORS BC635 BC637 BC639 NPN BC636 BC638 BC640 PNP TO-92 Plastic Package E CB Driver Stages of Audio Amplifiers Applications


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    PDF QSC/L-000019 BC635 BC637 BC639 BC636 BC638 BC640 BC636, BC638, transistor bC640 OF CDIL BC639 bc639 npn BC635 TRANSISTOR E C B BC635 BC636 BC637 BC638 BC640 NPN, PNP for 500ma, 30v

    transistor C635

    Abstract: c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147
    Text: BC635; BCP54; BCX54 45 V, 1 A NPN medium power transistor series Rev. 06 — 25 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement


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    PDF BC635; BCP54; BCX54 BC635 SC-43A BC636 BCP54 OT223 SC-73 BCP51 transistor C635 c63516 BD9397 C635 Philips C6351 c635 transistor BCX54-SOT89 PHILIPS BCX54 BCP54, BCX54 transistor BC 147

    transistor c63716

    Abstract: c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52
    Text: BC637; BCP55; BCX55 60 V, 1 A NPN medium power transistor series Rev. 06 — 18 February 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement


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    PDF BC637; BCP55; BCX55 BC637 SC-43A BC638 BCP55 OT223 SC-73 BCP52 transistor c63716 c637 transistor c63716 transistor C637 bc638 equivalent bc639 equivalent BC637 BC638 BCP52 BCX52

    bc639 equivalent

    Abstract: BC639
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO


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    PDF BC635 BC637 BC639 BC639 226AA) bc639 equivalent

    bc639

    Abstract: 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 2bc639 fairchild date code transistor BC637 complement applications of Transistor BC639 bc639 fairchild

    TEA15xx-series

    Abstract: laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62
    Text: Application Note Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Philips Semiconductors 1.2/W97 TRAD Medium Power Transistors and Rectifiers for Power Management Applications AN10117-01 Application Note Philips Semiconductors


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    PDF AN10117-01 2/W97 AN10116: AN10230: PMEG1020EA PMEG2010EA D-22529 TEA15xx-series laptop inverter ccfl low noise transistors bc638 power transistor transistors equivalents TV power transistor datasheet AN10117-01 PNP SOT89 laptop motherboard resistors Royer oscillator Schottky Diode SC-62

    NPN transistor ECB TO-92

    Abstract: Bc637 BC635 ECB transistor C 639 W transistor BC637 complement
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 NPN transistor ECB TO-92 Bc637 BC635 ECB transistor C 639 W transistor BC637 complement

    dn25d

    Abstract: HT20c12 IN3611 HART BELL 202 fet dn25d SPI MICROWIRE communication controller Symbios Logic Symbios Logic 20c15 HART 375 ht2012
    Text: BACK a Loop-Powered 4–20 mA DAC AD421 FUNCTIONAL BLOCK DIAGRAM FEATURES 4–20 mA Current Output HART* Compatible 16-Bit Resolution and Monotonicity ؎0.01% Integral Nonlinearity 5 V or 3 V Regulator Output 2.5 V and 1.25 V Precision Reference 750 ␮A Quiescent Current max


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    PDF 16-Bit 16-Pin AD421 AD421 16-Lead RU-16) C2105 dn25d HT20c12 IN3611 HART BELL 202 fet dn25d SPI MICROWIRE communication controller Symbios Logic Symbios Logic 20c15 HART 375 ht2012

    bc635

    Abstract: transistor C 639 W
    Text: BC635/637/639 BC635/637/639 Switching and Amplifier Applications • Complement to BC636/638/640 TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCER VCES VCEO Parameter


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    PDF BC635/637/639 BC636/638/640 BC635 BC637 BC639 bc635 transistor C 639 W

    dn25d

    Abstract: HT20c12 ht2012 4.20 mA Transmitter IN3611 bc337 pin out diagram HT20C depletion mode fet 20c15 AD421
    Text: a Loop-Powered 4–20 mA DAC AD421 FUNCTIONAL BLOCK DIAGRAM FEATURES 4–20 mA Current Output HART* Compatible 16-Bit Resolution and Monotonicity ؎0.01% Integral Nonlinearity 5 V or 3 V Regulator Output 2.5 V and 1.25 V Precision Reference 750 ␮A Quiescent Current max


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    PDF AD421 16-Bit 16-Pin AD421 16-Lead RU-16) C2105 dn25d HT20c12 ht2012 4.20 mA Transmitter IN3611 bc337 pin out diagram HT20C depletion mode fet 20c15

    bc639

    Abstract: BC635 TRANSISTOR E C B applications of Transistor BC639 BC635-16 BC637
    Text: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.


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    PDF BC636, BC638 BC640. BC635; BC637; BC639 AM259 BC635 BC637 BC639 BC635 TRANSISTOR E C B applications of Transistor BC639 BC635-16

    BC639

    Abstract: BC635 TRANSISTOR E C B
    Text: Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). APPLICATIONS DESCRIPTION 1 base 2 collector 3 emitter • Driver stages of audio/video amplifiers.


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    PDF BC635; BC637; BC639 BC636, BC638 BC640. BC635 BC637 BC639 BC635 TRANSISTOR E C B

    bc736

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC635/637/639 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • C om plem ent to BC635/638/640 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector Em itter V oltage at R be =1 Kohm : BC635 : BC637 : BC639


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    PDF BC635/637/639 BC635/638/640 BC635 BC637 BC639 bc736

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


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    PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc