MKT-HQ-370-PH 63v
Abstract: MKT-HQ-370-PH MKT-HQ 370-PH 63v MKT-HQ-370-PH 100v mkt-hq 370 - ph mkt-hq 370 ph PHILIPS MKT 373 100v MKT-HQ-370-PH mkt hq 371 ph mkt-hq
Text: BC Components Product specification Metallized polyester film capacitors MKT RADIAL POTTED CAPACITORS MKT 370/371/372/373 PITCH 5/7.5/10/15/22.5/27.5 mm handbook, full pagewidth 2222 370 2222 371 2222 372 2222 373 CBA111 Fig.1 Simplified outlines. FEATURES
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CBA111
HQN-384-02/103"
MKT-HQ-370-PH 63v
MKT-HQ-370-PH
MKT-HQ 370-PH 63v
MKT-HQ-370-PH 100v
mkt-hq 370 - ph
mkt-hq 370 ph
PHILIPS MKT 373
100v MKT-HQ-370-PH
mkt hq 371 ph
mkt-hq
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KP464
Abstract: Philips KP464 philips KP AXIAL EPOXY LACQUERED TYPES KP462 philips 84701 2222 460 82703 593-BC 2222 2222 107 595 bc
Text: BC Components Product specification Polypropylene film foil capacitors KP 460 to 464 KP AXIAL EPOXY LACQUERED TYPE handbook, full pagewidth CBA369 Fig.1 Simplified outlines. FEATURES • Supplied loose in box, taped on reel or unidirectional. APPLICATIONS
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CBA369
HQN-384-13/101"
KP464
Philips KP464
philips KP AXIAL EPOXY LACQUERED TYPES
KP462
philips 84701
2222 460 82703
593-BC
2222
2222 107
595 bc
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PDF
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SSD1306
Abstract: SSD1306Z
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1306 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without
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SSD1306
2002/95/EC)
SJ/T11364-2006)
SSD1306
SSD1306Z
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PDF
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SSD1306
Abstract: Resolution SSD-1306 OLED display SSD1306 SSD1306TR1 SSD1306Z
Text: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1306 Advance Information 128 x 64 Dot Matrix OLED/PLED Segment/Common Driver with Controller This document contains information on a new product. Specifications and information herein are subject to change without
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SSD1306
2002/95/EC)
SJ/T11364-2006)
SSD1306
Resolution
SSD-1306
OLED display SSD1306
SSD1306TR1
SSD1306Z
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PDF
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46LR16320B
Abstract: Mobile DDR SDRAM IS46LR16320B
Text: IS43LR16320B, IS46LR16320B 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320B is a 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43LR16320B,
IS46LR16320B
16Bits
IS43/46LR16320B
16bit
outpIS43LR16320B-6BL
60-ball
-40oC
32Mx16
IS43LR16320B-6BLI
46LR16320B
Mobile DDR SDRAM
IS46LR16320B
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PDF
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Untitled
Abstract: No abstract text available
Text: I S43LR32160B, I S46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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S43LR32160B,
S46LR32160B
32Bits
46LR32160B
32-bit
16Mx32
IS46LR32160B-6BLA1
90-ball
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54als245aj
Abstract: qml-38535 54ALS245A CQCC1-N20 GDFP2-F20 GDFP3-F20 5962-R242-92 1015 TO 92
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change tPLH, tPHL, tPZH, tPZL, and tPLZ. Remove vendor, FSCM 04713. 85-09-28 W. Heckman B Convert to military drawing format. Split VIL into temperatures. Add figures 2 and 4. Change propagation delays. Add footnotes to table I.
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Untitled
Abstract: No abstract text available
Text: I S43/ 46LR32400F 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR32400F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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46LR32400F
32Bits
46LR32400F
32-bit
90-ball
4Mx32
IS46LR32400F-6BLA1
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PDF
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46LR32400F
Abstract: Mobile DDR SDRAM
Text: IS43/46LR32400F 1M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32400F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR32400F
32Bits
IS43/46LR32400F
32-bit
IS43LR32400F-6BL
90-ball
-40oC
4Mx32
IS43LR32400F-6BLI
46LR32400F
Mobile DDR SDRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46LR16320C Advanced Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16320C
16Bits
IS43/46LR16320C
16-bit
-40oC
32Mx16
IS43LR16320C-5BLI
IS43LR16320C-6BLI
60-ball
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PDF
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46LR32160B
Abstract: Mobile DDR SDRAM 152-Ball 152-Ball PoP
Text: IS43LR32160B, IS46LR32160B 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43LR32160B,
IS46LR32160B
32Bits
IS43/46LR32160B
32-bit
16Mx32
IS43LR32160B-6BLI
90-ball
-40oC
46LR32160B
Mobile DDR SDRAM
152-Ball
152-Ball PoP
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PDF
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46LR16800F
Abstract: Mobile DDR SDRAM
Text: IS43/46LR16800F 2M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16800F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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IS43/46LR16800F
16Bits
IS43/46LR16800F
16-bit
IS43LR16800F-6BL
60-ball
-40oC
8Mx16
IS43LR16800F-6BLI
46LR16800F
Mobile DDR SDRAM
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PDF
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qml-38535
Abstract: 5962-8607501EA
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added vendor CAGE code 01295. Table II, deleted subgroups 10 and 11 from group C periodic inspections and added 10 and 11 to group A test requirements. Changed 1.3 input voltage range from -1.5 V to -1.2 V. Editorial
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5962-E013-92.
qml-38535
5962-8607501EA
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Untitled
Abstract: No abstract text available
Text: I S43/ 46LR16800F 2M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/ 46LR16800F is 134,217,728 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
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46LR16800F
16Bits
46LR16800F
16-bit
60-ball
8Mx16
IS46LR16800F-6BLA1
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OP15AZ
Abstract: 5962-8954201pa 5962-8954201GA qml-38535 CDFP2-F10 GDFP1-F10 OP-15A OP-15B
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 03. Add case outline H. Add radiation hardness requirements. Update boilerplate to reflect new requirements. – rrp 00-07-12 R. MONNIN B Make changes to TCVOS, IOS, IIB, CMRR, VO, PSRR, SR, GBW, PD tests
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5962F8761501VXA
Abstract: qml-38535 54AC11008FK ac08d 5962F8761501V9A
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change ac limits in table I. Add vendor CAGE 18714 to device type 01CX. Editorial changes throughout. Add device type 02, add case outline E and CAGE code 01295. Made editorial changes throughout document.
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F8859.
MIL-PRF-38535
F8859
3V146
5962F8761501VXA
qml-38535
54AC11008FK
ac08d
5962F8761501V9A
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5962-8766106XA
Abstract: 5962-8766102XA qml-38535 V05 SMD CODE MARKING 5962-8766101xa SMJ27C128-20JM
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Added Arrhenius equation for unbiased bake under margin test method A, back end margin test step C. Corrected military part numbers for device types 01 and 02. Technical changes made to 1.2.2, table I, figure 1, figure 2, figure 4, figure 5, 4.3.1, and table II. Added vendor
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 04 for device class V and radiation hardened requirements. Delete CAGE 64155. –ro 00-03-16 R. MONNIN B Drawing updated to reflect current requirements. -rrp 05-01-20 R. MONNIN REV SHEET
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34333
Abstract: 5962-8670402FA 5962-8670402HA qml-38535 U3158 CDFP2-F10 5962-86704 5962-8670404HA 5962-8670406PA UC1843AJ
Text: REVISIONS LTR DESCRIPTION A DATE YR-MO-DA APPROVED Add vendor CAGE 34333. Add vendor CAGE U4637. Editorial changes throughout. 87-04-16 M. A. Frye B Add device types 02, 03, and 04. Editorial changes throughout. 87-12-21 M. A. Frye C Change vendor CAGE 12969 to 48726. Change max duty cycle min limit. Add
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U4637.
U4637
U3158
LE174JB
34333
5962-8670402FA
5962-8670402HA
qml-38535
U3158
CDFP2-F10
5962-86704
5962-8670404HA
5962-8670406PA
UC1843AJ
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PDF
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Add device type 04 for device class V and radiation hardened requirements. Delete CAGE 64155. –ro 00-03-16 R. MONNIN B Drawing updated to reflect current requirements. -rrp 05-01-20 R. MONNIN C Update drawing as part of the 5 year review. - jt
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5962-8976301EA
Abstract: DG403AZ 5962-8976301M2A 5962-8976301MEA DG403AZ/883 QML-38535 DG403AK/883 DG403AK/883B DG403AZ/883B SMD MARKING CODE s4
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Editorial changes throughout. Change to one part-one part number format. Add appendix. 92-11-04 M. A. Frye B Change drawing to current requirements. Editorial changes throughout. - drw 04-09-24 Raymond Monnin
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1ES66
5962-8976301EA
DG403AZ
5962-8976301M2A
5962-8976301MEA
DG403AZ/883
QML-38535
DG403AK/883
DG403AK/883B
DG403AZ/883B
SMD MARKING CODE s4
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PDF
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qml38535
Abstract: 5962-8982402PA 5962-89824
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Changes in accordance with N.O.R. 5962-R140-95 95-06-13 M. A. FRYE B Drawing updated to reflect current requirements. -ro 01-03-30 R. MONNIN C Update drawing as part of 5 year review. -rrp 07-06-12 ROBERT M. HEBER
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5962-R140-95
qml38535
5962-8982402PA
5962-89824
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90ns03
Abstract: LBAA marking code A0L-A10L A1L smd 662K qml-38535 5962-8861010ZA 5962-8861012UA IDT7133S90G
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED A Changes to table I. Editorial changes throughout. 89-10-16 M.A. Frye B Add device types 05 and 06. Add case outline "U" to drawing. Removed vendor CAGE 61772 as source of supply for case outline Y. Changes to table I. Editorial changes throughout.
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OCR Scan
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5962-The
90ns03
LBAA marking code
A0L-A10L
A1L smd
662K
qml-38535
5962-8861010ZA
5962-8861012UA
IDT7133S90G
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PDF
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CDFP2-F14
Abstract: 5962-8967701CA 5962-89677 LT1014 LT1014A 5962-89677022A QML38535 5962-8967702DA qml-38535 5962-8967702XA
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Changes in accordance with N.O.R. 5962-R228-92. 92-08-11 M.A. FRYE Changes in accordance with N.O.R. 5962-R047-95. 94-12-14 M.A. FRYE Changes in accordance with N.O.R. 5962-R190-95. 95-08-16 M.A. FRYE Changes in accordance with N.O.R. 5962-R146-97.
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OCR Scan
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5962-R228-92.
5962-R047-95.
5962-R190-95.
5962-R146-97.
CDFP2-F14
5962-8967701CA
5962-89677
LT1014
LT1014A
5962-89677022A
QML38535
5962-8967702DA
qml-38535
5962-8967702XA
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PDF
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