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    APT20M45 Price and Stock

    Microchip Technology Inc APT20M45SVRG

    MOSFET N-CH 200V 56A D3PAK
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    Microchip Technology Inc APT20M45SVRG Tube 26 Weeks
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    Microchip Technology Inc APT20M45BVRG

    MOSFET N-CH 200V 56A TO247
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    Microchip Technology Inc APT20M45BVRG Tube 26 Weeks
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    Microchip Technology Inc APT20M45BVFRG

    MOSFET N-CH 200V 56A TO247
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    DigiKey APT20M45BVFRG Tube 50
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    Avnet Americas APT20M45BVFRG Tube 32 Weeks 50
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    Microchip Technology Inc APT20M45BVFRG Tube 32 Weeks
    • 1 $12.23
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    NAC APT20M45BVFRG Tube 31
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    Microchip Technology Inc APT20M45SVFRG

    MOSFET N-CH 200V 56A D3PAK
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    DigiKey APT20M45SVFRG Tube 40
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    Mouser Electronics APT20M45SVFRG
    • 1 $13.3
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    Microchip Technology Inc APT20M45SVFRG Tube 32 Weeks
    • 1 $13.3
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    Microchip Technology Inc APT20M45DVR

    MOSFET MOS 5 200 V 45 mOhm DIE, Projected EOL: 2044-04-30
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    Microchip Technology Inc APT20M45DVR 26 Weeks
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    APT20M45 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT20M45BNFR Advanced Power Technology Power MOS IV Scan PDF
    APT20M45BNR Advanced Power Technology Power MOS IV - N-Channel Enhancement Mode Low Voltage Power MOSFETS Scan PDF
    APT20M45BVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45BVFR Advanced Power Technology POWER MOS V 200V 56A 0.045 Ohm Original PDF
    APT20M45BVFRG Microsemi Power FREDFET; Package: TO-247 [B]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF
    APT20M45BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45BVR Microsemi Power MOS V MOSFET Original PDF
    APT20M45BVR Philips Semiconductors 4-to-16 line decoder/demultiplexer with input latches Original PDF
    APT20M45BVRG Microsemi Power MOSFET; Package: TO-247 [B]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF
    APT20M45SVFR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45SVFR Microsemi Power MOS V FREDFET Original PDF
    APT20M45SVFRG Microsemi Power FREDFET; Package: D3 [S]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF
    APT20M45SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT20M45SVR Microsemi Power MOS V MOSFET Original PDF
    APT20M45SVRG Microsemi Power MOSFET; Package: D3 [S]; ID (A): 56; RDS(on) (Ohms): 0.045; BVDSS (V): 200; Original PDF

    APT20M45 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    APT20M45BVR

    Abstract: No abstract text available
    Text: APT20M45BVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original
    APT20M45BVR O-247 O-247 APT20M45BVR PDF

    APT20M45SVFR

    Abstract: No abstract text available
    Text: APT20M45SVFR 200V POWER MOS V 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT20M45SVFR APT20M45SVFR PDF

    APT20M45SVFR

    Abstract: No abstract text available
    Text: APT20M45SVFR 56A 0.045Ω 200V POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    Original
    APT20M45SVFR MIL-STD-750 APT20M45SVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 56A 0.045Ω 200V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT20M45BVFR O-247 O-247 PDF

    APT20M45B

    Abstract: APT20M45BVR Diode 224
    Text: APT20M45BVR G 200V, 56A, 0.045Ω APT20M45BVR(G) POWER MOS V POWER MOS V® is a new generation of high voltage N-Channel enhancement TO mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves


    Original
    APT20M45BVR O-247 APT20M45B Diode 224 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVFR G *G Denotes RoHS Compliant, Pb Free Terminal Finish. 200V POWER MOS V 56A 0.045Ω FREDFET D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT20M45SVFR PDF

    APT20M45SVR

    Abstract: No abstract text available
    Text: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.


    Original
    APT20M45SVR APT20M45SVR PDF

    APT20M45SVR

    Abstract: No abstract text available
    Text: APT20M45SVR 56A 0.045Ω 200V POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original
    APT20M45SVR APT20M45SVR PDF

    APT20M45BVFR

    Abstract: No abstract text available
    Text: APT20M45BVFR 200V POWER MOS V 56A 0.045Ω FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original
    APT20M45BVFR O-247 O-247 APT20M45BVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV' 200V 58A 200V 50A 0.045Í2 0.060Q AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT20M45BNFR APT20M60BNFR APT20M45/20M60BNFR O-247AD PDF

    20M60BNFR

    Abstract: No abstract text available
    Text: A d van ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV< 200V 58A 200V 50A 0.045Í2 0.060Q A V A LA N C H E RATED FR EDFET N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol ^D S S All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT20M45BNFR APT20M60BNFR O-247AD 20M60BNFR PDF

    TL 084L

    Abstract: APT20M45BNR APT20M60BNR 20M60
    Text: A d v a n ced P o w er Te c h n o l o g y O D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV' 58A 50A 0.04512 0.060Q AVALANCHE RATED N -C H A N N E L ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT20M45BNR APT20M60BNR O-247AD CI00m27 TL 084L 20M60 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y O D O S APT20M45BNR 200V APT20M60BNR 200V 58A 0.04512 50A 0.0600 POWER MOS IV UIS RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT20M45BNR APT20M60BNR APT20M45BNR APT20M60BNR MIL-STD-750 773nH, O-247AD PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVFR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V POWER MOSV i 56A 0.0450 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT20M45SVFR MIL-STD-750 PDF

    20M60

    Abstract: APT20M60BNFR 20M60BN GD142 APT20M45BNFR BVJ 47 20M60BNFR
    Text: A d v a n ced P o w er Te c h n o l o g y APT20M45BNFR APT20M60BNFR POWER MOS IV® 200V 58A 200V 50A 0.045U 0.060U AVALANCHE RATED FREDFET N-C H A N N EL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS ’d 'dm V GS V GSM PD t j ,t s t g


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    APT20M45BNFR APT20M60BNFR O-247AD 20M60 20M60BN GD142 BVJ 47 20M60BNFR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M45SVR A dvanced W 7Æ P o w e r Te c h n o lo g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT20M45SVR PDF

    APT20M40JN

    Abstract: 20M40JN apt20m45j AC3S 20M45
    Text: ADVANCE» POWER TECHNOLOGY b3E I DEiTTCH 000105b Q0 1 • A D VA N C ED PO W ER Te c h n o lo g y • APT20M40JN 200V 77.0A 0.040Q APT20M45JN 200V 73.0A 0.045Q ISOTOP* 5 Û "UL Recognized" File No. E145592 S POWER MOS IV SINGLE DIE ISOTOP PACKAGE N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


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    000105b APT20M40JN APT20M45JN E145592 20M40JN 20M45JN apt20m45j AC3S 20M45 PDF

    20M60

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y Q D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV* 58A 50A 0.045Í2 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan
    APT20M45BNR APT20M60BNR APT20M45/20M60BNR O-247AD GGQm27 20M60 PDF

    3055t

    Abstract: diode zd 22
    Text: APT20M45SVFR • R ADVANCED W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan
    APT20M45SVFR APT20M45SVFR 3055t diode zd 22 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVFR • R A dvanced W .\A p o w e r Te c h n o l o g y “ 200V 56A 0.045Q POWER MOS V FREDFET Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect,


    OCR Scan
    APT20M45BVFR O-247 APT20M45BVFR PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced POW ER TECHNOLOGY * O D APT20M45BNR 200V APT20M60BNR 200V O S POWER MOS IV 58A 0.0450 50A 0.0600 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V All Ratings: Tc = 25°C unless otherwise specified. Parameter


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    APT20M45BNR APT20M60BNR O-247AD APT20M45/20M60BNR PDF

    0502045

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y APT20M45BNFR APT20M60BNFR sBWER MOS IV'01 200V 58A 0.0451» 200V 50A 0.06012 AVALANCHE RATED FREDFET N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V All R a tin g s: T c = 2 5 °C u n le ss o th e rw ise sp e cifie d .


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    APT20M45BNFR APT20M60BNFR APT20M45BNFR APT20M45/20M60BNFR O-247AD 0502045 PDF

    Untitled

    Abstract: No abstract text available
    Text: A dvanced APT20M45BVR pow er Te c h n o lo g y 9 200V 56A 0.045Q POWER MOSV Power MOS V is a newgeneration of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan
    APT20M45BVR O-247 APT20M45BVR PDF

    Untitled

    Abstract: No abstract text available
    Text: APT20M45BVR ADVANCED W 7Æ P o w e r Te c h n o l o g y 200V 56A 0.0450 POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


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    APT20M45BVR O-247 PDF