Untitled
Abstract: No abstract text available
Text: APT30DF100HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1000V IC = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • •
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APT30DF100HJ
OT-227)
Absolute84)
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Untitled
Abstract: No abstract text available
Text: APT30DF100HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1000V IC = 30A @ Tc = 80°C Application • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~
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APT30DF100HJ
OT-227)
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Untitled
Abstract: No abstract text available
Text: APT8020JFLL 800V POWER MOS 7 R 33A 0.220Ω FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020JFLL
OT-227
E145592
VGSM25
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IGBT 900V 80A
Abstract: APT40GP90B2DF2
Text: TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90B2DF2
APT40GP90B2DF2
IGBT 900V 80A
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Untitled
Abstract: No abstract text available
Text: APT8020B2FLL APT8020LFLL 38A 0.220Ω 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2FLL
APT8020LFLL
O-264
O-264
T-MA15)
O-247
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SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
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APT8020JLL
Abstract: APT30DF100
Text: APT8020JLL 800V POWER MOS 7 R 33A 0.200Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020JLL
OT-227
APT8020JLL
APT30DF100
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Untitled
Abstract: No abstract text available
Text: APT8020JLL 33A 0.200Ω 800V POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020JLL
OT-227
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Untitled
Abstract: No abstract text available
Text: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2LL
APT8020LLL
O-264
O-264
O-247
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APT8020B2FLL
Abstract: APT8020LFLL
Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2FLL
APT8020LFLL
O-264
O-264
O-247
APT8020B2FLL
APT8020LFLL
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APT8020JFLL
Abstract: V120DD
Text: APT8020JFLL 800V POWER MOS 7 R 33A 0.220Ω FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020JFLL
E145592
OT-227
APT8020JFLL
V120DD
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IGBT 900V 80A
Abstract: 196F 20A 100 V ISOTOP Diode 20A 1,0V ISOTOP
Text: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90JDF2
APT40GP90JDF2
IGBT 900V 80A
196F
20A 100 V ISOTOP
Diode 20A 1,0V ISOTOP
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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Untitled
Abstract: No abstract text available
Text: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90JDF2
APT40GP90JDF2
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IGBT 900V 80A
Abstract: 228F APT40GP90B T0-247
Text: APT40GP90B TYPICAL PERFORMANCE CURVES APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90B
O-247
IGBT 900V 80A
228F
APT40GP90B
T0-247
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228F
Abstract: APT40GP90B2DF2
Text: TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90B2DF2
228F
APT40GP90B2DF2
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Untitled
Abstract: No abstract text available
Text: APT8020JFLL 33A 0.220Ω 800V POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020JFLL
E145592
OT-227
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VRF2933FL
Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system
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MS5-001-14
VRF2933FL
VRF164FL
ARF463AP1
Non - Isolated Buck, application
DRF1301
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Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT40GP90B APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90B
O-247
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APT8020B2FLL
Abstract: APT8020LFLL
Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2FLL
APT8020LFLL
O-264
O-264
O-247
APT8020B2FLL
APT8020LFLL
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APT8020B2LL
Abstract: APT8020LLL
Text: APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2LL
APT8020LLL
O-264
O-264
O-247
APT8020B2LL
APT8020LLL
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APT8020JFLL
Abstract: 0173F
Text: APT8020JFLL 800V POWER MOS 7 R ID SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS VDSS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT8020JFLL
OT-227
APT8020JFLL
0173F
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Untitled
Abstract: No abstract text available
Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8020B2FLL
APT8020LFLL
O-264
O-247
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APT40GP90J
Abstract: No abstract text available
Text: APT40GP90J APT40GP90J TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT40GP90J
APT40GP90J
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