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    Microchip Technology Inc APT30DF60HJ

    BRIDGE RECT 1P 600V 60A SOT227
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    APT30DF60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30DF60HJ Microsemi Bridge Rectifiers - Modules, Discrete Semiconductor Products, POWER MODULE FULL BRIDGE SOT-227 Original PDF

    APT30DF60 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: APT30DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 30A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~        


    Original     		PDF APT30DF60HJ OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT30DF60HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 600V IF = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • • +


    Original     		PDF APT30DF60HJ OT-227)

    APT77N60JC3

    Abstract: No abstract text available
    Text: APT77N60JC3 600V 77A 0.035Ω Super Junction MOSFET S S COOLMOS 27 2 T- D G SO Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • N-Channel Enhancement Mode • Popular SOT-227 Package


    Original     		PDF APT77N60JC3 OT-227 APT77N60JC3

    APT8014L2FLL

    Abstract: MAX7238
    Text: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8014L2FLL O-264 O-264 APT8014L2FLL MAX7238

    APT10026JFLL

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.26 Ω POWER MOS 7 R FREDFET S S 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10026JFLL OT-227 APT10026JFLL

    7106

    Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
    Text: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8014JFLL OT-227 7106 data sheet IC 7106 IL 7106 APT8014JFLL

    APT8014L2FLL

    Abstract: APT8014L2FLLG
    Text: 800V 52A APT8014L2FLL *G POWER MOS 7 R 0.16Ω Ω APT8014L2FLLG* Denotes RoHS Compliant, Pb Free Terminal Finish. FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT8014L2FLL APT8014L2FLLG* O-264 O-264 APT8014L2FLL APT8014L2FLLG

    APT6010LLLG

    Abstract: APT6010B2LL APT6010LLL
    Text: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* O-264 APT6010LLLG APT6010B2LL APT6010LLL

    APT6013B2LL

    Abstract: APT6013LLL
    Text: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6013B2LL APT6013LLL O-264 O-264 O-247 APT6013B2LL APT6013LLL

    Untitled

    Abstract: No abstract text available
    Text: APT6017JLL 600V POWER MOS 7 R MOSFET ID 27 2 T- D SO "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS VDSS S G ® Symbol 0.170Ω S Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT6017JLL OT-227

    APT5010JLL

    Abstract: No abstract text available
    Text: APT5010JLL 500V 41A 0.100Ω R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5010JLL APT5010JLL

    DD2030

    Abstract: No abstract text available
    Text: APT6013B2LL APT6013LLL 600V 43A POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6013B2LL APT6013LLL O-264 O-247 DD2030

    7441

    Abstract: IC 7441 datasheet APT65GP60JDF2
    Text: TYPICAL PERFORMANCE CURVES APT65GP60JDF2 APT65GP60JDF2 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT65GP60JDF2 7441 IC 7441 datasheet APT65GP60JDF2

    APT5016BFLL

    Abstract: APT5016SFLL
    Text: APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5016BFLL APT5016SFLL O-247 O-247 APT5016BFLL APT5016SFLL

    Untitled

    Abstract: No abstract text available
    Text: APT5010B2LL G APT5010LLL(G) 500V 46A 0.100Ω *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT5010B2LL APT5010LLL O-247

    Untitled

    Abstract: No abstract text available
    Text: APT30M17JFLL 0.017Ω 300V 135A POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT30M17JFLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT5016BFLL APT5016SFLL 500V 30A 0.160Ω POWER MOS 7 R FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5016BFLL APT5016SFLL O-247 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT10026JFLL 1000V 30A 0.28 Ω POWER MOS 7 R FREDFET VDSS ID SO 27 -T 2 "UL Recognized" ISOTOP D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol D G ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT10026JFLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041 Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Popular TO-247 or Surface Mount D3 package.


    Original     		PDF APT77N60BC6 APT77N60SC6 O-247 Diss20

    Untitled

    Abstract: No abstract text available
    Text: APT10021JLL 1000V 37A 0.210Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT10021JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: 600V 94A APT94N60L2C3 APT94N60L2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET • Ultra Low RDS ON TO-264 • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extremedv/dt Rated D • Dual die (parallel)


    Original     		PDF APT94N60L2C3 APT94N60L2C3G* O-264 APT94N60L2C3 75DQ60 APT30DF60

    Untitled

    Abstract: No abstract text available
    Text: APT6010JFLL 600V 47A 0.100Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6010JFLL OT-227

    APT8024B2FLL

    Abstract: APT8024LFLL
    Text: APT8024B2FLL APT8024LFLL 800V 31A 0.260Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8024B2FLL APT8024LFLL O-264 O-264 APT8024B2FLL APT8024LFLL

    APT6010JLL

    Abstract: No abstract text available
    Text: APT6010JLL 600V 47A 0.100Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6010JLL OT-227 APT6010JLL