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    APT6015LVFR Price and Stock

    Microchip Technology Inc APT6015LVFRG

    MOSFET N-CH 600V 38A TO264
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    DigiKey APT6015LVFRG Tube 25
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    Avnet Americas APT6015LVFRG Tube 32 Weeks 25
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    Mouser Electronics APT6015LVFRG
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    Newark APT6015LVFRG Bulk 25
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    Microchip Technology Inc APT6015LVFRG Tube 32 Weeks
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    Onlinecomponents.com APT6015LVFRG
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    TME APT6015LVFRG 1
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    NAC APT6015LVFRG Tube 16
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    Master Electronics APT6015LVFRG
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    APT6015LVFR Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT6015LVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT6015LVFR Microsemi Power MOS V FREDFET Original PDF
    APT6015LVFR Unknown Power MOS V, 600V 38A, MOS-FET N-Channel enhanced Original PDF
    APT6015LVFRG Microchip Technology MOSFET N-CH 600V 38A TO264 Original PDF

    APT6015LVFR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT6015B2VFR APT6015LVFR 0.150Ω Ω 600V 38A POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6015B2VFR APT6015LVFR O-264 O-264 APT6015B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6015B2VFR APT6015LVFR 0.150Ω Ω 600V 38A POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6015B2VFR APT6015LVFR O-264 O-264 APT6015B2VFR O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6015LVFR Ω 38A 0.150Ω 600V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6015LVFR O-264 O-264 APT6015LVFR

    Untitled

    Abstract: No abstract text available
    Text: APT6015LVFR 600V POWER MOS V 38A 0.150W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6015LVFR O-264 O-264

    APT6015B2VFR

    Abstract: APT6015LVFR
    Text: APT6015B2VFR APT6015LVFR 0.150Ω Ω 600V 38A POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT6015B2VFR APT6015LVFR O-264 O-264 APT6015B2VFR O-247 APT6015LVFR

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF