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    APT60GA60JD60 Price and Stock

    Microchip Technology Inc APT60GA60JD60

    IGBT MOD 600V 112A 356W ISOTOP
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    DigiKey APT60GA60JD60 Tube 1,258 1
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    Avnet Americas APT60GA60JD60 Tube 26 Weeks 20
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    Mouser Electronics APT60GA60JD60 42
    • 1 $32.66
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    Newark APT60GA60JD60 Bulk 20
    • 1 $32.66
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    Future Electronics APT60GA60JD60 20
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    Microchip Technology Inc APT60GA60JD60 Tube 26 Weeks
    • 1 $32.66
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    Onlinecomponents.com APT60GA60JD60
    • 1 $31.18
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    TME APT60GA60JD60 1
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    NAC APT60GA60JD60 Tube 11
    • 1 $30.29
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    Richardson RFPD APT60GA60JD60 20
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    Avnet Silica APT60GA60JD60 28 Weeks 20
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    EBV Elektronik APT60GA60JD60 27 Weeks 20
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    Master Electronics APT60GA60JD60
    • 1 $31.18
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    • 100 $25.78
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    Microsemi Corporation APT60GA60JD60

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    Bristol Electronics APT60GA60JD60 10
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    mct APT60GA60JD60

    Insulated Gate Bipolar Transistor, 112A I(C), 600V V(BR)CES, N-Channel
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    ComSIT USA APT60GA60JD60 68
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    APT60GA60JD60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT60GA60JD60 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP ; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 60; Original PDF

    APT60GA60JD60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    100A 300V IGBT

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V
    Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT60GA60JD60 APT60GA60JD60 E145592 100A 300V IGBT Fast Recovery Bridge Rectifier, 60A, 600V PDF

    Fast Recovery Bridge Rectifier, 60A, 600V

    Abstract: APT60GA60JD60 APT60GT60BR MIC4452 fast recovery diode 1a
    Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT60GA60JD60 E145592 Fast Recovery Bridge Rectifier, 60A, 600V APT60GA60JD60 APT60GT60BR MIC4452 fast recovery diode 1a PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT60GA60JD60 APT60GA60JD60 E145592 switchin27 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT60GA60JD60 E145592 PDF

    Untitled

    Abstract: No abstract text available
    Text: APT60GA60JD60 600V High Speed PT IGBT E E POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 22 C G through leading technology silicon design and lifetime control processes. A reduced Eoff TO S VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		APT60GA60JD60 APT60GA60JD60 E145592 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series PDF

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301 PDF

    APT85GR120JD60

    Abstract: No abstract text available
    Text: APT85GR120JD60 APT85GR120JD60 1200V, 85A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT E E The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.


    Original     		APT85GR120JD60 APT85GR120JD60 E145592 PDF