APT8024LVR Search Results

APT8024LVR Price and Stock

Filter by Manufacturer


Microchip Technology Inc APT8024LVRG MOSFET N-CH 800V 33A TO264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	APT8024LVRG	Tube			25	1 - 10 - 100 $18.0716 1000 $18.0716 10000 $18.0716	Buy Now

APT8024LVR Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
APT8024LVR		Advanced Power Technology	High voltage N-Channel enhancement mode power MOSFET		Original	PDF
APT8024LVR		Microsemi	Power MOS V MOSFET		Original	PDF

APT8024LVR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT8024B2VFR Abstract: APT8024B2VR APT8024LVR Text: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247 APT8024B2VR APT8024LVR	PDF
diode 132 Abstract: No abstract text available Text: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT8024B2VR APT8024LVR O-264 O-264 APT8024 O-247 diode 132	PDF
Untitled Abstract: No abstract text available Text: APT8024B2VR APT8024LVR 800V 33A 0.240W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT8024B2VR APT8024LVR O-264 O-264 APT8024 O-247	PDF
Untitled Abstract: No abstract text available Text: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247	PDF
Untitled Abstract: No abstract text available Text: APT8024B2VR APT8024LVR 800V 33A POWER MOS V MOSFET B2VR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®	Original	APT8024B2VR APT8024LVR O-264 O-264 APT8024B2VFR O-247	PDF
5017BVR Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60 Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60	PDF
APT6015LVR Abstract: 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on	Original	MIL-PRF-19500 ISO9001 APT6015LVR 5020bn APT6011LVFR arf450 5017bvr APT2*61D120J FREDFETs apt8015jvr APT100GF60LR APT5014LVR	PDF