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    APT80GA90S Price and Stock

    Microchip Technology Inc APT80GA90S

    IGBTs IGBT PT MOS 8 Single 900 V 80 A TO-268
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    APT80GA90S Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT80GA90S Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 80; Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90B APT80GA90S

    APT80GA90S

    Abstract: APT80GA90B MIC4452
    Text: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90B APT80GA90S APT80GA90S APT80GA90B MIC4452

    Untitled

    Abstract: No abstract text available
    Text: APT80GA90B APT80GA90S 900V High Speed PT IGBT T OPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT80GA90B APT80GA90S switc16)