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    Microchip Technology Inc ARF473

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    ARF473 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ARF473 Advanced Power Technology RF POWER MOSFET N-CHANNEL ENHANCEMENT MODE Original PDF
    ARF473 Advanced Power Technology RF POWER MOSFET Original PDF
    ARF473 Microsemi RF MOSFET (VDMOS) Original PDF

    ARF473 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Trimmer ARCO

    Abstract: No abstract text available
    Text: Common Source Push-Pull Pair ARF473 AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original
    ARF473 ARF473 Trimmer ARCO PDF

    Untitled

    Abstract: No abstract text available
    Text: Common Source Push-Pull Pair ARF473 D AR F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original
    ARF473 ARF473 100mS PDF

    Untitled

    Abstract: No abstract text available
    Text: Common Source Push-Pull Pair ARF473 AR F47 3 D G G RF POWER MOSFET S Flange D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original
    ARF473 ARF473 PDF

    ARF473

    Abstract: No abstract text available
    Text: ARF473 Common Source Push-Pull Pair AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original
    ARF473 ARF473 PDF

    Untitled

    Abstract: No abstract text available
    Text: Common Source Push-Pull Pair ARF473 G *G Denotes RoHS Compliant, Pb Free Terminal Finish. D AR F47 G G RF POWER MOSFET S (Flange) 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage


    Original
    ARF473 100mS PDF

    2643006302

    Abstract: 2643665902 ARF473 RF Amplifier 500w DF-47
    Text: Common Source Push-Pull Pair ARF473 AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.


    Original
    ARF473 ARF473 2643006302 2643665902 RF Amplifier 500w DF-47 PDF

    Mosfets

    Abstract: 100U ARF473 m068 D2150
    Text: * *SRC=ARF473;ARF473;MOSFETs N;Power >100V;APT 500V 10A 0.6ohm Gemini *SYM=POWMOSN .SUBCKT ARF473 10 20 30 * use two models as below for the dual part * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 0.284 RS 40 3 16M RG 20 2 .215 CGS 2 3 1.14N


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    ARF473 ARF473 04MEG Mosfets 100U m068 D2150 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter PDF

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original
    des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


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