Trimmer ARCO
Abstract: No abstract text available
Text: Common Source Push-Pull Pair ARF473 AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
|
Original
|
ARF473
ARF473
Trimmer ARCO
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Common Source Push-Pull Pair ARF473 D AR F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
|
Original
|
ARF473
ARF473
100mS
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Common Source Push-Pull Pair ARF473 AR F47 3 D G G RF POWER MOSFET S Flange D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
|
Original
|
ARF473
ARF473
|
PDF
|
ARF473
Abstract: No abstract text available
Text: ARF473 Common Source Push-Pull Pair AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
|
Original
|
ARF473
ARF473
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Common Source Push-Pull Pair ARF473 G *G Denotes RoHS Compliant, Pb Free Terminal Finish. D AR F47 G G RF POWER MOSFET S (Flange) 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage
|
Original
|
ARF473
100mS
|
PDF
|
2643006302
Abstract: 2643665902 ARF473 RF Amplifier 500w DF-47
Text: Common Source Push-Pull Pair ARF473 AR D F47 G G RF POWER MOSFET S Flange 3 D N - CHANNEL ENHANCEMENT MODE 165 V 300 W 150 MHz The ARF473 is a matched pair of RF power transistors in a common source configuration. It is designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifiers up to 150 MHz.
|
Original
|
ARF473
ARF473
2643006302
2643665902
RF Amplifier 500w
DF-47
|
PDF
|
Mosfets
Abstract: 100U ARF473 m068 D2150
Text: * *SRC=ARF473;ARF473;MOSFETs N;Power >100V;APT 500V 10A 0.6ohm Gemini *SYM=POWMOSN .SUBCKT ARF473 10 20 30 * use two models as below for the dual part * TERMINALS: D G S M1 1 2 3 3 DMOS L=1U W=1U RD 10 1 0.284 RS 40 3 16M RG 20 2 .215 CGS 2 3 1.14N
|
Original
|
ARF473
ARF473
04MEG
Mosfets
100U
m068
D2150
|
PDF
|
SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
|
Original
|
10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
|
PDF
|
smps 1000W
Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain
|
Original
|
des691
10F-A,
smps 1000W
600V 300A igbt dc to dc boost converter
SP6-P
DRF1400
smps 500w half bridge
DRF1300
1000w inverter MOSFET
1000W solar power inverter
APT30GT60BRG
3000w inverter mosfet circuit
|
PDF
|
sot-227 footprint
Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
|
Original
|
|
PDF
|