ASE, SILICONE Search Results

ASE, SILICONE Result Highlights (5)

Part	Manufacturer	Description
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
P104	Coilcraft Inc	Silicon Controlled Rectifier,
5962-8757701RA	Renesas Electronics Corporation	Microcircuit, CMOS, Octal Bus Transceiver, Monolithic Silicon
HXT45430-DNU	Renesas Electronics Corporation	112Gb/s PAM4 Silicon Photonic Modulator Driver

ASE, SILICONE Price and Stock

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Silicon Storage Technology SST28SF040-150-4C-NH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	SST28SF040-150-4C-NH		4,665			1 $49.55 10 $49.55 100 $8.88 1000 $8.88 10000 $8.88	Buy Now
Deltrol Controls 70084-05 DSVP14 Silicone Diaphragm \| Deltrol Controls 70084-05
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	70084-05		187			1 - 10 $4.04 100 $3.23 1000 $2.83 10000 $2.73	Buy Now
Carling Technologies VB1-01-SILICONE-BOOT-BLACK Hardware Switch Rocker
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	VB1-01-SILICONE-BOOT-BLACK		99			1 - 10 $8.38 100 $4.66 1000 $3.36 10000 $3.22	Buy Now
Silicon Laboratories Inc SI7022-23-EVB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	SI7022-23-EVB		9			1 $83.68 10 $80.33 100 $74.04 1000 $71.08 10000 $71.08	Buy Now
Silicon Laboratories Inc BIOMETRIC-EXP-EVB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	BIOMETRIC-EXP-EVB		8			1 $45.37 10 $45.37 100 $40.14 1000 $38.54 10000 $38.54	Buy Now

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ASE, SILICONE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ASE-375 Abstract: No abstract text available Text: ASE www.vishay.com Vishay Huntington Wirewound Resistors, Industrial Power, Silicone Coated, Adjustable Edgewound Tubular FEATURES • High temperature silicone coating • Complete welded construction • Tight tolerance of 5 % for values above 1  • Excellent stability in operation < 3 % change in	Original	ASE0050 ASE0090 ASE0100 ASE0110 ASE0120 ASE0155 ASE0240 ASE0300 ASE0375 ASE0420 ASE-375	PDF
FSE-240 Abstract: FSE-1500 Text: FVE / FSE EDGEWOUND RESISTORS 40 WATTS THRU 1500 WATTS H.E.I. Edgewound Resistors are are designed for AVE / ASE applications demanding maximum power dissipation in minimum space. Edgewounds are constructed of special alloy resistance wire, crimped, and wound on edge. High quality ceramic cores are used	Original	FSE-40 FSE-50 FSE-90 FSE-100 FSE-110 FSE-120 FSE-155 FSE-240 FSE-300 FSE-375 FSE-240 FSE-1500	PDF
ic 8155 Abstract: "Slide Switch" DP4T SPST TOGGLE SWITCH OR SLIDE SWITCH SP6T switch 94hb ase42 SL220 MSSA204P1 MSSA4350RG miniature slide switch Text: A B ASE/F Series - Page B3 SE Series - Page B9 STS Series - Page B11 TSS Series - Page B18 MSS Series - Page B21 MSSA Series - Page B31 MHS Series - Page B34 SSJ Series - Page B37 Need more technical information? Consult your Thomas & Betts sales office listed on the back cover	Original	MLL1300S ic 8155 "Slide Switch" DP4T SPST TOGGLE SWITCH OR SLIDE SWITCH SP6T switch 94hb ase42 SL220 MSSA204P1 MSSA4350RG miniature slide switch	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . WIREWOUND RESISTORS CW - High Energy Wirewound Resistors, High Energy, Silicone Coated, Axial Lead KEY BENEFITS • • • • • • High continuous energy handling to 106.5 J High-temperature silicone coating	Original	IEC61000-4-5 us/50 CW010. CW005. CW02B. VMN-PT0446-1505	PDF
2SC2023 Abstract: No abstract text available Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor V ICBO VCEO 300 V IEBO VEBO 6 V V BR CEO IC 2 A hFE 2SC2023 Unit VCB=300V 1.0max mA VEB=6V 1.0max mA IC=25mA 300min V VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W	Original	2SC2023 MT-25 300min 30min 10typ 75typ 100x100x2 50x50x2 2SC2023	PDF
2SD2014 Abstract: 2SB1257 FM20 S8010 Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA	Original	2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 150x150x2 2SD2014 2SB1257 FM20 S8010	PDF
2SD2015 Abstract: FM20 Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE sat IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C	Original	2SD2015 120min 2000min 40typ 10max O220F) 2SD2015 FM20	PDF
2SD2015 Abstract: FM20 w605 Text: 2SD2015 Silicon NPN Triple Diffused Planar Transistor V BR CEO IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ	Original	2SD2015 2000min 40typ 100ms 150x150x2 50x50x2 2SD2015 FM20 w605	PDF
Untitled Abstract: No abstract text available Text: 2SC2023 Silicon NPN Triple Diffused Planar Transistor mA V IEBO VEB=6V 1.0max mA 6 V V BR CEO IC=25mA 300min V 2 A hFE VCE=4V, IC=0.5A 30min IB 0.2 A VCE(sat) IC=1.0A, IB=0.2A 1.0max V PC 40(Tc=25°C) W fT VCE=12A, IE=–0.2A 10typ MHz Tj 150 °C COB VCB=10V, f=1MHz	Original	2SC2023 300min 30min 10typ 75typ MT-25 150x150x2 100x100x2 50x50x2	PDF
2SD2014 Abstract: 2SB1257 FM20 Text: 2SD2014 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1257 ICBO VCEO 80 V IEBO VEBO 6 V V(BR)CEO IC 4 A hFE VCE=2V, IC=3A 2000min Conditions Unit VCB=120V 10max µA VEB=6V 10max mA IC=10mA 80min V 10.1±0.2 IB 0.5 A VCE(sat) IC=3A, IB=3mA	Original	2SD2014 2SB1257) O220F) 2000min 10max 80min 75typ 45typ 2SD2014 2SB1257 FM20	PDF
2SD1796 Abstract: relay 12v 3a datasheet FM20 Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor IC 4 A hFE 10max mA VEB=6V IC=10mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A	Original	2SD1796 2000min 60typ 150x150x2 50x50x2 2SD1796 relay 12v 3a datasheet FM20	PDF
2SD1796 Abstract: FM20 Text: 2SD1796 Built-in Avalanche Diode for Surge Absorbing Darlington Silicon NPN Triple Diffused Planar Transistor 4 A hFE mA 60±10 VCE=4V, IC=3A 2000min V 0.5 A VCE sat IC=3A, IB=10mA 1.5max V PC 25(Tc=25°C) W fT VCE=12V, IE=–0.2A 60typ MHz Tj 150 °C COB	Original	2SD1796 2000min 60typ 150x150x2 50x50x2 2SD1796 FM20	PDF
FSE12 Abstract: FSE-300 FSE-240 FSE-1500 ASE, silicone Text: EDGEWOUND FIXED and ADJUSTABLE VITREOUS and SILICONE FVE FSE AVE ASE 40 WATTS thru ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ • • * • WATT FSE-40 FSE-50 FSE-90 FSE-100 FSE-110 FSE-120 FSE-155 FSE-240 FSE-300 FSE-375 FSE-420 FSE-500 FSE-750 FSE-1000 FSE-1500	OCR Scan	FSE-40 FSE-50 FSE-90 FSE-100 FSE-110 FSE-120 FSE-155 FSE-240 FSE-300 FSE-375 FSE12 FSE-1500 ASE, silicone	PDF
STA411A Abstract: TIC 160 M TIC 31 DDD11E Text: SANKEN ELECTRIC CO LTD SSE ]> 7^0741 DDD11EÔ LTT « S A K J STA411A Silicon NPN Triple Diffused Planar •Maximum Ratings . Item Ta = 25“C Symbol Ratings Unit Collector-to-B ase Voltage VCBO 60 V C ollector-to-E m itter Voltage VCEO 60 V Em itter-to-Base Voltage	OCR Scan	DDD11EÔ STA411A STA300 STA400 45max STA411A TIC 160 M TIC 31 DDD11E	PDF

Untitled Abstract: No abstract text available Text: FAST RECOVERY MINIBRIDGE 10 AMPERES - TAB TERMINALS SIN G LE-PH ASE FULL-WAVE BRIDGES HEAT SINK AND C H A SSIS MOUNTING PKR-F SERIES PRV/leg 50V 100 V 200V Type No. P K R 0 5F PKR10F PK R 2 0 F PKR40F 1 000V 600 V 800 V PKR60F PKR80F 400V PKR100F ELECT RICA L C H A R A C T ER IST IC S PER LEG	OCR Scan	PKR10F PKR60F PKR80F PKR40F PKR100F	PDF
Untitled Abstract: No abstract text available Text: FAST RECOVERY MINIBRIDGE 8 AMPERES SIN G LE-PH ASE FULL-WAVE BRIDGES HEAT SINK AND C H A SSIS MOUNTING PKR S E R IE S PRV/leg 50V 100V 200V 400V 600V 800V 1000V Type No. PKR05 PKR 10 PKR 20 PKR40 PKR 60 PKR 80 PKR100 E L E C T R IC A L C H A R A C T E R IS T IC S PER LEG	OCR Scan	PKR05 PKR40 PKR100	PDF
Untitled Abstract: No abstract text available Text: HMC137 WL kh ^ M ICRO W AVE C O RPO RA TIO N GaAs MMIC BI-PHASE MODULATOR 6 -1 1 GHz FE B R U A R Y 1998 Features General Description CH IP INTEGRATES DIREC TLY INTO MIC DESIG NS T h e H M C 1 3 7 B i-P h ase M o d u lato r is designed to p h a se -m o d u la te an R F signal into re feren ce	OCR Scan	HMC137 T0G4125	PDF
MPX 200 kPa motorola Abstract: 201D 2200DP 2200A Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 200 kPa On-Chip Temperature Compensated & Calibrated Pressure Sensors The M PX2200 and MPX2201 series device is a silicon piezoresistive pressure sensor providing a highly accurate and linear voltage output — directly proportional to the	OCR Scan	PX2200 MPX2201 MPX2200 2201G MPX 200 kPa motorola 201D 2200DP 2200A	PDF
ASTM E235 Abstract: wj 5 smd 5962h9215301 QML-38535 SRAM TTL GDIP1-T28 LOR2568 LOR2568C ut7156c70pbar UT7156C55PBAR Text: REVISIO N S LTR D ESC R IPTIO N D ATE YR-MO-DA A P P R O V ED Update boilerplate. Add devices 13 and 14. Add case outlines P and 9. Add C A G E 52088 as source of supply for devices 13 and 14. Editorial changes	OCR Scan	5962-R259-94. 5962-R097-96 5962-R122-96 96-0endor ASTM E235 wj 5 smd 5962h9215301 QML-38535 SRAM TTL GDIP1-T28 LOR2568 LOR2568C ut7156c70pbar UT7156C55PBAR	PDF
cw53 Abstract: No abstract text available Text: A COMPANY MODEL CW W irewound Resistors OF DALE C o a te d FEATURES • High performance for low cost • Complete welded construction • High-temperature silicone coating E L E C T R IC A L S P E C IF IC A T IO N S STANDARD ELECTRIC AL SPECIFICATIONS POWER RATING	OCR Scan	1-167k CW-2C-14 CW-10 CW-10-3 cw53	PDF
D44R4 Abstract: D44R2 D44R8 D44R1 D44R3 D44R7 D44R D44R5 D44R6 Text: Silicon Power Pac Transistors HIGH VOLTAGE The General Electric D44R is a red, silicone encapsulated, power transistor designed for various specific and general purpose applications such as: 120 V.A.C. line operated amplifiers; series, shunt and switching regulators; low thru high frequency inverters/	OCR Scan	T0-220 D44R4 D44R2 D44R8 D44R1 D44R3 D44R7 D44R D44R5 D44R6	PDF
QS113 Abstract: S3590 S692 Text: Dimensional Outlines The lead intervals shown in the dimensinal outlines are center-to-center dimensions at the root of the leads. Dimensions are typical values unless otherwise specified. The values in parentheses are reference values. U nit: m m S2386-18L	OCR Scan	S1226-18BQ, S2386-18L S5821-01, G1115 GT735 G1961 S1190 S2366-18K KPINAQ051EA KPINA0052EA QS113 S3590 S692	PDF
7100A Abstract: 7100D PX71 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 0 to 100 kPa 0 to 14.5 PSI High Zin> On-Chip Temperature Compensated & Calibrated, Silicon Pressure Sensors M PX7100 SERIES M otorola Preferred Devices The new MPX7100 series pressure sensor incorporates all the innovative features of	OCR Scan	MPX7100 MPX2000 PX7100 PX7100A X7100D PX7100G 7100G 7100A 7100D PX71	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 0 to 10 kPa 0 to 1.45 PSI On-Chip Tem perature Compensated & Calibrated, Silicon Pressure Sensors MPX2010 MPX2012 SERIES Motorola Preferred Devices The MPX2010 and MPX2012 series silicon plezoresistive pressure sensors provide a	OCR Scan	MPX2010 MPX2012 X2012D PX2010G PX2012G 2010G 2012G X2010D	PDF

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ASE, SILICONE Search Results

ASE, SILICONE Result Highlights (5)

ASE, SILICONE Price and Stock

Silicon Storage Technology SST28SF040-150-4C-NH

Deltrol Controls 70084-05

Carling Technologies VB1-01-SILICONE-BOOT-BLACK

Silicon Laboratories Inc SI7022-23-EVB

Silicon Laboratories Inc BIOMETRIC-EXP-EVB

ASE, SILICONE Datasheets Context Search

ASE-375

FSE-240

ic 8155

Untitled

2SC2023

2SD2014

2SD2015

2SD2015

Untitled

2SD2014

2SD1796

2SD1796

FSE12

STA411A

Untitled

Untitled

Untitled

MPX 200 kPa motorola

ASTM E235

cw53

D44R4

QS113

7100A

Untitled