1n4733a zener diode
Abstract: No abstract text available
Text: WILLAS SCS50 VOLTAG 0.1AMP Schottky DATA SHEET Pb Free Product FEATURES SOD-323 GLASS PASSIVATED JUNCTION SILICON ZENER DIODE .012 0.3 * Extremely Low VF * Majority carrier conduction • Low profile package .112 (2.85) * Low stored charge FEATURES • Built-in strain relief
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1N4728A
1N4764A
OD-323
DO-41G
1n4733a zener diode
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zener diode 1N4742
Abstract: 1N475A
Text: Silicon zener diodes. 1 Watt The plastic material carries U/L recognition 94V-0. 1N4728/SZ19 S e n « . 1 Watt. C ase: DO-41/SMA Outline: 2/7 Nominal Zener Voltage TYPE Axial Lead 1N4728 1N4729 1N4730 1N4731 1N4732 1N4733 1N4734 1N473S 1N4736 1N4737 1N4738
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1N4728/SZ19
DO-41/SMA
1N4728
1N4729
1N4730
1N4731
1N4732
1N4733
1N4734
1N473S
zener diode 1N4742
1N475A
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DS18005
Abstract: ZMM5V6 ST ZMM9V1 ST
Text: ZMM2V4 - ZMM75 500mW SURFACE MOUNT ZENER DIODES Features • • • • Planar Die C onstruction Sealed G lass Case Ideally Suited fo r Autom ated Insertion 2.4V - 75V Nom inal Zener V oltages Mechanical Data_ • • • • MiniMELF C ase: M iniM ELF, Glass
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ZMM75
500mW
200mA
DS18005
ZMM2V4-ZMM75
ZMM5V6 ST
ZMM9V1 ST
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Untitled
Abstract: No abstract text available
Text: S G S -ÏH O M S O N KÆ0ra@[EL[iûre ^0 i BZV47C5V1 / 200 2W ZENER DIODES FEATURES • VOLTAGE RANGE :5 .1 V to 200 V ■ HERMETICALLY SEALED P LA S TIC C ASE: F126 PACKAGE ■ HIGH SURGE C A P A B ILITY : 55 W 10 m s . DESCRIPTION 2 W silicon Zener diodes.
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BZV47C5V1
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bzv 06
Abstract: bzv 4v7 ZENER DIODES BZV 48 bzv 46 bzv 40 ZENER DIODES BZV 48 5V1 bzv 4v3 BZV48C13 ZENER DIODES BZV 85 8V2 zener 6v8
Text: y zener diodes diodes zener 1H0MS0N-CSF Types Tamb Il / Tj max 3,1 3 ,4 3 ,7 4 ,0 4 ,4 3 ,5 3 ,8 ' z t / 'z t m ax 'ZT Q (m A) = 175°C ocvz typ (%/°C) •r / V r m ax A) Vr ■ZM (V) (mA) C ase V F < 1 ,2 V < T am b = 25°C, lF = 0,3A) P § (10 m i) = 200 W
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CD40468
Abstract: CD4046BCN cd4046bc L50115 CD4046B resistor arry CD4046BM c04046 FM MODULATOR CD4046B Zener diode 0740
Text: November 1995 Semiconductor C D 40 46 B M /C D 4 04 6B C M icro p o w er P h ase-Locked Loop General Description The CD4046B micropower phase-locked loop PLL con sists of a low power, linear, voltage-controlled oscillator (VCO), a source follower, a zener diode, and two phase
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CD4046BM/CD4046BC
CD4046B
CD40468
CD4046BCN
cd4046bc
L50115
resistor arry
CD4046BM
c04046
FM MODULATOR CD4046B
Zener diode 0740
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Untitled
Abstract: No abstract text available
Text: 2SD2323 Silicon NPN Triple Diffused H ITA C H I Application High voltage switching, igniter Features • Built-in High voltage zener diode 300 V • High speed switching Outline T O -2 2 0 F M JÜL 2 B ase 1• 12 3 2. C o lle c to r 3. E m itte r ° t Xt
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2SD2323
25Hitachi
D-85622
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Z17D
Abstract: Z27D Z24D Z11D 6/18/Z11D
Text: Silicon zener diodes. 3 Watts T he plastic m aterial c arrie s U /L reco g n itio n 9 4 V -0 . 3 E Z 3 .9 0 5 /S Z 5 5 S e n e s . 3 .0 W atts. C ase ; D O -41/SM A O utline î 2/7 N om inal Z ener V oltage TYPE A xial Lead | S.M .D . M axim um R everse L eakage C urrent
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-41/SM
SZ180D
3EZ200D
T00547c
Z17D
Z27D
Z24D
Z11D
6/18/Z11D
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K2134
Abstract: IN3344 IN3324 1N4564 1N3305 E5450 1N2804 4556 AD 8 PIN
Text: 1N2804 thru 1N2846 1N3305thru 1N3350 1N4549thru 1N4556 1N4557thru 1N4564 6.8V thru 200V C a se 54 (^ ) M O T O R O L A 6.8V thru 200V (C a s e 58) 3.9V thru 7.5V (C a se 58) ZENER DIODES 3.9V thru 7.5V (C a s e 54) U n its are a v a ila b le w ith an od e-to *case and cath o d e -to -case
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1N2804
1N2846
1N3305thru
1N3350
1N4549thru
1N4556
1N4557thru
1N4564
K2134
IN3344
IN3324
1N4564
1N3305
E5450
4556 AD 8 PIN
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ic 2028
Abstract: 2028b IC 2803
Text: ¡^Ordering num ber: EN 2803 2SD2028 No.2803 NPN Epitaxial P lana r Silicon T ransistor Low-Frequency Power Amp A pplications F eatures • With Zener diode 11 ± 3V between collector and base •Large cu rren t capacity ■Low collector to em itter satu ra tio n voltage
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2SD2028
2SD2028-applied
2SD2028
44-fiJS
D148MO
ic 2028
2028b
IC 2803
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Untitled
Abstract: No abstract text available
Text: ZMUIOO . Z M U 180 ^Cathode Mark 1 J Silicon Planar Zener Diodes for use in stabilizing and clipping circuits with higher power rating. — 1 The Zener voltages are graded according to the international E 12 standard. Sm aller voltage tolerances on request.
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DO-41
ZPU180.
ZMU100
ZMU120
ZMU150
ZMU180
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Knox Semiconductor
Abstract: zener K270 K300 K120 K150 K180 K210 K240 K270 K330
Text: K n o x S e m ic o n d u c t o r , I n c A unique manufacturing process allows Knox Semiconductor to supply a range o f Very Low Voltage Diodes having the lowest reverse leakage currents and low impedance at currents specified at 10 mA and below. These devices
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QQ0Q24Q
DO-35
Knox Semiconductor
zener K270
K300
K120
K150
K180
K210
K240
K270
K330
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55C 2v4
Abstract: SGS-THOMSON ZENER DIODES zener 2v4 BZX 55C
Text: SU FFIXES Q.ty per unit packaging REE A M M OPAK 63 mm 53 mm 26 mm BAND W IDTH BULK RADIAL TAPING AXIAL TAPING j 16 mm FILM 12 mm FILM FILM 8 mm j ZENER DIODES PACKAGING 0.5 W Devices • • • DO 35 • • • • • • DO 35 Low Efficiency • DO 35 High Efficiency
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C 125t Zener diode
Abstract: 1EZ110D5 1EZ120D5 1EZ130D5 1EZ140D5 1EZ150D5 1EZ160D5 1EZ170D5 1EZ180D5 1EZ190D5
Text: 1EZ110D5 thru Microsemi Corp. 1EZ200D5 The ûiode experts SCOTTSDALE, .47. For m ore inform ation call: 602 941-6300 SILICON 1 WATT ZEN ER DIODE FE A T U R E S • ZENER VOLTAGE 110 V TO 200 V • W ITH STAN DS LARGE SURGE S T R E SS E S • ALSO AVAILABLE IN GLASS. (See Note 6.)
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1EZ110D5
1EZ200D5
1EZ110D5
1GZ110D5
C 125t Zener diode
1EZ120D5
1EZ130D5
1EZ140D5
1EZ150D5
1EZ160D5
1EZ170D5
1EZ180D5
1EZ190D5
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automatic motor for reverse and forward
Abstract: FP1016 LB1645 LB1640 ac motor forward reverse control LB1687N c+9050+60001,+motor LB1651
Text: Continued rrom previous page Package Device Number of tDrawing Type pins and number configuration Description Features LA5528N M M FP 8 30 3 2 B C om p act D C motor driver Miniflat p ac ka ge version of the L A 5 5 2 8 N LA5540 S IP 4H 3027A Regulator, motor driver with brake
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30SLF
3006B
3036B
3001B
LA5528N
LA5540
LA5550M
LB1609
LB1619M
LB1620
automatic motor for reverse and forward
FP1016
LB1645
LB1640
ac motor forward reverse control
LB1687N
c+9050+60001,+motor
LB1651
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Untitled
Abstract: No abstract text available
Text: v G eneral S e m ic o n d u c t o r 1N5225 thru 1N5267 Zener Diodes Zener Voltage Range: 3.0 to 75V Power Dissipation: 500mW D0-204AH DO-35 Glass Features »Silicon Planar Power Zener Diodes. max. 0.079 (2.0) (0 E -Cathode Mark * Standard Zener voltage tolerance is ± 5 % with a “B ”
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1N5225
1N5267
500mW
D0-204AH
DO-35
ZMM5267,
Z5265
Z5267
D7/10K
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ZPU120
Abstract: No abstract text available
Text: ZPU100.ZPU180 Silicon P la n a r Z e n er Diodes for use in stabilizing and clipping circuits with higher power rating. max. 02.5 The Zener voltages are graded according to the international E 12 standard. Smaller voltage tolerances on request. - C athode
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ZPU100.
ZPU180
ZMU180.
DO-41
ZPU100
ZPU100
ZPU120
2PU150
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1N4057
Abstract: No abstract text available
Text: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 1N4057 thru 1N4085A HIGH VOLTAG E TEM PERATURE CO M PENSA TED ZENER DIODES Zener Voltage = 12.4 to 200 Volts ELECTRICAL CHARACTERISTICS f JEDEC TYPE N UMBER ZE N E R VOLTAGE ±5% Note 1 v z@ i2T
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1N4057
1N4085A
1N4057A
1N4058
1N4058A
1N4059
1N4059A
1N4060
1N4060A
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Untitled
Abstract: No abstract text available
Text: I n ter n a t/ onal S e m ic o n d u c t o r I n c . 1N5728B thru 1N5757B 400 M ILLIW ATT H ER M ETIC ALLY SEALED G LASS SILICON ZENER DIODES M A X IM U M R A TIN G S Junct i on Temperat ure: Storage Temperature: DC Power Dissipation: Power Derating: Forward Vol tage
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1N5728B
1N5757B
1N5728A
TaDD37fl
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR E65A27VBS, E65A27VBR T E C H N I C A L DATA ST A C K S ILICO N DIFFUSED DIODE A L T E R N A T O R DIODE FOR A U T O M O T IV E A PPLICATION. FEA TU RES • Average Forward C u rre n t: ]0=65A. • Zener Voltage : 27V Typ. POLARITY E65A27VBS ( + Type)
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E65A27VBS,
E65A27VBR
E65A27VBS
45oltag
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IN5240
Abstract: in5239 in5242 IN5243 IN5228 in5247 zener diode IN5227 1N5110 1N5104 IN5245
Text: Zener Voltage at I zt Volts @ mA Zener Type No. Max. Zener Impedance @ I zt Ohms Zener Voltage Tolerance Power Rating 3 w att " " 1 N 51 02 1 N 51 03 1 N 51 04 180.0 190.0 200.0 4.0 8 50 .0 900.0 950.0 ±5% 1 N 51 05 1 N 51 06 1 N 51 07 220.0 240.0 260.0 3.0
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1N5102
1N5103
1N5104
1N5105
1N5106
1N5107
1N5108
1N5109
1N5110
1N5111
IN5240
in5239
in5242
IN5243
IN5228
in5247 zener diode
IN5227
IN5245
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2SD2010
Abstract: No abstract text available
Text: 2SD2010 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • built-in 60 V Zener diode between collector and base • resistant to surges • damper diode incorporated j_o • built-in resistors between base and emitter
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2SD2010
2SD2010,
2SD2010
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iz10
Abstract: No abstract text available
Text: SEMICONDUCTOR E50A27VBS, E50A27VBR T E C H N I C A L DATA ST A C K S ILICO N DIFFUSED DIODE A L T E R N A T O R DIODE FOR A U T O M O T IV E A PPLICATION. FEA TU RES • Average Forward Current : ]o=50A. • Zener Voltage : 27V Typ. DIM POLARITY E50A27VBS ( + Type)
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E50A27VBS,
E50A27VBR
E50A27VBS
iz10
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Untitled
Abstract: No abstract text available
Text: SEM ICO NDUCTO R TECHNICAL DATA E50A21VBS, E50A21VBR STACK SILICON DIFFUSED DIODE A L T E R N A T O R D IO D E FO R A U T O M O T IV E A P P L IC A T IO N . FEA TU RES • Average Forward C urrent: ]o=50A. • Zener Voltage : 21 V Typ. P O L A R IT Y E50A21VBS (+ Type)
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E50A21VBS
E50A2IVBR
E50A21VBS,
E50A21VBR
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