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    AT49 FLASH MEMORY Search Results

    AT49 FLASH MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AT49BV640D-70CI Rochester Electronics LLC AT49BV640D - 64-Mbit (4M x 16), Sectored Flash Visit Rochester Electronics LLC Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy

    AT49 FLASH MEMORY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AT49

    Abstract: AT49 FLASH MEMORY atmel at49 atmel 8A AT49X002
    Text: Recommended Reprogramming Procedure for Atmel’s Flash Memories The AT49X001 N (T), AT49X002(N)(T), AT4 9X 204 8A( T) , AT49 X4 096 A( T) , AT49X8192A(T) (the X designation could refer to BV, LV, or F) are sectored Flash memory devices. The memory array of each device is divided into multiple sectors, which can be used to store


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    PDF AT49X001 AT49X002 AT49X8192A AT49X2048A AT49X4096A 05/00/xM AT49 AT49 FLASH MEMORY atmel at49 atmel 8A

    LV0101

    Abstract: AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010
    Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds


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    PDF BV010 LV010 0677E 11/99/xM LV0101 AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010

    DOWNLOAD AT49 FLASH MEMORY PDF FILE

    Abstract: AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 ATMEL AT49
    Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds


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    PDF BV010 LV010 0677E 11/99/xM DOWNLOAD AT49 FLASH MEMORY PDF FILE AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 ATMEL AT49

    AT49

    Abstract: AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 ATMEL AT49 AT49BV/LV010
    Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds


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    PDF BV010 LV010 0677D 07/99/xM AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 ATMEL AT49 AT49BV/LV010

    AT49 FLASH MEMORY

    Abstract: AT49 FLASH MEMORY FILE AT49 AT49BV010-12TI AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 2532j
    Text: AT49 H BV/(H)LV01 Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds


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    PDF BV010 LV010 AT49HLV010-70JC AT49HLV010-70TC AT49HLV010-70JI AT49HLV010-70TI AT49HLV010-90JC AT49HLV010-90TC AT49HLV010-90JI AT49HLV010-90TI AT49 FLASH MEMORY AT49 FLASH MEMORY FILE AT49 AT49BV010-12TI AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 2532j

    atmel at49

    Abstract: AT49 FLASH MEMORY AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010
    Text: Features • • • • • • • • • • Single Supply Voltage Range, 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds


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    PDF BV010 LV010 0677C 10/98//xM atmel at49 AT49 FLASH MEMORY AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010

    atmel 8086

    Abstract: 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010
    Text: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Application Note October 2005 Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It


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    PDF SST39VF080 AT49LV008A-based S72014-04-000 atmel 8086 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010

    Untitled

    Abstract: No abstract text available
    Text: Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-by-byte Programming - 30 ns/Byte typical


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    PDF BV010 LV010 0677D 07/99/xM

    Untitled

    Abstract: No abstract text available
    Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Tim e - 45 ns Internal Program Control and Tim er 8K word Boot Block With Lockout Fast Erase Cycle Tim e - 1 0 seconds Word By Word Programming - 1 0 us/Word Typical Hardware Data Protection


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    PDF AT49F1024 AT49F1025 1025-70VC AT49F1025-55VI AT49F1025-55JC AT49F1025-55VC F1025-50J AT49F1025-50VC AT49F1025-45JC F1025-45V

    Untitled

    Abstract: No abstract text available
    Text: Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte By Byte Programming - 30 |is/Byte typical


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    PDF BV010 LV010 o010-55TI AT49H 010-70JC LV010-70TC LV010-70JI LV010-70TI 010-90JC

    Untitled

    Abstract: No abstract text available
    Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Tim e - 45 ns Internal Program Control and Tim er 8K Word Boot Block With Lockout Fast Erase Cycle Tim e - 1 0 seconds Word-By-Word Programming -1 0 us/Word Typical Hardware Data Protection


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    PDF AT49F1024 AT49F1025 1025-90VC AT49F1025-90JI 1025-90VI AT49F1025-55VI AT49F1025-55VC AT49F1025-55JC 0000H

    Untitled

    Abstract: No abstract text available
    Text: Features * * * * * * * * * * Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte By Byte Programming - 30 |_is/Byte typical


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    PDF AT49HLV010-70JC AT49HLV010-70TC AT49HLV010-70JI AT49HLV010-70TI AT49HLV010-90JC AT49HLV010-90TC AT49HLV010-90JI AT49HLV010-90TI AT49LV010-12JC AT49LV010-12TC

    78XXX

    Abstract: AT49B AT12T T49B
    Text: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 496K Words (992K bytes) Main Memory Array Block


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    PDF AT49BV008A AT49BV8192A of48T, 48-Lead, MO-142 48-Ball, /8192A 78XXX AT49B AT12T T49B

    32-LEA

    Abstract: No abstract text available
    Text: Features * * * * * * * * * * Single Supply Voltage Range, 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte-By-Byte Programming - 30 ps/Byte typical


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    PDF 0677C /98//X 32-LEA

    Untitled

    Abstract: No abstract text available
    Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte By Byte Programming - 50 |is/Byte Hardware Data Protection


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    PDF AT49F040 24-Ball

    49f080

    Abstract: No abstract text available
    Text: Features * Single Voltage Operation - 5V Read - 5V Reprogramming • Fast Read Access Time - 90 ns • Internal Program Control and Timer * 16K bytes Boot Block With Lockout • Fast Erase Cycle Time -1 0 seconds • Byte-By-Byte Programming -1 0 |as/Byte Typical


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    PDF AT49F080 AT49F080T-90CI AT49F080T-90RI AT49F080T-90TI AT49F080T-12CC AT49F080T-12RC AT49F080T-12TC AT49F080T-12CI AT49F080T-12RI AT49F080T-12TI 49f080

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    PDF 48-ball, AT49BV1604

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    Abstract: No abstract text available
    Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 90 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte-By-Byte Programming -1 0 |is/Byte Typical Hardware Data Protection


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    PDF AT49F080 commercia-15TC AT49F080T-15CC AT49F080T-15RC AT49F080T-12TI AT49F080T-12CI AT49F080T-12RI AT49F080T-12TC AT49F080T-12RC AT49F080T-90TI

    F008A-90CI

    Abstract: AT49F008AT-12TC F008 at49 AT49F008A AT49F8192A a12t AT49F8192A-70TI F008A
    Text: Features • Single Voltage Operation - 5V Read - 5V Programming • Fast Read Access Time - 70 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks


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    PDF AT49F008A AT49F8192A 1199Dâ 08/99/xM F008A-90CI AT49F008AT-12TC F008 at49 a12t AT49F8192A-70TI F008A

    AT49LV040-12JC

    Abstract: AT-49 AT49BV040 AT49BV040T AT49LV040 AT49LV040T at49 at49lv04012ti TSOP8 AT49 FLASH MEMORY FILE
    Text: Features Single Voltage for Read and W rite: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Tim e -1 2 0 ns Internal Program Control and Tim er 16K Bytes Boot Block With Lockout Fast Chip Erase Cycle Tim e -1 0 seconds Byte-by-Byte Programming - 30 ns/Byte Typical


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    PDF AT49BV/LV040 32-Lead, MO-142 AT49LV040-12JC AT-49 AT49BV040 AT49BV040T AT49LV040 AT49LV040T at49 at49lv04012ti TSOP8 AT49 FLASH MEMORY FILE

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    PDF 0925Hâ 08/99/xM

    AT49BV1614-11 TC

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K word 64K byte Sectors with Individual Write Lockout - Eight 4K word (8K byte) Sectors with Individual Write Lockout - Two 16K word (32K byte) Sectors with Individual Write Lockout


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    PDF 48-Ball, AT49BV1614-11 TC

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout


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    PDF 32KWord Reading/P18 48-ball, AT49BV1604

    Untitled

    Abstract: No abstract text available
    Text: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture - Thirty 32K Word 64K byte Sectors with Individual Write Lockout - Eight 4K Word (8K byte) Sectors with Individual Write Lockout - Two 16K Word (32K byte) Sectors with Individual Write Lockout


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    PDF 0977H-- 08/99/xM