AT49
Abstract: AT49 FLASH MEMORY atmel at49 atmel 8A AT49X002
Text: Recommended Reprogramming Procedure for Atmel’s Flash Memories The AT49X001 N (T), AT49X002(N)(T), AT4 9X 204 8A( T) , AT49 X4 096 A( T) , AT49X8192A(T) (the X designation could refer to BV, LV, or F) are sectored Flash memory devices. The memory array of each device is divided into multiple sectors, which can be used to store
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AT49X001
AT49X002
AT49X8192A
AT49X2048A
AT49X4096A
05/00/xM
AT49
AT49 FLASH MEMORY
atmel at49
atmel 8A
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LV0101
Abstract: AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010
Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds
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Original
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PDF
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BV010
LV010
0677E
11/99/xM
LV0101
AT49
AT49BV010
AT49HBV010
AT49HLV010
AT49LV010
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DOWNLOAD AT49 FLASH MEMORY PDF FILE
Abstract: AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 ATMEL AT49
Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds
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Original
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PDF
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BV010
LV010
0677E
11/99/xM
DOWNLOAD AT49 FLASH MEMORY PDF FILE
AT49
AT49BV010
AT49HBV010
AT49HLV010
AT49LV010
ATMEL AT49
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AT49
Abstract: AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 ATMEL AT49 AT49BV/LV010
Text: Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time – 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time – 10 seconds
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Original
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PDF
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BV010
LV010
0677D
07/99/xM
AT49
AT49BV010
AT49HBV010
AT49HLV010
AT49LV010
ATMEL AT49
AT49BV/LV010
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AT49 FLASH MEMORY
Abstract: AT49 FLASH MEMORY FILE AT49 AT49BV010-12TI AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010 2532j
Text: AT49 H BV/(H)LV01 Features • • • • • • • • • • Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds
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Original
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PDF
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BV010
LV010
AT49HLV010-70JC
AT49HLV010-70TC
AT49HLV010-70JI
AT49HLV010-70TI
AT49HLV010-90JC
AT49HLV010-90TC
AT49HLV010-90JI
AT49HLV010-90TI
AT49 FLASH MEMORY
AT49 FLASH MEMORY FILE
AT49
AT49BV010-12TI
AT49BV010
AT49HBV010
AT49HLV010
AT49LV010
2532j
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atmel at49
Abstract: AT49 FLASH MEMORY AT49 AT49BV010 AT49HBV010 AT49HLV010 AT49LV010 LV010
Text: Features • • • • • • • • • • Single Supply Voltage Range, 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds
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Original
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PDF
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BV010
LV010
0677C
10/98//xM
atmel at49
AT49 FLASH MEMORY
AT49
AT49BV010
AT49HBV010
AT49HLV010
AT49LV010
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atmel 8086
Abstract: 49f020 Am29 Flash Family m29F DATASHEET sst 90 AT49 SST39SF010A SST39SF020A AM29F002 SST39VF010
Text: Designing In SST’s Multi-Purpose Flash 39 Series Byte-wide Products Application Note October 2005 Designing In SST’s Multi-Purpose Flash (39 Series) Byte-wide Products INTRODUCTION This application note introduces the SST 39 series - SST’s mainstream Multi-Purpose Flash (MPF) product line. It
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SST39VF080
AT49LV008A-based
S72014-04-000
atmel 8086
49f020
Am29 Flash Family
m29F DATASHEET
sst 90
AT49
SST39SF010A
SST39SF020A
AM29F002
SST39VF010
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Untitled
Abstract: No abstract text available
Text: Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte-by-byte Programming - 30 ns/Byte typical
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OCR Scan
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PDF
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BV010
LV010
0677D
07/99/xM
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Untitled
Abstract: No abstract text available
Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Tim e - 45 ns Internal Program Control and Tim er 8K word Boot Block With Lockout Fast Erase Cycle Tim e - 1 0 seconds Word By Word Programming - 1 0 us/Word Typical Hardware Data Protection
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OCR Scan
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PDF
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AT49F1024
AT49F1025
1025-70VC
AT49F1025-55VI
AT49F1025-55JC
AT49F1025-55VC
F1025-50J
AT49F1025-50VC
AT49F1025-45JC
F1025-45V
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Untitled
Abstract: No abstract text available
Text: Features Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte By Byte Programming - 30 |is/Byte typical
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OCR Scan
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PDF
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BV010
LV010
o010-55TI
AT49H
010-70JC
LV010-70TC
LV010-70JI
LV010-70TI
010-90JC
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Untitled
Abstract: No abstract text available
Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Tim e - 45 ns Internal Program Control and Tim er 8K Word Boot Block With Lockout Fast Erase Cycle Tim e - 1 0 seconds Word-By-Word Programming -1 0 us/Word Typical Hardware Data Protection
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OCR Scan
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PDF
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AT49F1024
AT49F1025
1025-90VC
AT49F1025-90JI
1025-90VI
AT49F1025-55VI
AT49F1025-55VC
AT49F1025-55JC
0000H
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Untitled
Abstract: No abstract text available
Text: Features * * * * * * * * * * Single Supply Voltage, Range 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte By Byte Programming - 30 |_is/Byte typical
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OCR Scan
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PDF
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AT49HLV010-70JC
AT49HLV010-70TC
AT49HLV010-70JI
AT49HLV010-70TI
AT49HLV010-90JC
AT49HLV010-90TC
AT49HLV010-90JI
AT49HLV010-90TI
AT49LV010-12JC
AT49LV010-12TC
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78XXX
Abstract: AT49B AT12T T49B
Text: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 496K Words (992K bytes) Main Memory Array Block
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OCR Scan
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PDF
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AT49BV008A
AT49BV8192A
of48T,
48-Lead,
MO-142
48-Ball,
/8192A
78XXX
AT49B
AT12T
T49B
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32-LEA
Abstract: No abstract text available
Text: Features * * * * * * * * * * Single Supply Voltage Range, 2.7V to 3.6V Single Supply for Read and Write Fast Read Access Time - 55 ns Internal Program Control and Timer 8K Bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte-By-Byte Programming - 30 ps/Byte typical
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OCR Scan
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PDF
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0677C
/98//X
32-LEA
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Untitled
Abstract: No abstract text available
Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 70 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte By Byte Programming - 50 |is/Byte Hardware Data Protection
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OCR Scan
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PDF
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AT49F040
24-Ball
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49f080
Abstract: No abstract text available
Text: Features * Single Voltage Operation - 5V Read - 5V Reprogramming • Fast Read Access Time - 90 ns • Internal Program Control and Timer * 16K bytes Boot Block With Lockout • Fast Erase Cycle Time -1 0 seconds • Byte-By-Byte Programming -1 0 |as/Byte Typical
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OCR Scan
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PDF
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AT49F080
AT49F080T-90CI
AT49F080T-90RI
AT49F080T-90TI
AT49F080T-12CC
AT49F080T-12RC
AT49F080T-12TC
AT49F080T-12CI
AT49F080T-12RI
AT49F080T-12TI
49f080
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Untitled
Abstract: No abstract text available
Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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OCR Scan
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PDF
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48-ball,
AT49BV1604
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Untitled
Abstract: No abstract text available
Text: Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 90 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Erase Cycle Time -1 0 seconds Byte-By-Byte Programming -1 0 |is/Byte Typical Hardware Data Protection
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OCR Scan
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PDF
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AT49F080
commercia-15TC
AT49F080T-15CC
AT49F080T-15RC
AT49F080T-12TI
AT49F080T-12CI
AT49F080T-12RI
AT49F080T-12TC
AT49F080T-12RC
AT49F080T-90TI
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F008A-90CI
Abstract: AT49F008AT-12TC F008 at49 AT49F008A AT49F8192A a12t AT49F8192A-70TI F008A
Text: Features • Single Voltage Operation - 5V Read - 5V Programming • Fast Read Access Time - 70 ns • Internal Erase/Program Control • Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks
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OCR Scan
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PDF
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AT49F008A
AT49F8192A
1199Dâ
08/99/xM
F008A-90CI
AT49F008AT-12TC
F008
at49
a12t
AT49F8192A-70TI
F008A
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AT49LV040-12JC
Abstract: AT-49 AT49BV040 AT49BV040T AT49LV040 AT49LV040T at49 at49lv04012ti TSOP8 AT49 FLASH MEMORY FILE
Text: Features Single Voltage for Read and W rite: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Tim e -1 2 0 ns Internal Program Control and Tim er 16K Bytes Boot Block With Lockout Fast Chip Erase Cycle Tim e -1 0 seconds Byte-by-Byte Programming - 30 ns/Byte Typical
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OCR Scan
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PDF
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AT49BV/LV040
32-Lead,
MO-142
AT49LV040-12JC
AT-49
AT49BV040
AT49BV040T
AT49LV040
AT49LV040T
at49
at49lv04012ti
TSOP8
AT49 FLASH MEMORY FILE
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Untitled
Abstract: No abstract text available
Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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OCR Scan
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PDF
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0925Hâ
08/99/xM
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AT49BV1614-11 TC
Abstract: No abstract text available
Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K word 64K byte Sectors with Individual Write Lockout - Eight 4K word (8K byte) Sectors with Individual Write Lockout - Two 16K word (32K byte) Sectors with Individual Write Lockout
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OCR Scan
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PDF
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48-Ball,
AT49BV1614-11 TC
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Untitled
Abstract: No abstract text available
Text: Features • 2.7V to 3.3V Read/Write • Access Time - 90 ns • Sector Erase Architecture - Thirty 32K Word 64K Byte Sectors with Individual Write Lockout - Eight 4K Word (8K Byte) Sectors with Individual Write Lockout - Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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OCR Scan
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PDF
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32KWord
Reading/P18
48-ball,
AT49BV1604
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Untitled
Abstract: No abstract text available
Text: Features • 4.5V to 5.5V Read/Write • Access Time - 70 ns • Sector Erase Architecture - Thirty 32K Word 64K byte Sectors with Individual Write Lockout - Eight 4K Word (8K byte) Sectors with Individual Write Lockout - Two 16K Word (32K byte) Sectors with Individual Write Lockout
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OCR Scan
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PDF
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0977H--
08/99/xM
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