Untitled
Abstract: No abstract text available
Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier
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RF3933
RF3933
DS130905
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Untitled
Abstract: No abstract text available
Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier
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RF3934
RF3934
DS131206
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Untitled
Abstract: No abstract text available
Text: RF3931 RF3931 30W GaN Wideband Power Amplifier The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier
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RF3931
RF3931
DS130905
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PDF
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Untitled
Abstract: No abstract text available
Text: RFHA1042 125W GaN Power Amplifier 225MHz to 450MHz The RFHA1042 is optimized for military communications, commercial wireless infrastructure and general purpose applications in the 225MHz to 450MHz frequency band. Using an advanced 48V high power density gallium nitride GaN
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RFHA1042
225MHz
450MHz
RFHA1042
450MHz
DS131023
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Untitled
Abstract: No abstract text available
Text: RF3932 RF3932 60W GaN Wideband Power Amplifier The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific /medical, and general purpose broadband amplifier
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RF3932
RF3932
DS130905
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Untitled
Abstract: No abstract text available
Text: RFHA3944 65W GaN Wide-Band Power Amplifier The RFHA3944 is a 48V, 65W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second
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RFHA3944
RFHA3944
DS131024
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Untitled
Abstract: No abstract text available
Text: RFHA3942 35W GaN Wide-Band Power Amplifier The RFHA3942 is a 48V, 35W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second
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RFHA3942
RFHA3942
DS131204
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Untitled
Abstract: No abstract text available
Text: RFHA3942 35W GaN Wide-Band Power Amplifier The RFHA3942 is a 48V, 35W high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. Using a second
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RFHA3942
RFHA3942
DS131023
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NE6510179A
Abstract: NE65 ms 16881
Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE6510179A
IMT-2000,
24-Hour
NE65
ms 16881
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NE6510179A
Abstract: No abstract text available
Text: NEC's 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE6510179A
IMT-2000,
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smd diode J476
Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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DL110/D
smd diode J476
VIPER L2A RoHS
Viper L2A
mmic amplifier marking code N10
mosfet j279
MRF 966 Mesfet
PIN diode MACOM SPICE model
NCR 2400 SMA DATASHEET Datasheet
MRF 899
smd wb3
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NE6510179A
Abstract: No abstract text available
Text: 1W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE6510179A
IMT-2000,
24-Hour
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PDF
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NE6510179A
Abstract: No abstract text available
Text: 3W, L&S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE Available on Tape and Reel PACKAGE OUTLINE 79A 1.5 – 0.2 4.2 MAX • USABLE TO 3.7 GHz: Fixed Wireless Access, ISM, WLL, MMDS, IMT-2000,
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NE6510179A
IMT-2000,
24-Hour
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MRF374A
Abstract: marking c14a l1a marking
Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
marking c14a
l1a marking
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Untitled
Abstract: No abstract text available
Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal
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CGH35060F1
CGH35060P1
CGH35060F
CGH3506
CGH35
060P1
CGH35060P1
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Z14b
Abstract: Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B
Text: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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MRF374/D
MRF374
Z14b
Z10A
RO3010
Z11A
VJ2225Y
C14A
thermistor C11
Z11B
C12A
C12B
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RO3010
Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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MRF374
31JUL04
31JAN05
RO3010
Z14B
C14A
thermistor r5t
470 860 mhz PCB
transistor R1A
C14B
r1a transistor
transistor z2b
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RO3010
Abstract: j352 transistor j352 bc17a VJ2225Y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF374A
RO3010
j352
transistor j352
bc17a
VJ2225Y
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Untitled
Abstract: No abstract text available
Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal
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CGH35060F1
CGH35060P1
CGH35060F
CGH3506
CGH35
060P1
CGH35060P1
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16312 transistor
Abstract: CGH35060F1-TB
Text: CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35060F ideal
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CGH35060F1
CGH35060P1
CGH35060F
CGH3506
CGH35
060P1
CGH35060P1
16312 transistor
CGH35060F1-TB
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Untitled
Abstract: No abstract text available
Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package
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NPT2010
NPT2010
NDS-034
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Untitled
Abstract: No abstract text available
Text: NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features • Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package
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NPT2010
NPT2010
NDS-034
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transistor R1A 37
Abstract: 5233 mosfet J146 VJ1210y
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
transistor R1A 37
5233 mosfet
J146
VJ1210y
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RO3010
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF372 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this
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MRF372
RO3010
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