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    ATC100B0R4BT500XT Datasheets Context Search

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    transistor j241

    Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
    Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448

    C5750X5R1H106MT

    Abstract: MRF7S21210HS S2116
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 C5750X5R1H106MT MRF7S21210HS S2116

    ATC600 capacitor

    Abstract: MRF7S21170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 ATC600 capacitor MRF7S21170HS

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT21S240-12S Rev. 0, 4/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 55 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.


    Original     		PDF AFT21S240--12S AFT21S240-12SR3

    atc600

    Abstract: 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 5, 4/2008 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 atc600 465B A114 A115 AN1955 JESD22 MRF7S21170HSR3

    0119A

    Abstract: IC/0119A IC/IC/0119A
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 7, 2/2012 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 0119A IC/0119A IC/IC/0119A

    WELWYN c21

    Abstract: No abstract text available
    Text: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 6/2013Semiconductor, WELWYN c21

    atc600

    Abstract: ATC600 CAPACITORS 465B A114 A115 AN1955 JESD22 MRF7S21170HR3 MRF7S21170HSR3 ATC100B0R3BT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 4, 5/2007 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170HR3 atc600 ATC600 CAPACITORS 465B A114 A115 AN1955 JESD22 MRF7S21170HSR3 ATC100B0R3BT500X

    NI-880XS-2

    Abstract: J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S aft18s290-13s AFT18S290 ATC100B0R4BT500XT nichicon HD
    Text: Document Number: AFT18S290−13S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 63 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1995 MHz.


    Original     		PDF AFT18S290-13S AFT18S290-13SR3 20luding NI-880XS-2 J416 J453 C5750X7S2A106M230KB NI-880XS-2L4S AFT18S290 ATC100B0R4BT500XT nichicon HD

    WELWYN c21

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT26HW050S Rev. 2, 7/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 7/2013Semiconductor, WELWYN c21

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 6, 3/2011 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3

    WELWYN resistor C21

    Abstract: WELWYN c21 J-030
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev. 1, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S19210HR3 MRF7S19210HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19210H MRF7S19210HR3 MRF7S19210HSR3 MRF7S19210H WELWYN resistor C21 WELWYN c21 J-030

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26HW050S Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 5/2013Semiconductor,

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 MRF7S21210HR3

    222212018471

    Abstract: A114 A115 AN1955 C101 JESD22 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19210H Rev. 0, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19210HR3 MRF7S19210HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19210H MRF7S19210HR3 MRF7S19210HSR3 MRF7S19210HR3 222212018471 A114 A115 AN1955 C101 JESD22 RF35

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3

    MRF8S9260HSR3

    Abstract: MRF8S9260HR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H
    Text: Document Number: MRF8S9260H Rev. 0, 12/2009 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HS JESD22-A114 AN1955 J251 C4532X5R1H475MT MRF8S9260H

    232272461009

    Abstract: PHYCOMP 2222 Phycomp chip capacitor datasheet A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 MRF7S21210HR3 232272461009 PHYCOMP 2222 Phycomp chip capacitor datasheet A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35

    22-15-2256

    Abstract: MRF8S9260HR3
    Text: Document Number: MRF8S9260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S9260HR3 MRF8S9260HSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier GSM base station applications with


    Original     		PDF MRF8S9260H MRF8S9260HR3 MRF8S9260HSR3 MRF8S9260HR3 22-15-2256

    12065C104KAT

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 0, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		PDF MRF7S21210H MRF7S21210HSR3 12065C104KAT A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35