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American Technical Ceramics Corp ATC100B100JT500X CERAMIC CAPACITOR, MULTILAYER, CERAMIC, 500V, BG, 90PPM/CEL TC, 0.00001UF, 1111
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Quest Components	ATC100B100JT500X		16			1 $5.64 10 $4.136 100 $4.136 1000 $4.136 10000 $4.136	Buy Now
Kyocera AVX Components 100B100JT500XTV Silicon RF Capacitors / Thin Film 500V 10pF Tol 5% Las Mkg Vertical
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TTI	100B100JT500XTV	Reel	2,000		500	1 - 10 - 100 - 1000 $3.55 10000 $3.55	Buy Now
Kyocera AVX Components 100B100JTN500XC100 Silicon RF Capacitors / Thin Film 10PF 500V 5% 1111
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TTI	100B100JTN500XC100	WAFL			100	1 - 10 - 100 $5.04 1000 $5.04 10000 $5.04	Buy Now
Kyocera AVX Components 100B100JTN300XC100 Silicon RF Capacitors / Thin Film 10PF 300V 5% 1111
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TTI	100B100JTN300XC100	WAFL			100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Kyocera AVX Components 100B100JT500XC100 Silicon RF Capacitors / Thin Film 10PF 500V 5% 1111
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TTI	100B100JT500XC100	WAFL			100	1 - 10 - 100 $3.35 1000 $3.35 10000 $3.35	Buy Now

ATC100B100JT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mrfe6vp5600hs Abstract: MRFE6VP5600H Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H	PDF
mosfet j172 Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to	Original	MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from	Original	AFT09MS031N AFT09MS031NR1 AFT09MS031GNR1 AFT09MS031NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1.1, 7/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 MRF8P9300HR6	PDF
J365 Abstract: TLC 3391 ATC100B150JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 1, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to	Original	MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 J365 TLC 3391 ATC100B150JT500X	PDF
81c1000 Abstract: ATC100B241JT200XT Text: Freescale Semiconductor Technical Data Document Number: MRF6VP41KH Rev. 3, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,	Original	MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 81c1000 ATC100B241JT200XT	PDF
NI-1230-4H Abstract: ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS Text: Freescale Semiconductor Technical Data Document Number: MRF8P8300H Rev. 1, 4/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P8300HR6 MRF8P8300HSR6 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8P8300H MRF8P8300HR6 MRF8P8300HSR6 NI-1230-4H ATC100B2R1BT500XT NI-1230-4S MRF8P8300HS	PDF
Untitled Abstract: No abstract text available Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology	Original	RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This	Original	MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 28cers,	PDF
ATC100B390JT500XT Abstract: ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8P9300H Rev. 1, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P9300HR6 MRF8P9300HSR6 Designed for CDMA and multicarrier GSM base station applications with	Original	MRF8P9300H MRF8P9300HR6 MRF8P9300HSR6 92ficers, MRF8P9300H ATC100B390JT500XT ATC100B200JT500XT ATC100B200 ATC100B4R7CT500X ATC100B100JT500X	PDF
AN1977 Abstract: AN1987 AN3263 J1213 MW6IC1940NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-1 Rev. 3.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base	Original	MW6IC1940N--1 MW6IC1940GNB MW6IC1940GNBR1 AN1977 AN1987 AN3263 J1213 MW6IC1940NBR1	PDF
CRCW12064701FKTA Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This	Original	MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 CRCW12064701FKTA a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22	PDF
Nippon capacitors Abstract: MRF6S19120H Text: Freescale Semiconductor Technical Data Document Number: MRF6S19120H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S19120HR3 MRF6S19120HSR3 Designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF6S19120H IS--95 MRF6S19120HR3 MRF6S19120HSR3 Nippon capacitors	PDF

ATC100B100JT500XT Abstract: MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 13, 6/2009 RF Power Field Effect Transistor MRF9060NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device	Original	MRF9060N MRF9060NR1 ATC100B100JT500XT MRF9060NR1 945 TRANSISTOR FREESCALE PACKING MARKING WB1 A113 ATC100B3R9CT500XT ATC100B470JT500XT JESD22 MRF9060NBR1	PDF
C3225X7R2A225KT Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0 Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices	Original	MRFE6VP8600H MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 C3225X7R2A225KT 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0	PDF
NIPPON CAPACITORS Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 MRF6S21190HR3 NIPPON CAPACITORS p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HSR3	PDF
2225x7r225kt3ab Abstract: MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHR6 MRF6VP41KHSR6 ATC100B9R1CT500XT Text: Freescale Semiconductor ‘Technical Data Document Number: MRF6VP41KH Rev. 0, 1/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial,	Original	MRF6VP41KH MRF6VP41KHR6 MRF6VP41KHSR6 2225x7r225kt3ab MRF6VP41KH A114 A115 C101 JESD22 MRF6VP41KHSR6 ATC100B9R1CT500XT	PDF
250GX-0300-55-22 Abstract: Arlon AN1955 MRF6VP121KHR6 MRF6VP121KHSR6 Text: Freescale Semiconductor Technical Data Document Number: MRF6VP121KH Rev. 3, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed	Original	MRF6VP121KH MRF6VP121KHR6 MRF6VP121KHSR6 250GX-0300-55-22 Arlon AN1955 MRF6VP121KHSR6	PDF
AN1907 Abstract: AN1977 AN1987 MW6IC1940NB MW6IC1940NBR1 1329A-03 AN3789 J1213 Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-2 Rev. 4.1, 12/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage	Original	MW6IC1940N--2 MW6IC1940NB MW6IC1940NBR1 AN1907 AN1977 AN1987 MW6IC1940NBR1 1329A-03 AN3789 J1213	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MMRF1006H Rev. 0, 12/2013 RF Power Field Effect Transistors MMRF1006HR5 MMRF1006HSR5 N-Channel Enhancement-Mode Lateral MOSFETs Designed for pulse and CW wideband applications with frequencies up to	Original	MMRF1006H MMRF1006HR5 MMRF1006HSR5 MMRF1006HR5	PDF
MRF9030N Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts	Original	MRF9030N MRF9030NBR1 MRF9030N	PDF
AFT09MS031NR1 Abstract: Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of	Original	AFT09MS031N O-270-2 AFT09MS031NR1 AFT09MS031NR1 AFT09MS031GNR1 Z11-Z16 GRM21BR72A103KA01B ATC100A220JT150XT transistor Z6 Coilcraft Design Tools	PDF
AN3263 Abstract: MW6IC1940NBR1 AN1977 AN1987 j642 J1213 MW6IC1940NB Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on- chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical	Original	MW6IC1940N MW6IC1940NB/GNB MW6IC1940NBR1 MW6IC1940GNBR1 MW6IC1940NBR1 AN3263 AN1977 AN1987 j642 J1213 MW6IC1940NB	PDF

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ATC100B100JT Search Results

ATC100B100JT Price and Stock

American Technical Ceramics Corp ATC100B100JT500X

Kyocera AVX Components 100B100JT500XTV

Kyocera AVX Components 100B100JTN500XC100

Kyocera AVX Components 100B100JTN300XC100

Kyocera AVX Components 100B100JT500XC100

ATC100B100JT Datasheets Context Search

mrfe6vp5600hs

mosfet j172

Untitled

Untitled

Untitled

J365

81c1000

NI-1230-4H

Untitled

Untitled

ATC100B390JT500XT

AN1977

CRCW12064701FKTA

Nippon capacitors

ATC100B100JT500XT

C3225X7R2A225KT

NIPPON CAPACITORS

2225x7r225kt3ab

250GX-0300-55-22

AN1907

Untitled

MRF9030N

AFT09MS031NR1

AN3263