Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
EAR99
RF3931
DS120306
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed
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RFG1M20090
RFG1M20090
DS130823
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amplifier 900mhz
Abstract: No abstract text available
Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS130501
amplifier 900mhz
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 1.8GHz to 2.2GHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology Single Circuit for 1.9GHz to 2.2GHz 48V Operation Typical Performance
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RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
RFG1M20090
DS130506
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SEMICONDUCTOR J598
Abstract: j598 ATC800B0R8BT500XT ATC800B J739
Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8S21172H
MRF8S21172HR3
MRF8S21172HSR3
MRF8S21172H
SEMICONDUCTOR J598
j598
ATC800B0R8BT500XT
ATC800B
J739
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simple power supply schematic diagram
Abstract: RF3931S2 ATC800A3R3BT
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS120406
simple power supply schematic diagram
RF3931S2
ATC800A3R3BT
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RF3931
Abstract: 46dBm
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
RF3931
DS110317
46dBm
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BW030
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 1.8 GHz TO 2.2GHz 90 W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power>90W Advanced Heat-Sink Technology
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RFG1M20090
RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
DS110620
BW030
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j598
Abstract: No abstract text available
Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8S21172H
MRF8S21172HR3
MRF8S21172HSR3
MRF8S21172HR3
j598
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies
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MRF8S21172H
MRF8S21172HR3
MRF8S21172HSR3
MRF8S21172HR3
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ATC800B680JT
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology
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RFG1M20090
RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
DS120418
ATC800B680JT
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
DS120406
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS120202
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ATC800B5R6
Abstract: ATC800B6R8 ATC800B120
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
RF3931
DS111026
ATC800B5R6
ATC800B6R8
ATC800B120
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Untitled
Abstract: No abstract text available
Text: RF3931 RF3931 30W GaN Wideband Power Amplifier The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier
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RF3931
RF3931
DS130905
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GaN ADS
Abstract: ATC800B ATC800B120 ATC800B6R8 RF3931 EAR99 ECE-V1HA101UP ERJ8GEYJ100V
Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN
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RF3931
900MHz
EAR99
RF3931
130mA
DS101115
GaN ADS
ATC800B
ATC800B120
ATC800B6R8
ECE-V1HA101UP
ERJ8GEYJ100V
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Untitled
Abstract: No abstract text available
Text: RFG1M20090 RFG1M20090 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER 1.8GHz TO 2.2GHz 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2 pin, RF400-2 Features Advanced GaN HEMT Technology Peak Modulated Power >90W Advanced Heat-Sink Technology Single Circuit for 1.9GHz to
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RFG1M20090
RF400-2
44dBm
-35dBc
-55dBc
DS120418
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Untitled
Abstract: No abstract text available
Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz
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RF3931
900MHz
RF3931
DS121207
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