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    ATF10236 Search Results

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    ATF10236 Price and Stock

    Hewlett Packard Co ATF-10236-TR1

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    Bristol Electronics ATF-10236-TR1 740 2
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    • 100 $1.5681
    • 1000 $1.3776
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    Quest Components ATF-10236-TR1 592
    • 1 $4.5
    • 10 $4.5
    • 100 $2.1
    • 1000 $1.95
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    Agilent Technologies Inc ATF-10236-TR1

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    Bristol Electronics ATF-10236-TR1 580
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    Quest Components ATF-10236-TR1 464
    • 1 $3.6
    • 10 $3.6
    • 100 $3.6
    • 1000 $1.98
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    Hewlett Packard Co ATF-10236

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, X BAND, GALLIUM ARSENIDE, N-CHANNEL, JUNCTION FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATF-10236 45
    • 1 $12
    • 10 $6
    • 100 $5.2
    • 1000 $5.2
    • 10000 $5.2
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    ATF10236 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATF10236 Agilent Technologies 0.5?12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10236 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10236 Avantek TRANSISTOR,JFET,N-CHANNEL,70MA I(DSS),MICRO-X Scan PDF
    ATF-10236-STR Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10236-STR Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10236-STR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ATF-10236-TR1 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF-10236-TR1 Agilent Technologies 0.5-12 GHz Low Noise Gallium Arsenide FET Original PDF
    ATF10236-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    ATF10236 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gaas fet micro-X Package

    Abstract: ATF-10236 36 Micro-X ATF-10236-STR ATF-10236-TR1 GA109 10236
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package Features Description • Low Noise Figure: 0.8 dB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    Original     		PDF ATF-10236 ATF-10236 5965-8697E gaas fet micro-X Package 36 Micro-X ATF-10236-STR ATF-10236-TR1 GA109 10236

    GHZ micro-X Package

    Abstract: micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100
    Text: Low Noise MESFETs Typical Specifications @ 25°C Case Temperature Gate Width (mm) Optimum Frequency Range (GHz) Test Frequency (GHz) Vdd NFo Ga P1 dB [1] (V) (dB) (dB) (dBm) ATF-13100 250 2 - 18 12 2.5 1.1 9.5 ATF-13336 250 2 - 16 12 2.5 1.4 ATF-13736 250


    Original     		PDF ATF-13100 ATF-13336 ATF-13736 ATF-13786 ATF-26836 ATF-26884 ATF-10236 ATF-10736 ATF-25170 ATF-25570 GHZ micro-X Package micro-x ATF-10136 atf 26836 ATF-25570 ATF-10236 ATF-25735 ATF-26884 ATF-13736 ATF-10100

    ATF-58143

    Abstract: GRH708 GRM40 LL2012-F ATF10236
    Text: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Agilent Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the


    Original     		PDF ATF-58143 5988-9119EN GRH708 GRM40 LL2012-F ATF10236

    gaas fet micro-X Package

    Abstract: No abstract text available
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 36 micro-X Package Features Description • Low Noise Figure: 0.8 dB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    Original     		PDF ATF-10236 ATF-10236 5965-8697E gaas fet micro-X Package

    7804 regulator

    Abstract: AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885
    Text: 4 GHz Television Receive Only LNB Design Application Note A007 NOTE: This publication is a reprint of a previously published Application Note and is for technical reference only. For more current information, see the following publications: • AN1091, 1 and 2 Stage 10.7 to 12.7 GHz Amplifiers Using the


    Original     		PDF AN1091, ATF-36163 5965-1235E. AN1136, 5966-2488E. AN1139, INA-51063 AN-A001: AN-S005: 5091-8825E 7804 regulator AFT-10136 S parameters for ATF 10136 AN-A002 low noise design ATF 10136 ATF10236 AFT-10236 7804 voltage regulator MSF8885

    ATF-58143

    Abstract: GRH708 ATF58143 LL2012-F
    Text: A Low Noise High Intercept Point Amplifier for 2 GHz Applications using the ATF-58143 PHEMT Application Note 1352 Introduction The Avago Technologies’ ATF-58143 is a low noise enhancement mode PHEMT designed for use in low cost -commercial applications in the UHF through


    Original     		PDF ATF-58143 ATF-10236 5988-9119EN GRH708 ATF58143 LL2012-F

    SOT143 L03

    Abstract: L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note AN 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors offer state-ofthe-art noise figure and gain performance with low power


    Original     		PDF 5964-3854E SOT143 L03 L0523 D2030 L03 sot143 yg 2025 microstripline FR4 AT-30511 AT-31011 W02 SOT23 ATF-10236

    atf-41435

    Abstract: 99250 schematic diagram receiver data circuit satellite ATF-10235 5091-8823E
    Text: Design of a 4 GHz LNA for a TVRO System Application Note A002 Introduction With the advent of low cost GaAs FETs, the consumer home entered a new phase in communications: the era of satellite television reception. A typical Television Receive Only TVRO system for this market is


    Original     		PDF 5091-8823E 5968-3244E atf-41435 99250 schematic diagram receiver data circuit satellite ATF-10235

    atf 36163 Low Noise Amplifier

    Abstract: ATF-10236 ATF36163 ATF-36163 LTC1044CS8 18 sot-363 rf power amplifier ATF10236
    Text: L and S Band Amplifiers using the ATF-36163 Low Noise PHEMT Application Note 1097 EESOF’s TouchstoneTM for The ATF-36163 PHEMT device has Windows and published S and Noise parameters. numerous applications as a low noise amplifier in the 900 MHz The reference plane for both the S


    Original     		PDF ATF-36163 SC-70 atf 36163 Low Noise Amplifier ATF-10236 ATF36163 LTC1044CS8 18 sot-363 rf power amplifier ATF10236

    yg 2025

    Abstract: HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF 5964-3854E yg 2025 HP346A 2305 isolator AT-30511 AT-31011 AT-32033 ATF-10236 AN-G004 equivalent transistor K 3532

    IAM-81008

    Abstract: 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 IAM-81008 5082-2830 HSMP-3895 5082-3043 ina-02170 INA-01170 30533 5082-0012 5082-2970 HSMP 2800

    ATF10236

    Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		PDF ATF-10236 frequen058 5963-3780E 5966-0166E ATF10236 FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686

    HP346A

    Abstract: D2030 5091-9311E 47433 W02 SOT23 AT-30511 AT-31011 AT-32033 ATF-10236 Hewlett-Packard transistor microwave
    Text: 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applications in the VHF through microwave frequency range. Today’s silicon bipolar transistors


    Original     		PDF

    ATF-13484

    Abstract: atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue
    Text: Application Information The following application information is either published in this catalog or available from your local Hewlett-Packard sales office, authorized distributor, or representative. Technical information is also available on the WWW at: www.hp.com/go/rf


    Original     		PDF ATF-10236 ATF-10136, ATF-13736, ATF-13484 ATF-21186 ATF-36163 ATF-36163 ATF-36077 ATF-13484 atf 36163 Low Noise Amplifier low noise design ATF 10136 A008 amplifier TRANSISTOR amplifier TRANSISTOR 12 GHZ ATF pHEMT ATF13484 A007 transistor atf Microwave GaAs FET catalogue

    5082-2830

    Abstract: IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870
    Text: Alphanumeric Index 1N5711 . 3-52 1N5712 . 3-52 1N5719 . 2-101 1N5767 . 2-101


    Original     		PDF 1N5711 1N5712 1N5719 1N5767 MSA-1023 MSA-1100 MSA-1104 MSA-1105 MSA-1110 VTO-9068 5082-2830 IAM-81008 HSMP-3895 hsms-2850 5082-0012 8205 datasheet hsms-285b HSMS-285C HSMS-2862 MSA-0870

    GHZ micro-X Package

    Abstract: ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736
    Text: Gallium Arsenide Field Effect Transistors Selection Guide NFo and Ga are specified at a low noise bias point, while P1 dB and G1 dB are specified at bias points which optimize these parameters. Low Noise PHEMTs Typical Specifications @ 25°C Case Temperature


    Original     		PDF ATF-36077 ATF-36163 OT-363 SC-70) ATF-44101 ATF-45101 ATF-45171 ATF-46101 ATF-46171 GHZ micro-X Package ATF-36163 Field Effect Transistors ATF-26884 atf 26836 ATF-10100 ATF-10136 ATF-13100 ATF-13336 ATF-13736

    GHZ micro-X Package

    Abstract: Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136
    Text: Transistor Selection Guide Silicon Bipolar Transistors NFo and Ga are specified at a low noise bias point, while P 1 dB, G1 dB, and |S 21E|2 are specified at bias points which optimize these parameters. Low Noise Transistors Typical Specifications @ 25°C Case Temperature


    Original     		PDF AT-30511 OT-143 OT-23 AT-30533 AT-31011 AT-31033 ATF-45101 ATF-45171 ATF-46101 GHZ micro-X Package Hewlett-Packard MICRO-X S parameters for ATF 10136 micro-x 200 mil BeO package AT-32032 ATF-13336 ATF-13786 at42010 ATF-10136

    gaas fet micro-X Package

    Abstract: P 55 NFO amplifier TRANSISTOR 12 GHZ GHZ micro-X Package MICRO-X ATF-10236 ATF-10236-STR ATF-10236-TR1
    Text: 0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 Features Description • Low Noise Figure: 0.8␣ dB Typical at 4␣ GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a cost effective microstrip package. Its


    Original     		PDF ATF-10236 ATF-10236 gaas fet micro-X Package P 55 NFO amplifier TRANSISTOR 12 GHZ GHZ micro-X Package MICRO-X ATF-10236-STR ATF-10236-TR1

    ATF-10736

    Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		PDF ATF-10236 ATF-10736 AN-G005 ATF10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05

    JEW 5-58

    Abstract: No abstract text available
    Text: A T F -10236 w arn H E W L E T T 1 "H M P A C K A R D 0.5-12 GHz Low Noise Gallium Arsenide FET Features • • • • 36 micro-X Package1 Low Noise Figure: 0.8 dB typical at 4 GHz Bias: Vos = 2V, I ds = 20 mA High Associated Gain: 13.0 dB typical at 4 GHz


    OCR Scan     		PDF ATF-10236 6962-8096E JEW 5-58

    W1A sot23 transistor

    Abstract: ci LA 7804 ON w1a SOT-23 wl 1281 W02 SOT23 w1a, sot-23 ST 11791 EN 13557 yg 2025 W1A SOT23
    Text: HEW LETT 1 "KM P A C K A R D 900 and 2400 MHz Amplifiers Using the AT-3 Series Low Noise Silicon Bipolar Transistors Application Note 1085 1. Introduction Discrete transistors offer low cost solutions for commercial applica­ tions in the VHF through microwave frequency range.


    OCR Scan     		PDF

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    gaas fet micro-X Package

    Abstract: re 08
    Text: What HEWLETT* mLliM PACKARD 0.5-12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10236 F e atu res D escription • L o w N o ise F ig u re : 0.8 IB Typical at 4 GHz The ATF-10236 is a high performance gallium arsenide Schottky-barriergate field effect transistor housed in a


    OCR Scan     		PDF ATF-10236 ATF-10236 gaas fet micro-X Package re 08

    avantek

    Abstract: Avantek amplifier ATF-10236 ATF-10236-STR ATF-10236-TR1 3320E Avantek, Inc
    Text: AVANTEK EOE D INC Q a v a n tek • imnhb GG0b537 1 ■ ATF-10236 0.5-12 GHz Low Noise FE Gallium Arsenide FET 'T - z i - z £ Avantek 36 mlcro-X Package1 Features • • • • • • Low Noise Figure: 0.8 dB typical at 4 GHz Low Bias: V d s = 2V, I d s = 20 mA


    OCR Scan     		PDF QGGbS37 ATF-10236 ATF-10236 avantek Avantek amplifier ATF-10236-STR ATF-10236-TR1 3320E Avantek, Inc