TT220
Abstract: transistor t220 BUZ71 dc to ac TT 220
Text: {ZT SGS-THOMSON BUZ71 ^ 7 # ,. M g[M>g[L[I(g¥[Mg [M(gi_ BUZ71FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^DS(on) ^d " BUZ71 BUZ71FI 50 V 50 V 0.1 Q 0.1 0 14 A 12 A • VERY FAST SW ITCHING • LOW DRIVE ENE R G Y FOR EASY DRIVE,
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BUZ71
BUZ71FI
BUZ71
500ms
TT220
transistor t220
BUZ71 dc to ac
TT 220
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3Na60
Abstract: No abstract text available
Text: *57 SGS-THOMSON 3NA60 S T P 3 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3N A60FI V dss R DS(on) Id 600 V 600 V < 4 a <4 a 2.9 A 2.1 A . T Y P IC A L R Ds (on) = 3.3 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING
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3NA60
STP3NA60
A60FI
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7NA60
Abstract: No abstract text available
Text: *57 SGS-THOMSON 7NA60 S T P 7 N A6 0 F I stp iL iO M iQ £ I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7N A 60 STP7NA60FI • • . ■ ■ . ■ V dss R DS(on) Id 600 V 600 V < 1 a < 1 a 7.2 A 4 .4 A T Y P IC A L RDS(on) = 0.92 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING
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STP7NA60FI
7NA60
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DD 127 D TRANSISTOR
Abstract: JIS B 0409
Text: *57 TYPE STP30N06 STP30N06FI • • . ■ ■ . ■ ■ SGS-THOMSON s t p 3 on o6 ilLiCTIIMDe STP30N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS on Id 60 V 60 V < 0 .0 5 a < 0 .0 5 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y
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STP30N
STP30N06
STP30N06FI
DD 127 D TRANSISTOR
JIS B 0409
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tt2201
Abstract: No abstract text available
Text: *57 SGS-THOMSON stpsnaso iL iO M iQ £ I S T P 8 N A5 0 F I N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP8NA50 STP8N A50FI V dss R DS(on) Id 500 V 500 V < 0.85 a < 0.85 a 8 A 4.5 A . T Y P IC A L R Ds (on) = 0.7 Q m ± 30V G A TE TO S O U R C E V O LTA G E R ATING
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STP8NA50
A50FI
tt2201
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON VB921Z VB921ZFI Rl M[EL[iOT KS HIGH VOLTAGE IGNITION COIL DRIVER PO W ER IC ADVANCE DATA . . • . NO EXTERNAL COMPONENT REQUIRED INTEGRATED HIGH VOLTAGE CLAMP COIL CURRENT LIMIT INTERNALLY SET HIGH RUGGEDNESS DESCRIPTION The VB921Z and VB921ZFI are monolithic high
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VB921Z
VB921ZFI
VB921Z
VB921ZFI
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RF540
Abstract: IRF540 IRF540FI b17a q02c IRF540 application IRF541 IRF541FI IRF542 IRF542FI
Text: r z 7 SCS-TH O M SO N ^7# R{flO IS i[L[i®irMD©i S G S -T H 0M S 0N TYPE IRF540 IRF540FI IRF541 IRF541FI IRF542 IRF542FI IRF543 IRF543FI V dss 100 V 100 V 80 V 80 V 100 V 100 V 80 V 80 V ^DS on 0.077 fi 0.077 fi 0.077 fi 0.077 fi 0.100 fi 0.100 fi 0.100 Q
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540/FI-541/FI
542/FI-543/FI
IRF540
IRF540FI
IRF541
IRF541FI
IRF542
IRF542FI
IRF543
IRF543FI
RF540
b17a
q02c
IRF540 application
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BUZ11
Abstract: BUZ11FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche
Text: = 7 SGS-THOMSON kT # BUZ11 B U Z 1 1 FI RjlOICœiilLKB'f IBOMDei N - C HANNEL EN H A N C EM EN T MODE PO W ER MOS TR A N SISTO R S TYPE BU Z11 BU Z11FI • . . . . . . V dss R DS on Id 50 V 50 V < 0 .0 4 Q. < 0 .0 4 Q. 36 A 21 A TY P IC A L R D S (on) = 0.03
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BUZ11
BUZ11FI
O-220
ISOWATT220
BUZ11FI
BUZ11/FI
buz11 1d
BUZ11F
2M236
C3621
BUZ11 avalanche
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T410
Abstract: Triac T435 triac 800V 1A WT-410
Text: f= 7 ^ •T # S G S -T H O M S O N T 4 io M E E S m iig T O iM tg S _ T 4 3 5 HIGH PERFORMANCE TRIACS FEATURES 4A • V drm = 400 V to 800 V . SENSITIVE GATE : lGT< 1 0 m A . HIGH COMMUTATION : dl/dt c>3.5 A/ms ■ ITRM S = DESCRIPTION The T410 / T435 high voltage TRIAC Families
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T0220AB,
OT194
ISOWATT220AB
194/SO
ATT220AB
T410
Triac T435
triac 800V 1A
WT-410
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON s tp 2 5 n o6 ilLiCTIIMDe STP25N 06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP25N 06 S TP25N 06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0.065 a < 0.065 a 25 A 16 A T Y P IC A L RDS(on) = 0.048 Q A V A LA N C H E R U G G ED T E C H N O LO G Y
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STP25N
TP25N
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Triac T405
Abstract: M/T405
Text: / = 7 SGS-THOMSON ^ 7# Ik LHÈTTMIiDgi T405 HIGH PERFORMANCE TRIACS FEATURES 4A • V drm = 400 V to 600 V . SENSITIVE GATE: IGt < 5 mA ■ LOW Ih < 10 mA ■ ITRM S = DESCRIPTION The T405 high voltage TRIAC Families are high performance planar diffused PNPN devices
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T0220AB,
OT194
ISOWATT220AB
194/SO
ATT220AB
Triac T405
M/T405
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IRF74Q
Abstract: IRF 740 N transistor irf 740 IRF740FI IRF743 IRF 740 IRFJ40 IRF741 ci 741 IRF740
Text: 3GE P • 7^2^237 G02cîô01 T ■ [Z T S G S -T H O M S O N 4 7#b S G S-THOMSON TYPE IRF740 IRF740FI IRF741 IRF741FI IRF742 IRF742FI IRF743 IRF743FI Vqss 400 V 400 V 350 V 350 V 400 V 400 V 350 V 350 V 'T - 'S eî - \ 3 IRF 740/FI-741/FI IRF 742/FI-743/FI
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740/FI-741/FI
742/FI-743/FI
IRF740
IRF740FI
IRF741
IRF741FI
IRF742
IRF742FI
IRF743
IRF743FI
IRF74Q
IRF 740 N
transistor irf 740
IRF 740
IRFJ40
ci 741
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TT220
Abstract: TP15N05L
Text: SGS-THOMSON ^ 7/L MTP15N05L/FI MTP15N06L/FI RfflD [s3©[ilLl gTI[SΩlÎ!!lDÊi N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S(on MTP15N05L MTP15N05LFI 50 V 50 V 0.15 fi 0.15 Q 15 A 10 A MTP15N06L MTP15N06LFI
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MTP15N05L/FI
MTP15N06L/FI
MTP15N05L
MTP15N05LFI
MTP15N06L
MTP15N06LFI
TT220
500ms
TT220
TP15N05L
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RE540
Abstract: stp7n
Text: SGS-THOMSON * 5 7NA40 STP7N A40FI stp iLiO M iQ £I 7 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA40 STP7N A40FI • • . ■ ■ . ■ V dss R DS(on) Id 400 V 400 V < 1a < 1a 6.5 A 4.1 A T Y P IC A L RDS(on) = 0.82 Q ± 30V G A TE TO S O U R C E V O LTA G E R ATING
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7NA40
A40FI
STP7NA40
RE540
stp7n
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MTP3N6
Abstract: No abstract text available
Text: r r z S G S -T H O M S O N *7# » » E tL ie T O K f ! MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE V DSS ^D S on M TP3N60 M TP3N60FI 600 V 600 V 2.5 ß 2.5 Q 3 A 2.5 A • HIGH VO LTAG E FOR OFF-LINE APPLICATIO NS
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MTP3N60
MTP3N60FI
TP3N60
TP3N60FI
100KHz
ATT22Q
500ms
MTP3N6
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TT220
Abstract: transistor IRF 531 IRF 530 transistor 531
Text: rZ 7 SGS-THOMSON A T Æ . IRF 530/FI-531/FI IRF 532/FI-533/FI IH D Ê IM ÎIlL U tô M K O D È S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA • • • • TYPE V DSS R DS on IRF530 IRF530FI 100 V 100 V 0.16 0.16 IRF531 IRF531FI
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530/FI-531/FI
532/FI-533/FI
IRF530
IRF530FI
IRF531
IRF531FI
IRF532
IRF532FI
IRF533
IRF533FI
TT220
transistor IRF 531
IRF 530
transistor 531
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON iL iO M K I stp36Nosl STP36N05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y
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36Nosl
STP36N05LFI
STP36N05L
STP36N
05LFI
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rf620
Abstract: No abstract text available
Text: *57 IR F 620 IR F 6 2 0 F I S G S -T H O M S O N iL iO M K I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IR F 620 IR F 620 F I 1 . 1 . V dss RDS on Id 200 V 200 V < 0 .8 £2 < 0.8 a 6 A 4 A T Y P IC A L R Ds(on) = 0.55 A V A LA N C H E R U G G ED T E C H N O LO G Y
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36N06
Abstract: No abstract text available
Text: *57 SGS-THOMSON iL iO M K I stp36N06L STP36N06LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N05L STP36N 05LFI • • . ■ ■ . ■ ■ . V dss R DS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A T Y P IC A L RDS(on) = 0.033 Q A V A LA N C H E R U G G ED T E C H N O LO G Y
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36N06L
STP36N06LFI
STP36N05L
STP36N
05LFI
36N06
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OT 306
Abstract: No abstract text available
Text: *57 SGS-THOMSON s t p 3 6 n o6 STP36N 06FI ilLiCTIIMDe N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP36N06 STP36N06FI • • . ■ ■ . ■ ■ V dss R DS on Id 60 V 60 V < 0 .0 4 a < 0 .0 4 a 36 A 21 A T Y P IC A L RDS(on) = 0.03 Q A V A LA N C H E R U G G ED T E C H N O LO G Y
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STP36N
STP36N06
STP36N06FI
OT 306
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON s tp 3 0 n 0 5 ilLiCTIIMDe STP30N 05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N 05 S TP30N 05FI • • . ■ ■ . ■ ■ V dss R DS on Id 50 V 50 V < 0.05 a < 0.05 a 30 A 19 A T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y
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STP30N
TP30N
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p15n05
Abstract: C5443 5N05L 5N05 15N05L 15n05 CS4420 P15N05L
Text: *57 SGS-THOMSON stp 15no5l ilLiCTIIMDe S T P 1 5 N 05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 15N05L S T P 15N05LFI • . . ■ ■ . ■ ■ V dss R DS on 50 V 50 V < 0.15 a < 0.15 a Id 15 10 A A T Y P IC A L RDS(on) = 0.115 £2
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15no5l
05LFI
15N05L
15N05LFI
p15n05
C5443
5N05L
5N05
15n05
CS4420
P15N05L
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