IAE080X
Abstract: IAE200X InGaas PIN photodiode, 1550 sensitivity application rangefinding InGaAs APD photodiode 1550 inGaAs photodiode 1550 avalanche photodiode free space InGaas APD photodiode, 1550 sensitivity apd 1550 OTDR InGaas PIN photodiode, 1550 sensitivity
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eyesafe rangefinding applications, free space optical
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Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally suited to eyesafe rangefinding applications, free space optical
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Abstract: No abstract text available
Text: 80 & 200 m InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339757-VAR Description CMC Electronics’ 264-339757-VAR are using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The
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264-339757-VAR
264-339757-VAR
12-lead
1000-1600nm
200um
Opto757-VAR
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Abstract: No abstract text available
Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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IAG 080
Abstract: photodiode ingaas ghz
Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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Text: Detectors Only available on request! InGaAs Avalanche Photodiode IAE-Series Description The IAE-series avalanche photodiode is a large area InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at 1550 nm is ideally
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Text: Detectors InGaAs Avalanche Photodiode IAG-Series Description The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at 1550 nm is ideally suited
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inGaAs photodiode 1550
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE 200 avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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IAE080X
Abstract: InGaas PIN photodiode, 1550 sensitivity IAE200X iae200 rangefinding InGaas APD photodiode, 1550 sensitivity InGaas PIN photodiode, 1550 ,sensitivity InGaAs photodiode spectral response TO46 photodiode free space communication
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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IAG 080
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode IAE-Series DESCRIPTION The IAE-series avalanche photodiode is the largest commercial available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1650 nm wavelength range. The peak responsivity at
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InGaas PIN photodiode, 1550 NEP
Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at
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photodiode InGaAs NEP
Abstract: No abstract text available
Text: Receiver TIA with TEC MICROELECTRONICS 200 MHz , 200 m InGaAs APD Avalanche Photodiode 264-339769-101 Description CMC Electronics’ 264-339769-101 is using a low noise InGaAs APD with an ionization ratio of 0.2 with a GaAs FET input transimpedance amplifier
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12-lead
200um]
Opto769-101
photodiode InGaAs NEP
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Abstract: No abstract text available
Text: Silicon APD Avalanche Photodiode Preamplifier Module MICROELECTRONICS 264-339794-VAR Description CMC Electronics’ 264-339794 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal feedback
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264-339794-VAR
12-lead
500-1050nm
500um,
200um,
Opto794-VAR
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Abstract: No abstract text available
Text: Pigtailed InGaAs Avalanche Photodiode Preamplifier Module MICROELECTRONICS 276-339761-000 Description CMC Electronics’ 264-339761-000 uses an InGaAs APD with a GaAs FET frontend transimpedance amplifier in a DIL-14 package. The InGaAs APD has a low ionization ratio for lower shot noise. The
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DIL-14
1000-1600nm
Opto761-VAR
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PerkinElmer tr 1700
Abstract: PerkinElmer Avalanche Photodiode
Text: Features and Benefits PerkinElmer’s new family of APD modules features built in amplifier and thermoelectric cooler. They are ideal for demanding LIDAR and range-finding applications. Ultra low noise equivalent power NEP Introduction The new LLAM series of avalanche
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12-lead
DTS0108P
PerkinElmer tr 1700
PerkinElmer Avalanche Photodiode
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SILICON APD Pre-Amplifier
Abstract: No abstract text available
Text: Silicon APD Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339795-VAR Description CMC Electronics’ 264-339795 Series are using a silicon reach through APD with a GaAs FET input transimpedance amplifier in a 12-lead TO-8 package. The amplifier internal
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264-339795-VAR
12-lead
550-1050nm
Opto795-VAR
SILICON APD Pre-Amplifier
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photodiode 1550nm nep
Abstract: No abstract text available
Text: InGaAs Avalanche Photodiode on TEC, Preamplifier Modules MICROELECTRONICS 264-339759-VAR Description CMC Electronics’ 264-339759 Series are using either a InGaAs APD with an ionization ratio of 0.2 or a Silion APD with an ionization ratio of 0.02. The APD is coupled to a Gasfet input
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264-339759-VAR
12lead
200um]
200um,
Opto759-VAR
photodiode 1550nm nep
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JDSU ERM
Abstract: avalanche photodiode free space JDSU avalanche photodiode ingaas ghz avalanche photodiode jdsu 10 gb APD receiver avalanche photodiode ingaas ghz 070AW avalanche photodiode receiver apd 1550, sensitivity 30 dBm InGaAs APD photodiode 1550
Text: COMMUNICATIONS COMPONENTS 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx Key Features • Sensitivity of -27.3 dBm • TIA gain of 5.5 kΩ (differential) • Very small form factor MSA coplanar package • Low cost • Available with FC, LC or SC connectors
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ERM578LMX
498-JDSU
5378-JDSU
JDSU ERM
avalanche photodiode free space
JDSU avalanche photodiode ingaas ghz
avalanche photodiode jdsu
10 gb APD receiver
avalanche photodiode ingaas ghz
070AW
avalanche photodiode receiver
apd 1550, sensitivity 30 dBm
InGaAs APD photodiode 1550
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receiver avalanche 1550 fiber 2.5
Abstract: No abstract text available
Text: Product Bulletin 10 Gb/s Avalanche Photodiode APD Micro Receiver ERM 578 LMx The JDS Uniphase APD Micro Receiver (ERM 578 LMx) is a 10 Gb/s avalanche photodiode receiver in a small form factor package with differential outputs. Consisting of a 10 Gb/s avalanche photodiode and a high gain SiGe
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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Si apd photodiode
Abstract: APD bias gain military Proximity Sensor APD, applications, bias supply Photodiode apd high sensitivity Photodiode apd amplifier LIDAR Photodiode Si apd high sensitivity Photodiode apd LIDAR detector
Text: SD012-44-62-221 Si Avalanche Photodiode TIA Hybrid The SD012-44-62-221 device features a high-speed silicon avalanche photodiode APD hybridized with a high gain transimpedance amplifier (TIA) in a sturdy TO-5 package. The device exhibits extremely high sensitivity thanks to excellent quantum
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SD012-44-62-221
SD012-44-62-221
Si apd photodiode
APD bias gain
military Proximity Sensor
APD, applications, bias supply
Photodiode apd high sensitivity
Photodiode apd amplifier
LIDAR
Photodiode Si apd high sensitivity
Photodiode apd
LIDAR detector
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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