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    B 1370 Search Results

    B 1370 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    F1370NBGI8 Renesas Electronics Corporation High-band DPD Demodulator with Integrated DSA and RF Switch Visit Renesas Electronics Corporation
    R7F701370AEEBG Renesas Electronics Corporation High-end Automotive Microcomputers for Chassis Control Visit Renesas Electronics Corporation
    F1370NBGI Renesas Electronics Corporation High-band DPD Demodulator with Integrated DSA and RF Switch Visit Renesas Electronics Corporation
    F1370EVBI Renesas Electronics Corporation Evaluation Board for F1370 DPD Demodulator Visit Renesas Electronics Corporation
    10137004-12JLF Amphenol Communications Solutions ExaMAX® 56Gb/s High Speed Backplane Connector 92Ohm, 4-Pair, 10 column, 140 position, Right Angle Receptacle, Left Guide Pin. Visit Amphenol Communications Solutions
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    B 1370 Price and Stock

    Panasonic Electronic Components ERA-3AEB1370V

    RES SMD 137 OHM 0.1% 1/10W 0603
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    DigiKey ERA-3AEB1370V Cut Tape 28,426 1
    • 1 $0.14
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    • 100 $0.0708
    • 1000 $0.04865
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    ERA-3AEB1370V Digi-Reel 28,426 1
    • 1 $0.14
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    • 100 $0.0708
    • 1000 $0.04865
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    ERA-3AEB1370V Reel 25,000 5,000
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    TTI ERA-3AEB1370V Reel 5,000
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    Master Electronics ERA-3AEB1370V
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    Panasonic Electronic Components ERA-2AEB1370X

    RES SMD 137 OHM 0.1% 1/16W 0402
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    DigiKey ERA-2AEB1370X Cut Tape 19,003 1
    • 1 $0.18
    • 10 $0.129
    • 100 $0.0911
    • 1000 $0.06218
    • 10000 $0.04624
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    ERA-2AEB1370X Digi-Reel 19,003 1
    • 1 $0.18
    • 10 $0.129
    • 100 $0.0911
    • 1000 $0.06218
    • 10000 $0.04624
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    ERA-2AEB1370X Reel 10,000 10,000
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    Newark ERA-2AEB1370X Reel 10,000
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    TTI ERA-2AEB1370X Reel 20,000 10,000
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    Master Electronics ERA-2AEB1370X
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    New Advantage Corporation ERA-2AEB1370X 20,000 1
    • 1 -
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    Panasonic Electronic Components ERA-8AEB1370V

    RES SMD 137 OHM 0.1% 1/4W 1206
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    DigiKey ERA-8AEB1370V Digi-Reel 8,558 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
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    ERA-8AEB1370V Cut Tape 8,558 1
    • 1 $0.39
    • 10 $0.278
    • 100 $0.1934
    • 1000 $0.12911
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    ERA-8AEB1370V Reel 5,000 5,000
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    Newark ERA-8AEB1370V Cut Tape 5,000
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    ERA-8AEB1370V Reel 5,000
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    Master Electronics ERA-8AEB1370V
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    Essentra Components FB1370A

    SHOULDER WASHER, NATURAL,.315 IN
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    DigiKey FB1370A Bag 2,174 1
    • 1 $0.27
    • 10 $0.27
    • 100 $0.1567
    • 1000 $0.13322
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    RS FB1370A Bulk 6 Weeks 5,000
    • 1 -
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    • 10000 $0.12
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    Panasonic Electronic Components ERA-6AEB1370V

    RES SMD 137 OHM 0.1% 1/8W 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ERA-6AEB1370V Digi-Reel 938 1
    • 1 $0.14
    • 10 $0.101
    • 100 $0.0713
    • 1000 $0.04896
    • 10000 $0.04896
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    ERA-6AEB1370V Cut Tape 938 1
    • 1 $0.14
    • 10 $0.101
    • 100 $0.0713
    • 1000 $0.04896
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    TTI ERA-6AEB1370V Reel 5,000
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    • 10000 $0.0338
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    Master Electronics ERA-6AEB1370V
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    B 1370 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    qm431

    Abstract: E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455
    Text: BBJ Zulassungen/approvals QK/T. Saringer, Datum: Type Cat. No. Approval No Volts AMPS Wire mm2 EK 10 035466 B/12/1145/96 10 EK 10/35 066136 B/12/1145/96 10 EK 16 037466 B/12/1145/96 16 EK 16/35 019016 B/12/1145/96 16 EK 2.5/35 066106 B/12/1145/96 2,5 EK 2.5N


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    PDF B/12/1145/96 qm431 E60693 terminals crimped DIN 46249 KEMA keur t 85 e 156176 KLIPPON 16K3 131706 diode catalogue 160455

    d687

    Abstract: h337 a7338 C2227 transistor D227 EPCOS 1400 09 O B568 L2227M B41303-A7338-M equivalent j8338
    Text: Snap-In Capacitors B 41 303 85 °C B 43 303 B 41 303, B 43 303 GP grade For universal application Construction • Charge-discharge proof, polar ■ Aluminum case, fully insulated ■ Snap-in solder pins to hold component in place on PC-board ■ Minus pole marking on case surface


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    PDF

    2N7002DICT-ND

    Abstract: 16SP270M schematic main board J102 fet 4SP820M T TPS5210 TPS5210EVM-116 ECSH1CD226R capacitor 4700 uF 50V X7R murata
    Text: TPS5210EVM-116 Assembly File Effective Date: 02/12/99 B Current EVM Rev: B TEXAS INSTRUMENTS TPS5210EVM-116 Assembly File Table of Contents Introduction. 3


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    PDF TPS5210EVM-116 TPS5210EVM-116 SLVP116DB SLVP116DB2 TPS5210 2N7002DICT-ND 16SP270M schematic main board J102 fet 4SP820M T TPS5210 ECSH1CD226R capacitor 4700 uF 50V X7R murata

    HX8340B

    Abstract: HX8340-B mx 362-0
    Text: DATA SHEET DOC No. HX8340-B(N -DS ) HX8340-B(N) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 October, 2007 HX8340-B(N) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver


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    PDF HX8340-B 176RGB 224October, 225October, HX8340B mx 362-0

    HX8340-B

    Abstract: diode s524 HX8340 HX8340B crl 858 TVS DIODE KVP 99
    Text: DATA SHEET DOC No. HX8340-B(T -DS ) HX8340-B(T) 176RGB x 220 dot, 262k color, with internal GRAM, TFT Mobile Single Chip Driver Preliminary version 01 February, 2008 HX8340-B(T) 176RGB x 220 dot, 262K color, with internal GRAM, TFT Mobile Single Chip Driver


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    PDF HX8340-B 176RGB dummy19 diode s524 HX8340 HX8340B crl 858 TVS DIODE KVP 99

    HYMP525P72BP4

    Abstract: HYMP512R72BP4-E3 HY5PS12821BFP HYMP525R72BP4-E3 HY5PS12821B
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM


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    PDF 240pin 512Mb HYMP564R72BP8-E3/C4 512MB 64Mx72 64Mx8 HY5PS12821BFP) HYMP564P72BP8-E3/C4/Y5/S5 HYMP525P72BP4 HYMP512R72BP4-E3 HY5PS12821BFP HYMP525R72BP4-E3 HY5PS12821B

    elcon SERIES 1000

    Abstract: No abstract text available
    Text: Intrinsic Safety Isolation Barriers SIB 1000 Series 380 $ Basic Unit C A B A B ߜ Input Output Isolation ߜ For J, K, T, E, R, S, B Thermocouples, mV, and Pt100 and Ni100 RTDs ߜ Converts Signal from Hazardous Location into 4 to 20 mA Signal ߜ Field Programmable


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    PDF Pt100 Ni100 SIB-BP-1116-TB-R KTSS-316G-12 TQSS-316G-12 12AWG elcon SERIES 1000

    DDR2-400

    Abstract: DDR2-533 DDR2-667 HY5PS12821BFP
    Text: 240pin DDR2 VLP Registerd DIMMs based on 512 Mb B ver. This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver.


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    PDF 240pin 512Mb HYMP564P72BP8L-E3/C4/Y5 512MB 64Mx72 64Mx8 HY5PS12821BFP) HYMP512P72BP4L-E3/C4/Y5 DDR2-400 DDR2-533 DDR2-667 HY5PS12821BFP

    HYMP525R72BP4-E3

    Abstract: HY5PS12821B HY5PS12821BFP HYMP512R72BP4-E3 HYMP564R72 HY5PS12421B HY5PS12421BFP HYMP
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM


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    PDF 240pin 512Mb HYMP564R72BP8-E3/C4 512MB 64Mx72 64Mx8 HY5PS12821BFP) HYMP564P72BP8-E3/C4/Y5/S5 HYMP525R72BP4-E3 HY5PS12821B HY5PS12821BFP HYMP512R72BP4-E3 HYMP564R72 HY5PS12421B HY5PS12421BFP HYMP

    HY5PS12821

    Abstract: HYMP125P72BMP4L-C4 HYMP512P72BP4L-C4 DDR2-533 DDR2-667 HY5PS12821BFP HYMP125P72BMP4L
    Text: 240pin DDR2 VLP Registerd DIMMs based on 512 Mb B ver. This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver.


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    PDF 240pin 512Mb HYMP564P72BP8L-C4/Y5 512MB 64Mx72 64Mx8 HY5PS12821BFP) HYMP512P72BP4L-C4/Y5 HY5PS12821 HYMP125P72BMP4L-C4 HYMP512P72BP4L-C4 DDR2-533 DDR2-667 HY5PS12821BFP HYMP125P72BMP4L

    Untitled

    Abstract: No abstract text available
    Text: F IG NO 170 J70T L J70FL 1370 J74 I7 4 T L J74FL J374 J79 J79T L J79FL J379 -7 3 .7 4 -75 -7 5 F L -3 7 5 1 A / B /6 A 1A/B 1A/B 1A/B 2A/B 2A/B. ZA/B 2A/B 3A/B 3 A /B 3A/B 3A/B 4A 4A/5A/B 4B/5A/A 4 Ö /5A 5B/6B CJ30 Gl —1 -2 5 — 49 -7 3 -9 7 -121 -1 4 5


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    PDF J70FL J74FL J79FL CJ330

    1N3307

    Abstract: 1N3327 1N3327BR IR 94 1N3328 1N3326 1N3311 1N3315 1N3320 1n3321
    Text: zener diodes diodes zener Types VZT/'ZT min 50 W / 1N 3305 B 1N 3306 B 1N 3307 B 1N 3308 B 1N 3309 B 1N 3310 B 1N3311 B 1N 3312 B 1N 3314 B 1N3315 B 1N 3317 B 1N 3319 B 1N 3320 B 1N 3321 B 1N 3323 B 1N 3324 B 1N 3325 B 1N 3326 B 1N 3327 B 1N 3328 B 1N 3330 B


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    PDF 1N3311 1N3307 1N3327 1N3327BR IR 94 1N3328 1N3326 1N3315 1N3320 1n3321

    B1370

    Abstract: 2SB1370 2S81370 tr, 2sb1370
    Text: 2 S B 1 3 7 0 Transistors X>Rea» flB09:X28 <5 66 Power Transistor ( —60V, —3A 2 S B 1370 • A b s o lu t e m ax im u m ra tin g s (T b = “ 25‘C ) 1) 2) 3) 4' L o w V c tw o . (T yp —0 .3 V at lc A s = _ 2 /—0-2A ) Excellent O C cu rre n t gain characteristics


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    PDF 2SB1370 flB09 --60V, ------60V 94L-411-6303) B1370 2SB1370 2S81370 tr, 2sb1370

    0PA128

    Abstract: OPA128SM-BI
    Text: BURR-BROUN CORP H E b u r r -b r o w n I b b D | 1 7 31 3b5 001370E Û | OPA128 I MILITARY & DIE V E R S IO N S A V A IL A B L E Electrometer-Grade OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • ULTRA-LOW BIAS CURRENT: 75fA max • ELECTROM ETER • LOW OFFSET: 50QuV max


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    PDF 001370E OPA128 50QuV 0PEN-L00P A0515 AD549 OPA128 10l5fi) 0PA128 OPA128SM-BI

    Untitled

    Abstract: No abstract text available
    Text: BENCHÏ1ARÛ niCROELEC bûE D 137001=] 0001547 150 « B E N bq4015/bq4015Y BENCHMARQ 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4015 is a nonvolatile 4,194,304-bit static RAM organized as 524,288 words by 8 bits. The


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    PDF bq4015/bq4015Y 512Kx8 bq4015 304-bit 32-pin bq4015MB 10-year bq4015MA bq4015MApart

    ZNR14K201U

    Abstract: znr14k201 ZNR14K star delta auto trans wiring diagram ERZ-C14DK201V thyristor 6-pulse full wave firing circuit znr14 ERZC14DK201 TB118 AC drives regenerative braking circuits diagram
    Text: ALLEN-BRADLEY Instruction Manual Bulletin 1370 DC Drive Module Series B Price: S25.00 Because of the variety o f uses for this equipm ent ana because o f the differen ces b etw een this solid state equipm ent and electrom echanical equipm ent, th e user of


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: böE D BENCHHARÛ MICFOELEC 137001^ 0001215 ^Tû « B E N bq2005 BENCHMARQ Dual-Battery Fast Charge IC Features General Description >- Fast charge control and conditioning for one or two NiMH or NiCd batteries The CMOS bq2005 Dual-Battery Fast Charge IC provides comprehen­


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    PDF bq2005 bq2005 20-pin

    BB113

    Abstract: BB-II38 BB-1138 M1136 BB-II38-032 103 z cm 64
    Text: 13 12 MATERIAL NO. LOOSE PIECE 190160085 190160099 190160006 190160040 190160082 190160098 190160005 190160039 190160081 ENGINEERING NO. P - II4 2 M - II3 6 - 0 3 2 A A -II3 T -0 3 2 B B - 1138-032 P - I I3 9 - 0 3 2 M -II3 6 A A -II3 7 B B -II3 8 P-1139 11


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    PDF P-II42 P-1142T M-II36-032 M-1136-032T AA-II37-032 AA-1137-032T BB-II38-032 BB-1138-032T P-1139-032 P-1139-032T BB113 BB-II38 BB-1138 M1136 103 z cm 64

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MC10EP33/D SEM ICONDUCTO R TECHNICAL DATA Product Preview ~ M C 10EP33 4 D ivider The MC10EP33 is an integrated + 4 divider. The differential clock inputs and the V b b allow a differential, single-ended or AC coupled interface to the device. If used, the V b b output should be bypassed to


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    PDF MC10EP33/D 10EP33 MC10EP33 440ps

    ITT 7400

    Abstract: EI 33 GVA-60 DSAGER00065 itt 129 i8428 ei 306 20 64
    Text: ^ r a - •"i 1 1 t 1 1 1 i 1 1 1 1 1 <5 L- t» c a) B ild 5.4. K e rn e ; a - Schenkelkern, b - M antelkern Bild 5.5. V erschiedene gebräuchliche K em b lech sch n itte fü r Ü b e rtra g e r; a - M -S ch n itt, b - E i-S c h n itt, c - U l-S ch n itt


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    PDF

    MKC2

    Abstract: B1213
    Text: B143-70/32 BblCOKOBOJlbTHblÑ MMmMbCHblf KEHOTPOH PULSE RECTIFIER TUBE BblCOKOBOJIbTHblÜ HMnyjIbCHblM KeHOTpOH BM3-70/32 n p e flH a 3 HaHeH flr m p a ó o T b i b « a n e c T B e K J in n n n p y io ii e ro , 3 a p flflH o ro , 3 aLi|i/iT H oro i/i B b in p a M M T e /ib H o ro


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    PDF B143-70/32 BM3-70/32 B03flywH0e MKC2 B1213

    IN 3307B

    Abstract: No abstract text available
    Text: Zener Regulator Diodes Mic/gsggv ! M ic ro s e m i | P a c k a g e D iv is io n JA N T X 1 N 4 5 5 5 B 1N 2804A 1N 2804B 1N 3305A 1N 3305B JA N 1 N 2 8 0 4 B JA N 1 N 3 3 0 5 B JA N T X 1 N 2 8 0 4 B J A N T X V1N 2804B JA N T X V 1 N 3 3 0 5 B 1N 4556A 1N 4556B


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    PDF 2804B 3305B 4556B 4564B 2805B 1N3306A 1N3306B 3306B IN 3307B

    LE50

    Abstract: 2SB1370 2SB1565 2SB1655 B303
    Text: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor 60V, —3A 2S B 1370 • A b s o l u t e m a x im u m r a tin g s •F e a tu re s 1 ) Low saturation voltage, typically VcE(sat) = — 0 . 3 V at le / Ib = —2A / - 0 .2 A . 2 ) Excellent DC curre nt gain characteristics.


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    PDF 2SB1370 2SB1655/2SB1565 2SB1370 O-220FN 2SB1655 2SB1565 94L-456-B349) LE50 2SB1565 B303

    pt100 LAPP

    Abstract: IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751
    Text: B U R R -B R O W N I XTR105 1 www. bu rr-b rown.com/d ata boo k/XTR105. htm I 4-20mA CURRENT TRANSMITTER with Sensor Excitation and Linearization FEATURES APPLICATIONS • LOW UNADJUSTED ERROR • INDUSTRIAL PROCESS CONTROL • TWO PRECISION CURRENT SOURCES


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    PDF XTR105 k/XTR105. 4-20mA 30nAp-p 110dBmin 14-PIN SO-14 Pt100 pt100 LAPP IRE 9530 transistor BU 210 pt100 burr brown PT100 ICE 751